Sensing techniques using a charge transfer device
Techniques are provided for sensing a signal associated with a memory cell capable of storing three or more logic states. To sense the memory cell (e.g., a signal associated with the memory cell), a charge may be transferred between a digit line and a node coupled with a plurality of sense components using a charge transfer device. Once the charge is transferred, at least some if not each of the plurality of sense components may sense the charge using one of a variety of sensing schemes. For example, the charge may be sensed by each sense component at a same time using a single fixed reference value, or at different times using different fixed reference values. Based on the charge being transferred or transferred with the node (e.g., using the charge transfer device) and each sense component sensing the charge, a logic state associated with the memory cell may be determined.
1. A method, comprising:
transferring, using a first transistor, a charge between a digit line and a node coupled with a first sense component and a second sense component based at least in part on a first voltage on the digit line being less than a second voltage on a gate of the first transistor;
sensing, by the first sense component, a signal on the node at a first time based at least in part on transferring the charge between the digit line and the node and activating a second transistor coupled between the node and the first sense component;
sensing, by the second sense component, the signal on the node at a second time different than the first time based at least in part on transferring the charge between the digit line and the node and activating a third transistor coupled between the node and the second sense component; and
determining a logic state of a multi-level memory cell based at least in part on sensing the signal by the first sense component and sensing the signal by the second sense component.
2. The method of claim 1 , wherein:
sensing the signal at the first sense component comprises comparing the signal on the node to a fixed reference value at the first time; and
sensing the signal at the second sense component comprises comparing the signal on the node to the fixed reference value at the second time.
3. The method of claim 1 , further comprising:
sensing, using a third sense component coupled with the digit line using the first transistor, the signal on the node at a third time different than the second time based at least in part on transferring the charge between the digit line and the node, wherein determining the logic state of the multi-level memory cell is based at least in part on sensing the signal using the third sense component.
4. The method of claim 1 , further comprising:
deactivating a fourth transistor coupled with the node and the first sense component after sensing the signal on the node at the first time, wherein deactivating the fourth transistor isolates the first sense component from the second sense component during at least a portion of a read operation.
5. The method of claim 1 , further comprising:
biasing the gate of the first transistor to the second voltage before transferring the charge between the digit line and the node;
discharging the multi-level memory cell onto the digit line based at least in part on biasing the gate of the first transistor; and
biasing the digit line to the first voltage based at least in part on discharging the multi-level memory cell onto the digit line.
6. The method of claim 5 , wherein biasing the gate of the first transistor to the second voltage comprises:
charging the node coupled with the first sense component, the second sense component, and the first transistor to a third voltage by activating a fourth transistor coupled with the node; and
discharging the node onto the gate of the first transistor while the first transistor is coupled with the digit line by activating a fifth transistor coupled with the node and the gate of the first transistor.
7. The method of claim 5 , further comprising:
isolating the digit line from the first transistor after biasing the gate of the first transistor to the second voltage by activating a fourth transistor coupled between the node and the digit line.
8. The method of claim 7 , further comprising:
coupling the digit line with the first transistor after discharging the multi-level memory cell onto the digit line.
9. The method of claim 1 , further comprising:
applying a third voltage from a voltage source to a second node of the first transistor while the second node of the first transistor is isolated from the digit line by activating a fourth transistor coupled between the voltage source and the second node, wherein the second node is isolated from the digit line by activating a fifth transistor coupled between the second node and the digit line; and
biasing the gate of the first transistor to the second voltage based at least in part on applying the third voltage.
10. The method of claim 9 , further comprising:
discharging the multi-level memory cell to the digit line concurrent with biasing the gate of the first transistor;
biasing the digit line to the first voltage based at least in part on discharging the multi-level memory cell onto the digit line; and
coupling the digit line with the first transistor after discharging the multi-level memory cell to the digit line.
11. The method of claim 1 , wherein the first transistor is configured to transfer the charge between the digit line and the node of the first sense component and the second sense component during a read operation.
12. An apparatus, comprising:
a multi-level memory cell coupled with a digit line;
a first sense component coupled with a node;
a second sense component coupled with the node;
a first transistor coupled with the node;
a second transistor coupled with a gate of the first transistor and the node of the first sense component and the second sense component;
a controller coupled with the multi-level memory cell, the controller operable to;
transfer, using the first transistor, a charge between the digit line and the node;
sense, by the first sense component, a signal on the node at a first time based at least in part on transferring the charge between the digit line and the node and activating a third transistor coupled between the node and the first sense component;
sense, by the second sense component, the signal on the node at a second time different than the first time based at least in part on transferring the charge between the digit line and the node and activating a fourth transistor coupled between the node and the second sense component; and
determine a logic state of the multi-level memory cell based at least in part on sensing the signal by the first sense component and sensing the signal by the second sense component.
13. The apparatus of claim 12 , further comprising:
a third sense component coupled with the node, wherein the controller is operable to; and
sense, by the third sense component, the signal on the node at a third time different than the second time based at least in part on transferring the charge between the digit line and the node and activating a fifth transistor coupled between the node and the third sense component.
14. The apparatus of claim 12 , further comprising:
a fifth transistor coupled with the node and the second sense component, wherein the controller is operable to; and
activate the fifth transistor before sensing the signal by the second sense component.
15. The apparatus of claim 12 , wherein the first sense component and the second sense component are configured to compare the signal on the node with a single fixed reference value.