Non-volatile resistive-switching memory containing halide perovskite material and method for fabricating the same
Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A′) 2 A n−1 B n X 3n+1 , wherein A′ is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion, the A′ has an asymmetric ion distribution which may be rotated by an applied electric field, and n is a value between 1 and ∞.
1. A resistive-switching memory comprising:
a substrate selected from the group consisting of silicon, metal foil, glass, and polymer film;
a lower electrode comprising a graphene layer and disposed on the substrate;
a resistive switching layer disposed directly on the lower electrode, where a resistance of the resistive switching layer is switched by an applied voltage; and
an upper electrode disposed directly on the resistive switching layer,
wherein the resistive switching layer comprises a compound of a chemical formula (A′) 2 An n−1 Pb n X 3n+1 ,
wherein
A′ is an ammonium ion having an asymmetric structure and comprising a phenyl group, A is a monovalent metal ion, and X is a halogen ion,
A′ has an asymmetric ion distribution which may be rotated by an applied electric field, and
n is 4.
2. The resistive-switching memory according to claim 1 , wherein A is a cesium and A′ is phenylethylammonium (PEA).
3. The resistive-switching memory according to claim 1 , wherein the resistive switching layer comprises a compound PEA 2 Cs 3 Pb 4 I 13 .
4. The resistive-switching memory according to claim 1 , further comprising a buffer layer disposed on the substrate, wherein the buffer layer comprises a silicon oxide film or a silicon nitride film.
5. The resistive-switching memory according to claim 1 , wherein the polymer film is selected from the group consisting of hard-coated polyethylene terephthalate (PET) film, polyimide film, and cycloolefin polymer (COP) film.
6. A method for fabricating the resistive-switching memory of claim 1 comprising:
forming the lower electrode on the substrate;
forming the resistive switching layer on and in direct contact with the lower electrode; and
forming the upper electrode on and in direct contact with the resistive switching layer,
wherein the resistive switching layer has a layered structure.
7. The method for fabricating the resistive-switching memory according to claim 6 , wherein A is a cesium and A′ is phenylethylammonium (PEA).
8. The method for fabricating the resistive-switching memory according to claim 6 , wherein the resistive switching layer comprises a compound PEA 2 Cs 3 Pb 4 I 13 .