Semiconductor device and manufacturing method, and electronic appliance
There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
1. A semiconductor device comprising:
a plurality of bumps on a first semiconductor substrate;
a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater than a minimum pitch of the bumps; and
a dam that is formed on the first semiconductor substrate, wherein the dam is formed between the lens material and the plurality of bumps.
2. The semiconductor device according to claim 1 , wherein the lens material is formed only in a pixel region on the first semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein the lens material is formed only in the region other than a region on the first semiconductor substrate that corresponds to a second semiconductor substrate configured to be bonded to the first semiconductor substrate via the bump.
4. The semiconductor device according to claim 3 , wherein the lens material is formed to have an opening in a region on the first semiconductor substrate, the opening being larger than the second semiconductor substrate.
5. The semiconductor device according to claim 4 , further comprising:
an under-fill resin formed between the second semiconductor substrate and the first semiconductor substrate,
wherein the dam prevents leakage of the under-fill resin to a region other than a region to which the second semiconductor substrate is bonded on the first semiconductor substrate,
wherein the lens material is formed to have an opening in a whole region inside the dam on the first semiconductor substrate.
6. The semiconductor device according to claim 3 , further comprising:
an under-fill resin formed between the second semiconductor substrate and the first semiconductor substrate, wherein the dam prevents leakage of the under-fill resin to a region other than a region to which the second semiconductor substrate is bonded on the first semiconductor substrate,
wherein the lens material is formed to have an opening in only a partial region inside the dam on the first semiconductor substrate.
7. The semiconductor device according to claim 3 , wherein the lens material is formed to have an opening in a region on the first semiconductor substrate, the opening is smaller than the second semiconductor substrate.
8. The semiconductor device according to claim 1 , wherein the side of the lens material closest to the bump is a side of an on-chip lens.
9. The semiconductor device according to claim 1 , further comprising:
an electrode pad for bump connection formed on the first semiconductor substrate and configured to be connected to the bump; and
an electrode pad for wire bonding formed on the first semiconductor substrate and configured to be connected to a wire bonding,
wherein a ratio of a distance between a side of an opening portion for wire bonding closest to the lens material and a side of the lens material closest to the opening portion for wire bonding to a size of the opening portion for wire bonding is smaller than a ratio of a distance between a side of an opening portion for a bump closest to the lens material and a side of the lens material closest to the opening portion for a bump to a size of the opening portion for a bump.
10. A method of manufacturing a semiconductor device comprising:
forming a plurality of bumps on a first semiconductor substrate, and
forming a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a hump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps; and
forming a dam on the first semiconductor substrate, wherein the dam is formed between the lens material and the plurality of bumps.