Package on package structure and method for forming the same
Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.
1. A semiconductor device comprising a solder ball, the solder ball comprising:
a copper ball;
a layer of solder over an outer surface of the copper ball; and
an intermediate layer separating the copper ball and the layer of solder, wherein the intermediate layer has a first annular thickness on a first portion of the copper ball and has a second annular thickness on a second portion of the copper ball, the second annular thickness being greater than the first annular thickness.
2. The semiconductor device of claim 1 , further comprising:
a semiconductor substrate; and
a contact pad over the semiconductor substrate, wherein the copper ball is disposed over the contact pad.
3. The semiconductor device of claim 2 , further comprising: a bonding layer coupling the copper ball to the contact pad.
4. The semiconductor device of claim 1 , wherein the layer of solder has different annular thicknesses at different locations over the outer surface of the copper ball.
5. The semiconductor device of claim 1 , wherein the intermediate layer comprises a transition metal.
6. The semiconductor device of claim 1 , wherein a width or diameter of the copper ball is about 200 μm.
7. The semiconductor device of claim 1 , wherein the layer of solder has a thickness in a range from 0.5 μm to about 10 μm.
8. The semiconductor device of claim 1 , wherein the first annular thickness of the intermediate layer ranges from about 0.5 μm to about 10 μm.
9. The semiconductor device of claim 1 , wherein the intermediate layer comprises nickel and has an annular thickness for at least some portions thereof ranging between 0.5 μm to about 10 μm.
10. A semiconductor device comprising a solder ball, comprising:
a conductive pad;
a copper ball disposed over an upper surface of the conductive pad;
a layer of solder over an outer surface of the copper ball, the layer of solder having an inner surface and an outer surface which are generally concentric with the outer surface of the copper ball; and
an intermediate layer comprising nickel separating the copper ball and the layer of solder, wherein the intermediate layer has different annular thicknesses at different locations of the intermediate layer.
11. The semiconductor device of claim 10 , wherein the copper ball, intermediate layer, and solder layer each have a center region that lies along a common axis which extends perpendicularly though an upper surface of the conductive pad.
12. The semiconductor device of claim 10 , further comprising: a bonding layer comprising solder coupling the copper ball to the conductive pad.
13. The semiconductor device of claim 10 , wherein a width or diameter of the copper ball is in a range from about 100 μm to about 200 μm.
14. The semiconductor device of claim 13 , wherein the layer of solder has a thickness in a range from 0.5 μm to about 10 μm.
15. A semiconductor device comprising a solder ball, comprising:
a conductive pad;
a copper core disposed over the conductive pad;
a layer of solder over an outer surface of the copper core, wherein the layer of solder has different annular thicknesses at different locations over the outer surface of the copper core; and
an intermediate layer separating the copper core and the layer of solder; and
wherein the intermediate layer has a first annular thickness over an upper portion of the copper core and has a second annular thickness below a lower portion of the copper core, the second annular thickness being less than the first annular thickness.
16. The semiconductor device of claim 15 , wherein the copper core, the intermediate layer, and the layer of solder each have a center region that lies along a common axis.
17. The semiconductor device of claim 15 , wherein the first annular thickness of the intermediate layer ranges from about 0.5 μm to about 10 μm.
18. The semiconductor device of claim 17 , wherein a width or diameter of the copper core is about 200 μm.