Method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid

1. A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising:

performing a first gallium nitride epitaxial reaction and then a second gallium nitride epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1;

growing a first indium gallium nitride layer on an end face of the gallium nitride pyramid, wherein the end face is away from the substrate; and

growing a first gallium nitride layer on the first indium gallium nitride layer.

2. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1 , wherein the substrate is a LiAlO 2 substrate, a LiGaO 2 substrate or a ZnO substrate.

3. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1 , wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer.

4. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1 , wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630° C., wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1.

5. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 4 , wherein the first gallium nitride epitaxial reaction is performed for 35 minutes.

6. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 4 , wherein the second gallium nitride epitaxial reaction is performed for 70 minutes.

7. A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid comprising:

forming a gallium nitride pyramid on a substrate, by sequentially performing a first gallium nitride epitaxial reaction and a second gallium nitride epitaxial reaction on a substrate under 600-650° C., wherein the gallium nitride pyramid has an end face away from the substrate, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1;

growing a first indium gallium nitride layer on the end face of the gallium nitride pyramid, by performing a indium gallium nitride epitaxial reaction under 780° C. for 1.5 minutes with a flux ratio of indium to gallium to nitrogen being 1.55:1:165.09;

forming a gallium nitride cap layer on the indium gallium nitride layer, by performing a third gallium nitride epitaxial reaction under 780° C. for 30 seconds with a flux ratio of nitrogen to gallium being 165.09:1; and

forming a gallium nitride barrier layer on the gallium nitride cap layer, by performing a fourth gallium nitride epitaxial reaction under 780° C. for 10 minutes with a flux ratio of nitrogen to gallium being 70.39:1.

8. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7 , wherein an indium wetting layer is formed on the end face, and wherein the first indium gallium nitride layer is grown on the indium wetting layer.

9. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7 , further comprising growing a second indium gallium nitride layer on the first gallium nitride layer after the first gallium nitride layer is grown, growing a second gallium nitride layer on the second indium gallium nitride layer, growing a third indium gallium nitride layer on the second gallium nitride layer, and growing a third gallium nitride layer on the third indium gallium nitride layer.

10. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7 , wherein the substrate is a LiAlO 2 substrate, a LiGaO 2 substrate or a ZnO substrate.

11. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7 , wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer.

12. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7 , wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630° C., wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1.

13. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 12 , wherein the first gallium nitride epitaxial reaction is performed for 35 minutes.

14. The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 12 , wherein the second gallium nitride epitaxial reaction is performed for 70 minutes.