Silicon doping for laser splash blockage
Semiconductor devices having silicon doping for laser splash protection, along with associated methods and systems, are disclosed herein. In one embodiment, a semiconductor device includes a silicon layer and a circuitry layer with a plurality of semiconductor devices. A doped silicon region is formed on a front side of the silicon layer upon which the circuitry layer is deposited. The doped silicon region is positioned under the circuitry layer. The doped silicon region has a dopant concentration of at least 10 15 cm −3 .
1. A method of dicing a silicon substrate, the method comprising:
applying a mask to a front side of the silicon substrate, wherein the mask includes one or more openings exposing one or more regions to be doped;
introducing dopant atoms at the one or more regions;
diffusing the dopant atoms into the one or more regions using a rapid thermal procession until the one or more regions have a dopant concentration of at least 10 15 cm −3 ;
forming an active layer of circuitry at the front side of the substrate;
stealth dicing the substrate from a back surface thereof using laser irradiation to cleave one or more portions of a silicon lattice of the substrate, the one or more portions being vertically aligned with the one or more regions; and
back-grinding the back surface of the substrate to mechanically separate adjacent semiconductor dice from the substrate on opposing sides of the one or cleaved more portions of the silicon lattice of the substrate,
wherein the dopant concentration of the one or more regions is configured to absorb a laser splash from the stealth dicing or to reflect the laser splash away from the active layer of circuitry.
2. The method of claim 1 , wherein the mask aligns with scribe lines between a plurality of semiconductor devices of a circuitry layer.
3. The method of claim 1 , wherein the mask aligns with a plurality of semiconductor devices of a circuitry layer.
4. The method of claim 1 , wherein the mask is only applied to a surrounding border adjacent to a plurality of scribe lines.
5. The method of claim 1 , wherein the dopant concentration comprises boron impurities.
6. The method of claim 1 , wherein the dopant concentration comprises phosphorous impurities.
7. The method of claim 1 , wherein the dopant concentration is based on a desired index of refraction for the doped silicon region.
8. The method of claim 1 , wherein the dopant concentration is based on a desired light transmissivity for the doped silicon region.
9. The method of claim 1 , wherein the dopant concentration is based on an ability of the doped silicon region absorb a laser splash containing a wavelength of about 1000-1342 nm.