Flash device access method, apparatus, and system

1. A flash device access method, the method being applied to a flash device, and the method comprising:

reading, by a controller, specific data stored in a specific storage unit, the flash device comprising the controller and a storage array, the storage array comprising the specific storage unit and a user storage unit, the specific storage unit being configured to store the specific data, and the user storage unit being configured to store user data;

determining, by the controller, a decision voltage based on the read specific data;

reading, by the controller using the determined decision voltage, the user data stored in the user storage unit;

obtaining, by the controller, a quantity of wear operations performed on the user storage unit; and

performing, by the controller, based on the obtained quantity of wear operations on the storage unit, the same quantity of wear operations on the specific storage unit.

2. The flash device access method of claim 1 , wherein reading the specific data stored in the specific storage unit comprises:

obtaining, by the controller, a current threshold voltage of the specific storage unit; and

comparing, by the controller, a preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit.

3. The flash device access method of claim 2 , wherein determining the decision voltage based on the read specific data comprises:

calculating, by the controller, a bit error rate of the determined specific data; and

setting, by the controller, the preset decision voltage as the determined decision voltage when the bit error rate is less than a preset threshold.

4. The flash device access method of claim 2 , wherein there are at least two preset decision voltages, comparing the preset decision voltage with the current threshold voltage of the specific storage unit comprising comparing, by the controller, each preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit, and determining the decision voltage based on the read specific data comprising:

calculating, by the controller, a bit error rate of the specific data determined based on each preset decision voltage; and

selecting, by the controller, a preset decision voltage corresponding to determined specific data with a minimum bit error rate as the determined decision voltage.

5. The flash device access method of claim 1 , wherein performing the same quantity of wear operations on the specific storage unit further comprises performing one wear operation each time the quantity is greater than zero.

6. The flash device access method of claim 1 , wherein obtaining, by the controller, a quantity of wear operations performed on the user storage unit further comprises recording a count of wear operations, and wherein performing the same quantity of wear operations on the specific storage unit further comprises matching the count to a preset threshold.

7. The flash device access method of claim 1 , wherein the controller allocates a plurality of specific storage units to each user storage unit, wherein when writing the user data into the user storage unit, specific data in a first specific storage unit is read and synchronously written into a second specific storage unit.

8. A flash device access apparatus, comprising:

a storage array comprising:

a specific storage unit configured to store specific data; and

a user storage unit configured to store user data;

a memory coupled to the storage array and configured to store instructions; and

a processor coupled to the memory, the instructions causing the processor to be configured to:

read the specific data stored in the specific storage unit;

determine a decision voltage based on the read specific data;

read, using the determined decision voltage, the user data stored in the user storage unit;

obtain a quantity of wear operations performed on the user storage unit; and

perform, based on the obtained quantity of wear operations on the user storage unit, the same quantity of wear operations on the specific storage unit.

9. The flash device access apparatus of claim 8 , wherein the instructions further cause the processor to be configured to:

obtain a current threshold voltage of the specific storage unit; and

compare a preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit.

10. The flash device access apparatus of claim 9 , wherein the instructions further cause the processor to be configured to:

calculate a bit error rate of the determined specific data; and

set the preset decision voltage as the determined decision voltage when the bit error rate is less than a preset threshold.

11. The flash device access apparatus of claim 9 , wherein there are at least two preset decision voltages, and the instructions further causing the processor to be configured to:

compare each preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit;

calculate a bit error rate of the specific data determined based on each preset decision voltage; and

select a preset decision voltage corresponding to determined specific data with a minimum bit error rate as the determined decision voltage.

12. The flash device access apparatus of claim 8 , wherein the instructions further cause the processor to be configured to perform one wear operation on the specific storage unit each time the obtained quantity is greater than zero.

13. The flash device access apparatus of claim 8 , wherein the instructions further cause the processor to be configured to record a count of wear operations performed on the user storage unit, determine that the count reaches a preset threshold, and then perform the threshold count of wear operations on the specific storage unit.

14. The flash device access apparatus of claim 8 , wherein the instructions further cause the processor to be configured to allocate a plurality of specific storage units to each user storage unit, wherein when writing the user data into the user storage unit, specific data in a first specific storage unit is read and synchronously written into a second specific storage unit.

15. A flash device, comprising:

a storage array comprising:

a specific storage unit configured to store specific data; and

a user storage unit configured to store user data; and

a controller coupled to the storage array and configured to:

read the specific data stored in the specific storage unit;

determine a decision voltage based on the read specific data;

read, using the determined decision voltage, the user data stored in the user storage unit;

obtain a quantity of wear operations performed on the user storage unit; and

perform, based on the obtained quantity of wear operations on the user storage unit, the same quantity of wear operations on the specific storage unit.

16. The flash device of claim 15 , wherein the controller is further configured to:

obtain a current threshold voltage of the specific storage unit; and

compare a preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit.

17. The flash device of claim 16 , wherein the controller is further configured to:

calculate a bit error rate of the determined specific data; and

set the preset decision voltage as the determined decision voltage when the bit error rate is less than a preset threshold.

18. The flash device of claim 16 , wherein there are at least two preset decision voltages, and the controller being further configured to:

compare each preset decision voltage with the current threshold voltage of the specific storage unit to determine the specific data stored in the specific storage unit;

calculate a bit error rate of the specific data determined based on each preset decision voltage; and

select a preset decision voltage corresponding to determined specific data with a minimum bit error rate as the determined decision voltage.

19. The flash device of claim 17 , wherein the controller is further configured to perform one wear operation on the specific storage unit each time the quantity is greater than zero.

20. The flash device of claim 15 , wherein the controller is further configured to record a count of wear operations performed on the user storage unit, determine that the count reaches a preset threshold, and then perform the threshold count of wear operations on the specific storage unit.