Electronic circuit and data storage system
A method of manufacturing an electronic circuit comprises: providing an electronic circuit having a first configuration in which the circuit comprises a resistive element having a first resistance, and irradiating at least a part of the resistive element with electromagnetic radiation to change the resistance of the resistive element from the first resistance to a second resistance, the second resistance being lower than the first resistance. A method of storing data comprises: receiving a piece of data to be stored; determining a number according to the data; and irradiating at least part of a resistive element with that number of pulses of electromagnetic radiation to change a resistance of the resistive element from a first resistance to a second resistance, the second resistance being lower than the first resistance. A difference between the first resistance and the second resistance is dependent on the number. Corresponding circuits and data storage systems are disclosed.
1. A method of manufacturing an electronic circuit, the method comprising:
providing an electronic circuit having a first configuration in which the circuit comprises an electrically resistive element having a first resistance; and
irradiating at least a part of said electrically resistive element with electromagnetic radiation to change the resistance of said electrically resistive element from said first resistance to a second resistance, wherein said second resistance is lower than said first resistance
wherein the electrically resistive element comprises semiconductive material, and said irradiating is arranged to increase a conductivity of the semiconductive material such that the resistance of the electrically resistive element changes from said first resistance to said second resistance.
2. A method in accordance with claim 1 , wherein the electronic circuit comprises electrically insulative material covering at least one side of the electrically resistive element, and said irradiating comprises irradiating said part with electromagnetic radiation through the electrically insulative material.
3. A method in accordance with claim 2 , wherein the electrically insulative material is at least substantially transparent to visible light.
4. A method in accordance with claim 1 , wherein the semiconductive material is at least substantially transparent to visible light.
5. A method in accordance with claim 1 , wherein the circuit comprises a layer of dielectric material covering said semiconductive material.
6. A method in accordance with claim 5 , wherein the dielectric material is substantially transparent to visible light, and the step of irradiating comprises irradiating through the layer of dielectric material.
7. A method in accordance with claim 1 , wherein the electrically resistive element is encased in material at least substantially transparent to visible light, and said irradiating comprises irradiating through said material at least substantially transparent to visible light.
8. A method in accordance with claim 1 , wherein said irradiating comprises providing said electromagnetic radiation from a laser or a lamp.
9. A method in accordance with claim 1 , wherein said irradiating comprises irradiating with at least one pulse of said electromagnetic radiation.
10. A method in accordance with claim 9 , further comprising selecting the number of said pulses to determine the magnitude of the difference between said first resistance and said second resistance.
11. A method in accordance with claim 10 , further comprising receiving a piece of data, and selecting said number in accordance with the piece of data, such that the difference between said first and second resistances is indicative of said piece of data.
12. A method in accordance with claim 8 , further comprising controlling the dose of electromagnetic radiation supplied to the electrically resistive element from the lamp or laser to determine the magnitude of the difference between said first resistance and said second resistance.
13. A method in accordance with claim 12 , further comprising receiving a piece of data and arranging said dose in accordance with the piece of data, such that the difference between said first and second resistances is indicative of said piece of data.
14. A method in accordance with claim 12 , wherein the lamp or the laser provides a beam of said electromagnetic radiation and said controlling comprises controlling at least one of a distance of the electrically resistive element from the lamp or laser and a length of time the electrically resistive element is exposed to said beam.
15. A method in accordance with claim 14 , wherein said controlling comprises controlling a speed at which the electrically resistive element is moved through the beam.
16. A method in accordance with claim 1 , further comprising heating the electrically resistive element to a temperature of at least 100 C and beginning said irradiating while the electrically resistive element is at said temperature.
17. A method in accordance with claim 1 , wherein the circuit is arranged to provide an output dependent on the magnitude of the difference between said first resistance and said second resistance.
18. A method in accordance with claim 1 , wherein the circuit further comprises a display element coupled to the electrically resistive element and said irradiating is arranged to determine a state of the display element during an operation of the circuit.
19. A method in accordance claim 1 , wherein the circuit comprises a plurality of said electrically resistive elements, each electrically resistive element comprising at least a portion of a common or respective layer of semiconductive material, and said irradiating comprises irradiating at least a part of each portion with a selected amount of said electromagnetic radiation.
20. A method in accordance with claim 19 , wherein the electronic circuit is arranged to provide an output dependent on the change in resistance of each electrically resistive element resulting from said irradiating.
21. A method in accordance with claim 1 , wherein said circuit is a memory circuit, the second resistance or the difference between the first resistance and the second resistance corresponding to a stored parameter or value.
22. A method of manufacturing an electronic circuit, the method comprising:
providing an electronic circuit having a first configuration in which the circuit comprises an electrically resistive element having a first resistance; and
irradiating at least a part of said electrically resistive element with electromagnetic radiation to change the resistance of said electrically resistive element from said first resistance to a second resistance, wherein said second resistance is lower than said first resistance,
wherein the electrically resistive element comprises at least a portion of a layer of semiconductive material having a first conductivity, and said irradiating comprises irradiating at least a part of said portion with said electromagnetic radiation to increase the conductivity of said part of said portion such that the resistance of the electrically resistive element changes from said first resistance to said second resistance.