IP Library Granted Patent US 10,811,298
Granted Patent B2
US 10,811,298 · App. 16/237,220 · Granted Oct 20, 2020

Patterned carrier wafers and methods of making and using the same

Inventor: Jing Cheng Lin (Taichung, TW)
Assignee: Micron Technology, Inc.
H01L21/6836H01L21/0337H01L22/30H01L23/544H01L2223/54426
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Quick Facts
Patent No.
US 10,811,298
App. No.
16/237,220
Granted
Oct 20, 2020
Kind
B2
Abstract

An apparatus is provided, comprising: a wafer having a first planar surface and a second surface opposite the first surface. The second surface includes a plurality of recesses. Each recess includes a plurality of sidewalls and a lower surface and is configured to receive a semiconductor device. The plurality of sidewalls of each recess is configured to align the semiconductor device and constrain the semiconductor device from moving in a direction parallel to the second surface.

Claims (33)

1. A semiconductor device testing apparatus, comprising:

a wafer having a first planar surface and a second surface opposite the first surface; wherein the second surface includes a plurality of recesses, each recess including a plurality of sidewalls and a lower surface, each recess configured to receive a semiconductor device, the plurality of sidewalls of each recess configured to align the semiconductor device and constrain the semiconductor device from moving in a direction parallel to the second surface during a probe operation; and

a debondable adhesive disposed on the lower surface of each of the plurality of recesses, the plurality of sidewalls of each of the plurality of recesses being substantially free of the debondable adhesive, the debondable adhesive configured to temporarily adhere back sides of the corresponding semiconductor die to the lower surface during the probe operation.

2. The semiconductor device testing apparatus of claim 1 , wherein the debondable adhesive comprises a laser debondable adhesive.

3. The semiconductor device testing apparatus of claim 1 , wherein the wafer is a glass wafer.

4. The semiconductor device testing apparatus of claim 1 , wherein the wafer is a silicon wafer.

5. The semiconductor device testing apparatus of claim 1 , wherein the wafer includes a patterned layer of dielectric material in which the recesses are formed.

6. The semiconductor device testing apparatus of claim 1 , wherein the recesses are formed in a bulk material of the wafer.

7. The semiconductor device testing apparatus of claim 1 , wherein the wafer includes one or more patterned alignment marks.

8. A method of testing a semiconductor device, comprising:

providing a patterned carrier wafer including a recess having a shape corresponding to the semiconductor device;

disposing a debondable adhesive on a lower surface of the recess, the recess having a plurality of sidewalls remaining substantially free of the debondable adhesive;

adhering a back side of the semiconductor device to the debondable adhesive in the recess;

performing a probe operation on a front side of the semiconductor device.

9. The method of claim 8 , further comprising:

curing the debondable adhesive after disposing the semiconductor device in the recess.

10. The method of claim 8 , further comprising:

debonding the debondable adhesive after performing the probe operation on the semiconductor device.

11. The method of claim 8 , wherein the debondable adhesive comprises a laser debondable adhesive.

12. The method of claim 8 , wherein the patterned carrier wafer is a glass wafer.

13. The method of claim 8 , wherein the patterned carrier wafer is a silicon wafer.

14. The method of claim 8 , wherein the patterned carrier wafer includes a layer of dielectric material in which the recesses are formed.

15. The method of claim 8 , wherein the recesses are formed in a bulk material of the patterned carrier wafer.

16. The method of claim 8 , wherein the patterned carrier wafer includes one or more alignment marks.

17. The method of claim 16 , further comprising:

aligning the semiconductor device with the recess based on the one or more alignment marks before disposing the semiconductor device in the recess.

18. A method of forming a patterned semiconductor carrier wafer, comprising:

providing a wafer;

forming a mask layer over the wafer;

patterning the mask layer to form a plurality of recesses, each having a plurality of sidewalls and a lower surface; and

disposing a debondable adhesive on the lower surface of each of the plurality of recesses, the plurality of sidewalls of each recess remaining substantially free of the debondable adhesive,

wherein each recess is configured to receive a back side of a semiconductor device, and

wherein the plurality of sidewalls of each recess is configured to align the semiconductor device and constrain the semiconductor device from moving in a direction parallel to the second surface during a probe operation performed on a front side of the corresponding semiconductor device.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 15, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 051041/0317 →
RELEASE OF SECURITY INTEREST Recorded Oct 14, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050724/0392 →
SUPPLEMENT NO. 12 TO PATENT SECURITY AGREEMENT Recorded Apr 19, 2019
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 048948/0677 →
SUPPLEMENT NO. 3 TO PATENT SECURITY AGREEMENT Recorded Apr 19, 2019
From: MICRON TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 048951/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2019
From: LIN, JING CHENG
To: MICRON TECHNOLOGY, INC.
Reel/Frame 048633/0527 →