Display device and semiconductor device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
1. A display device comprising:
a first transistor;
a second transistor;
a first wiring, the first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring, the second wiring electrically connected to one of a source and a drain of the second transistor; and
an electroluminescent element, the electroluminescent element electrically connected to the other of the source and the drain of the first transistor,
wherein a channel formation region of the first transistor comprises a region capable of flowing a carrier in a first direction,
wherein a semiconductor layer comprising the channel formation region of the first transistor has a curved portion,
wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,
wherein the first wiring comprises a region overlapping with the semiconductor layer,
wherein a longitudinal direction of the first wiring intersects with the first direction,
wherein the second transistor is configured to transmit a signal of the second wiring to the first transistor,
wherein the second wiring comprises a region overlapping with the semiconductor layer,
wherein the channel formation region of the first transistor comprises crystalline silicon, and
wherein a channel formation region of the second transistor comprises crystalline silicon.
2. The display device according to claim 1 , wherein the curved portion is an U-shaped curved portion.
3. The display device according to claim 1 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.
4. The display device according to claim 1 , wherein a gate of the first transistor is capable of being one electrode of a capacitor.
5. The display device according to claim 4 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.
6. The display device according to claim 4 , wherein the first wiring is capable of being the other electrode of the capacitor.
7. The display device according to the claim 1 , wherein the first transistor has a multi-gate structure.
8. The display device according to claim 1 , wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor.
9. An electronic device comprising the display device according to claim 1 .
10. The display device according to claim 1 ,
wherein the first wiring is located between adjacent pixel electrodes,
wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and
wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.
11. The display device according to claim 1 , wherein a gate of the first transistor is directly connected to the other of the source and the drain of the second transistor in a circuit diagram.
12. A display device comprising:
a first transistor;
a second transistor;
a first wiring, the first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring, the second wiring electrically connected to one of a source and a drain of the second transistor; and
an electroluminescent element, the electroluminescent element electrically connected to the other of the source and the drain of the first transistor,
wherein a channel formation region of the first transistor comprises a region capable of flowing a carrier in a first direction,
wherein a semiconductor layer comprising the channel formation region of the first transistor has a curved portion,
wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,
wherein the first wiring comprises a region overlapping with the semiconductor layer,
wherein a longitudinal direction of the first wiring intersects with the first direction,
wherein the second transistor is configured to transmit a signal of the second wiring to the first transistor,
wherein the second wiring comprises a region overlapping with the semiconductor layer,
wherein a longitudinal direction of the second wiring intersects with the first direction,
wherein the channel formation region of the first transistor comprises crystalline silicon, and
wherein a channel formation region of the second transistor comprises crystalline silicon.
13. The display device according to claim 12 , wherein the curved portion is an U-shaped curved portion.
14. The display device according to claim 12 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.
15. The display device according to claim 12 , wherein a gate of the first transistor is capable of being one electrode of a capacitor.
16. The display device according to claim 15 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.
17. The display device according to claim 15 , wherein the first wiring is capable of being the other electrode of the capacitor.
18. The display device according to the claim 12 , wherein the first transistor has a multi-gate structure.
19. The display device according to claim 12 , wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor.
20. An electronic device comprising the display device according to claim 12 .
21. The display device according to claim 12 ,
wherein the first wiring is located between adjacent pixel electrodes,
wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and
wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.
22. The display device according to claim 12 , wherein a gate of the first transistor is directly connected to the other of the source and the drain of the second transistor in a circuit diagram.