Write techniques for a memory device with a charge transfer device
Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense component, a digit line may be isolated from the first sense component and the second sense component. The high-level state may be stored in the memory cell, then a second state may be stored in the memory cell, in which the second state may be a mid-level state or a low-level state. The second state may be stored based on a write-back component identifying that the second state was stored in the memory cell before the write back procedure.
1. A method, comprising:
sensing, by a first sense component and a second sense component, a state of a memory cell that is configured to store at least a high-level state, a mid-level state, and a low-level state;
isolating the first sense component and the second sense component from a digit line based at least in part on sensing the state of the memory cell;
storing the high-level state to the memory cell based at least in part on the first sense component and the second sense component being isolated from the digit line; and
coupling the digit line with a write-back component associated with the first sense component and the second sense component after storing the high-level state to the memory cell, the write-back component configured to store the mid-level state or the low-level state to the memory cell.
2. The method of claim 1 , further comprising:
storing the mid-level state or the low-level state to the memory cell after storing the high-level state to the memory cell.
3. The method of claim 1 , further comprising:
coupling, by a first transistor, the digit line with a voltage source after isolating the first sense component and the second sense component from the digit line, wherein storing the high-level state to the memory cell is based at least in part on coupling the digit line with the voltage source.
4. The method of claim 3 , further comprising:
isolating, by the first transistor, the voltage source from the digit line before coupling the digit line with the first sense component and the second sense component and after coupling the digit line with the voltage source by the first transistor.
5. The method of claim 1 , further comprising:
activating a word line to select the memory cell before sensing the state of the memory cell.
6. An apparatus, comprising:
a memory cell coupled with a digit line;
a first sense component coupled with a node;
a second sense component coupled with the node;
a first transistor coupled with the node and configured to isolate charge between the digit line and both the first sense component and the second sense component;
a second transistor coupled with the digit line and configured to write a high-level state to the memory cell;
a write-back component coupled with the first sense component and the second sense component, the write-back component configured to store a mid-level state or a low-level state to the memory cell; and
a controller coupled with the memory cell, the controller operable to:
sense, by the first sense component and the second sense component, a state of the memory cell that is configured to store at least three states;
isolate, by the first transistor, the first sense component and the second sense component from the digit line based at least in part on sensing the state of the memory cell;
store, by the second transistor, the high-level state to the memory cell based at least in part on isolating the first sense component and the second sense component from the digit line; and
couple the write-back component with the digit line after storing the high-level state to the memory cell.
7. The apparatus of claim 6 , wherein the controller is further operable to:
couple, by the first transistor, the first sense component and the second sense component with the digit line based at least in part on storing the high-level state to the memory cell.
8. The apparatus of claim 7 , wherein the controller is further operable to:
store, by the write-back component, the mid-level state or the low-level state to the memory cell based at least in part on coupling the digit line with the first sense component and the second sense component.
9. The apparatus of claim 6 , wherein the controller is further operable to:
store the high-level state to the memory cell, by the second transistor, by allowing the charge to flow through the second transistor based at least in part on isolating the first sense component and the second sense component from the digit line.