Methods of forming capacitors

1. A method of forming a capacitor comprising:

depositing a first metal layer over a substrate;

coupling a diblock copolymer over the first metal layer;

selectively removing a portion of the diblock copolymer;

patterning the first metal layer using a remaining portion of the diblock copolymer;

depositing a dielectric layer over the first metal layer;

depositing a second metal layer over the dielectric layer to form a metal-insulator-metal (MIM) device; and

coupling a third metal layer between the first metal layer and the dielectric layer, the third metal layer at least partially comprising a lower electrode;

wherein the first metal layer is coupled with the dielectric layer only indirectly through one or more other elements.

2. The method of claim 1 , wherein the first metal layer at least partially comprises the lower electrode.

3. The method of claim 1 , wherein the second metal layer is an upper electrode.

4. The method of claim 1 , wherein the first metal layer is a seed layer.

5. The method of claim 1 , wherein the first metal layer and the second metal layer comprise titanium.

6. A method of forming a capacitor comprising:

coupling a tungsten layer between a first metal layer and a substrate

coupling a diblock copolymer over the first metal layer;

selectively removing a portion of the diblock copolymer;

patterning the first metal layer using a remaining portion of the diblock copolymer;

depositing a dielectric layer over the first metal layer; and

depositing a second metal layer over the dielectric layer to form a metal-insulator-metal (MIM) device.

7. The method of claim 6 , further comprising coupling a third metal layer between the first metal layer and the dielectric layer, the third metal layer at least partially comprising a lower electrode.

8. The method of claim 7 , wherein the third metal layer fully physically isolates the first metal layer from the dielectric layer.

9. The method of claim 8 , wherein the first metal layer is coupled with the dielectric layer only indirectly through one or more other elements.

10. The method of claim 6 , wherein the first metal layer at least partially comprises a lower electrode.

11. The method of claim 6 , wherein the second metal layer at least partially comprises an upper electrode.

12. The method of claim 6 , wherein the first metal layer is a seed layer.

13. The method of claim 6 , wherein the first metal layer and the second metal layer comprise titanium.

14. A method of forming a capacitor comprising:

depositing a first metal layer over a substrate;

coupling a diblock copolymer over the first metal layer;

selectively removing a portion of the diblock copolymer;

patterning the first metal layer using a remaining portion of the diblock copolymer;

depositing a dielectric layer over the first metal layer; and

depositing a second metal layer over the dielectric layer to form a metal-insulator-metal (MIM) device;

wherein a capacitance of the capacitor is greater than or equal to 25 femtofarads/square micron.

15. The method of claim 14 , further comprising coupling a third metal layer between the first metal layer and the dielectric layer, the third metal layer at least partially comprising a lower electrode.

16. The method of claim 15 , wherein the first metal layer is coupled with the dielectric layer only indirectly through one or more other elements.

17. The method of claim 14 , wherein the first metal layer at least partially comprises a lower electrode.

18. The method of claim 14 , wherein the second metal layer at least partially comprises an upper electrode.

19. The method of claim 14 , wherein the first metal layer is a seed layer.

20. The method of claim 14 , wherein the first metal layer and the second metal layer comprise titanium.