Adjustable NAND write performance
Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.
1. A memory device for adjustable NAND write performance, the memory device comprising:
an interface to receive an accelerated write request from a controller of the memory device, the accelerated write request being a write request that is designated as accelerated by at least one of:
an explicit indication by a requestor of the accelerated write request; or
the memory device being in a high-speed mode of operation; and
processing circuitry to:
identify that a target block for external writes is opened as a multi-level cell block, an external write is any write that does not originate from the memory device, the target block being a memory block in a memory array and a current external write cursor for the external writes; and
write data for the accelerated write request to the target block using a single-level cell encoding.
2. The memory device of claim 1 , wherein only the target block is open for external writes.
3. The memory device of claim 1 , wherein the single-level cell encoding has charge distributions based on charge distributions for a type of multi-level cell encoding for the target block.
4. The memory device of claim 3 , wherein the type of multi-level cell encoding is a triple-level cell (TLC) encoding or greater.
5. The memory device of claim 3 , wherein the single-level cell encoding has charge distributions for an upper page and a lower page distinguished by an unmodified read voltage trim of the type of multi-level cell encoding.
6. The memory device of claim 5 , wherein the unmodified read voltage is at least one of a lower page read voltage or an extra page read voltage.
7. The memory device of claim 5 , wherein the memory device is configured to not track whether elements written to the target block are in the single-level encoding or the multi-level cell encoding for read voltage purposes.
8. The memory device of claim 3 , wherein the single-level cell encoding has charge distributions for an upper page and a lower page distinguished by a read voltage trim of a single-level cell type of cell encoding that is different than any read voltage trim of the type of multi-level cell encoding.
9. A method for adjustable NAND write performance, the method comprising:
receiving, at a memory device, an accelerated write request from a controller of the memory device, the accelerated write request being a write request that is designated as accelerated by at least one of:
an explicit indication by a requestor of the accelerated write request: or
the memory device being in a high-speed mode of operation;
identifying, at the memory device, that a target block for external writes is opened as a multi-level cell block, an external write is any write that does not originate from the memory device, the target block being a memory block in a memory array and a current external write cursor for the external writes; and
writing, by the memory device, data for the accelerated write request to the target block using a single-level cell encoding.
10. The method of claim 9 , wherein the target block is alone in being open for external writes.
11. The method of claim 9 , wherein the single-level cell encoding uses charge distributions based on charge distributions for a type of multi-level cell encoding for the target block.
12. The method of claim 11 , wherein the type of multi-level cell encoding is a triple-level cell (TLC) encoding or greater.
13. The method of claim 11 , wherein the single-level cell encoding uses charge distributions for an upper page and a lower page distinguished by an unmodified read voltage trim of the type of multi-level cell encoding.
14. The method of claim 13 , wherein the unmodified read voltage is at least one of a lower page read voltage or an extra page read voltage.
15. The method of claim 13 , wherein the memory device does not track whether elements written to the target block are in the single-level encoding or the multi-level cell encoding for read voltage purposes.
16. The method of claim 11 , wherein the single-level cell encoding uses charge distributions for an upper page and a lower page distinguished by a read voltage trim of a single-level cell type of cell encoding that is different than any read voltage trim of the type of multi-level cell encoding.
17. A non-transitory machine readable medium including instructions for adjustable NAND write performance, the instructions, when executed by processing circuitry, cause the processing circuitry to perform operations comprising:
receiving, at a memory device, an accelerated write request from a controller of the memory device, the accelerated write request being a write request that is designated as accelerated by at least one of:
an explicit indication by a requestor of the accelerated write request; or
the memory device being in a high-speed mode of operation;
identifying, at the memory device, that a target block for external writes is opened as a multi-level cell block, an external write is any write that does not originate from the memory device, the target block being a memory block in a memory array and a current external write cursor for the external writes; and
writing, by the memory device, data for the accelerated write request to the target block using a single-level cell encoding.
18. The machine readable medium of claim 17 , wherein the target block is alone in being open for external writes.
19. The non-transitory machine readable medium of claim 17 , wherein the single-level cell encoding uses charge distributions based on charge distributions for a type of multi-level cell encoding for the target block.
20. The non-transitory machine readable medium of claim 19 , wherein the type of multi-level cell encoding is a triple-level cell (TLC) encoding or greater.
21. The non-transitory machine readable medium of claim 19 , wherein the single-level cell encoding uses charge distributions for an upper page and a lower page distinguished by an unmodified read voltage trim of the type of multi-level cell encoding.
22. The non-transitory machine readable medium of claim 21 , wherein the unmodified read voltage is at least one of a lower page read voltage or an extra page read voltage.
23. The non-transitory machine readable medium of claim 21 , wherein the memory device does not track whether elements written to the target block are in the single-level encoding or the multi-level cell encoding for read voltage purposes.
24. The non-transitory machine readable medium of claim 19 , wherein the single-level cell encoding uses charge distributions for an upper page and a lower page distinguished by a read voltage trim of a single-level cell type of cell encoding that is different than any read voltage trim of the type of multi-level cell encoding.