Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.
1. An optoelectronic semiconductor device with a mounting surface and a radiation exit surface opposite the mounting surface comprising
a semiconductor chip which is an optoelectronic semiconductor chip; and a package body comprising package body material; wherein
the package body surrounds the semiconductor chip in a lateral direction;
the semiconductor chip is free of the package body material at the radiation exit surface;
the semiconductor chip comprises a front and a back;
the front of the semiconductor chip faces away from the mounting surface; and
a side surface of the semiconductor chip is adjoined by a fillet, which is delimited in the lateral direction by the side surface of the semiconductor chip and the package body; wherein a dimension in the lateral direction of the fillet decreases along a direction from the front of the semiconductor chip toward the back of the semiconductor chip.
2. The optoelectronic semiconductor device according to claim 1 , wherein the fillet extends over the entire circumference of the semiconductor chip and tapers in the direction of the mounting surface.
3. The optoelectronic semiconductor device according to claim 1 , wherein the fillet contains a radiation conversion material.
4. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip is provided for generating and/or receiving radiation.
5. The optoelectronic semiconductor device according to claim 1 , wherein the fillet is radiation-transmissive.
6. The optoelectronic semiconductor device according to claim 1 , wherein the fillet has a reflectivity of at least 80%.
7. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip is free of package body material at the mounting surface of the optoelectronic semiconductor device.
8. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip comprises two lands for electrical contacting at a front side which faces away from the mounting surface.
9. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip has two lands for electrical contacting at a front side which faces away from the mounting surface wherein said two lands are electrically conductively connected to a first contact and a second contact on the mounting surface, respectively.
10. The optoelectronic semiconductor device according to claim 9 , wherein the lands are connected via vias through the package body.
11. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip has a land for electrical contacting at a front side and the semiconductor chip has a land for electrical contacting at a rear side, wherein the land at the front side is electrically conductively connected to a contact on the mounting surface via a via through the package body.
12. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip extends completely through the package body in a vertical direction which is perpendicular to the lateral direction.
13. The optoelectronic semiconductor device according to claim 1 , wherein the fillet is transmissive for the radiation to be detected or emitted by the semiconductor chip and an interface between the fillet and the package body has a reflectivity of at least 80%.
14. The optoelectronic semiconductor device according to claim 1 , wherein the fillet is transmissive for the radiation to be detected or emitted by the semiconductor chip and an interface between the fillet and the package body is convexly curved when seen from the radiation exit surface.