Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material

1. An integrated circuit structure, comprising:

a fin comprising silicon, the fin having a top and sidewalls, wherein the fin has a trench separating a first fin portion and a second fin portion;

a first gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of the first fin portion;

a second gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of the second fin portion; and

an isolation structure in the trench of the fin, the isolation structure between the first gate structure and the second gate structure, wherein the isolation structure comprises a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer.

2. The integrated circuit structure of claim 1 , wherein the oxidation catalyst layer comprises aluminum oxide.

3. The integrated circuit structure of claim 1 , wherein the oxidation catalyst layer comprises lanthanum oxide.

4. The integrated circuit structure of claim 1 , wherein the isolation structure further comprises a third dielectric material laterally surrounded by an upper portion of the first dielectric material, the third dielectric material on an upper surface of the oxidation catalyst layer.

5. The integrated circuit structure of claim 4 , wherein the third dielectric material is further on an upper surface of the second dielectric material.

6. The integrated circuit structure of claim 1 , wherein the oxidation catalyst layer has an upper surface co-planar with an upper surface of the second dielectric material.

7. The integrated circuit structure of claim 1 , wherein the oxidation catalyst layer has an upper surface above an upper surface of the second dielectric material.

8. An integrated circuit structure, comprising:

a fin comprising silicon, the fin having a top and sidewalls, wherein the top has a longest dimension along a direction;

a first isolation structure over a first end of the fin;

a gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of a region of the fin, wherein the gate structure is spaced apart from the first isolation structure along the direction; and

a second isolation structure over a second end of the fin, the second end opposite the first end, the second isolation structure spaced apart from the gate structure along the direction, wherein the first isolation structure and the second isolation structure both comprise a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer.

9. The integrated circuit structure of claim 8 , wherein the first isolation structure and the second isolation structure both further comprise a third dielectric material laterally surrounded by an upper portion of the first dielectric material, the third dielectric material on an upper surface of the oxidation catalyst layer.

10. The integrated circuit structure of claim 9 , wherein the third dielectric material is further on an upper surface of the second dielectric material.

11. The integrated circuit structure of claim 8 , wherein the oxidation catalyst layer has an upper surface co-planar with an upper surface of the second dielectric material.

12. The integrated circuit structure of claim 8 , wherein the oxidation catalyst layer has an upper surface above an upper surface of the second dielectric material.

13. The integrated circuit structure of claim 8 , wherein the first and second isolation structures induce a compressive stress on the fin.

14. The integrated circuit structure of claim 13 , wherein the gate electrode is a P-type gate electrode.

15. The integrated circuit structure of claim 8 , wherein the first isolation structure has a width along the direction, the gate structure has the width along the direction, and the second isolation structure has the width along the direction.

16. The integrated circuit structure of claim 15 , wherein a center of the gate structure is spaced apart from a center of the first isolation structure by a pitch along the direction, and a center of the second isolation structure is spaced apart from the center of the gate structure by the pitch along the direction.

17. The integrated circuit structure of claim 8 , wherein the first and second isolation structures are both in a corresponding trench in an inter-layer dielectric layer.

18. The integrated circuit structure of claim 8 , further comprising:

a first source or drain region between the gate structure and the first isolation structure; and

a second source or drain region between the gate structure and the second isolation structure.

19. The integrated circuit structure of claim 18 , wherein the first and second source or drain regions are embedded source or drain regions comprising silicon and germanium.

20. The integrated circuit structure of claim 8 , wherein the gate structure further comprises a high-k dielectric layer between the gate electrode and the fin and along sidewalls of the gate electrode.

21. The integrated circuit structure of claim 8 , wherein the oxidation catalyst layer comprises aluminum oxide or lanthanum oxide.