Semiconductor device with partial EMI shielding removal using laser ablation

1. A method of making a semiconductor device, comprising:

providing a substrate;

disposing a first component and second component over the substrate, wherein the first component includes an antenna;

disposing a lid over the substrate between the first component and second component;

depositing an encapsulant over the substrate and lid;

forming a conductive layer over the encapsulant and in contact with the lid;

removing a first portion of the conductive layer over a first surface of the first component using laser ablation

rotating the semiconductor device after removing the first portion of the conductive layer; and

removing a second portion of the conductive layer over a second surface of the encapsulant after rotating the semiconductor device.

2. The method of claim 1 , further including removing the first portion of the conductive layer over a first portion of the encapsulant by metal peeling.

3. The method of claim 2 , further including performing a soft laser ablation over the first portion of the encapsulant after metal peeling.

4. The method of claim 1 , further including:

removing the first portion of the conductive layer using a first laser; and

removing a second portion of the conductive layer using a second laser.

5. The method of claim 4 , further including:

removing the first portion of the conductive layer from a first surface of the encapsulant using a first laser beam oriented perpendicular to the first surface of the encapsulant; and

removing a second portion of the conductive layer from a second surface of the encapsulant using a second laser beam oriented parallel to the second surface of the encapsulant and perpendicular to the first surface of the encapsulant.

6. A method of making a semiconductor device, comprising:

providing a substrate;

disposing a lid over the substrate;

depositing an encapsulant over the substrate and lid;

forming a conductive layer over the encapsulant and coupled to the lid; and

removing a first portion of the conductive layer using laser ablation and metal peeling.

7. The method of claim 6 , further including removing a second portion of the conductive layer using a mask.

8. The method of claim 6 , further including removing a second portion of the conductive layer that is discontinuous with the first portion of the conductive layer.

9. The method of claim 6 , further including removing the first portion of the conductive layer over an antenna embedded in the encapsulant.

10. The method of claim 6 , further including:

rotating the semiconductor device after removing the first portion of the conductive layer; and

removing a second portion of the conductive layer using laser ablation after rotating the semiconductor device.

11. The method of claim 6 , further including performing laser ablation with a laser beam oriented in parallel with the conductive layer.

12. A method of making a semiconductor device, comprising:

providing a substrate;

depositing an encapsulant over the substrate;

forming a conductive layer over the encapsulant;

removing a first portion of the conductive layer using a first laser ablation process; and

removing a second portion of the conductive layer using a second laser ablation process.

13. The method of claim 12 , wherein the first portion of the conductive layer is formed over a first surface of the encapsulant and the second portion of the conductive layer is formed over a second surface of the encapsulant perpendicular to the first surface.

14. The method of claim 12 , further including:

disposing a lid over the substrate;

depositing the encapsulant over the lid; and

forming the conductive layer in contact with the lid.

15. The method of claim 12 , wherein the first laser ablation process includes:

peeling the first portion of the conductive layer; and

ablating the first portion of the conductive layer with a reduced power.

16. The method of claim 12 , further including removing the second portion of the conductive layer simultaneously with the first portion of the conductive layer.

17. A method of making a semiconductor device, comprising:

providing a semiconductor package;

forming a shielding layer over the semiconductor package;

removing a first portion of the shielding layer using a first laser; and

removing a second portion of the shielding layer using a second laser.

18. The method of claim 17 , further including removing the second portion of the shielding layer over a second surface of the semiconductor package, wherein the first portion of the shielding layer is disposed over a first surface of the semiconductor package.

19. The method of claim 17 , further including removing the second portion of the shielding layer simultaneously with the first portion of the shielding layer.

20. The method of claim 17 , further including removing the first portion of the shielding layer over an antenna in the semiconductor package.

21. The method of claim 17 , further including forming the shielding layer in contact with a lid of the semiconductor package.