Quantum dot, production method thereof, and electronic device including the same

1. A quantum dot comprising

a core comprising a first semiconductor nanocrystal and

a multi-layered shell disposed on the core and comprising at least two layers,

wherein the quantum dot does not comprise cadmium;

wherein the first semiconductor nanocrystal comprises a Group III-V compound comprising indium, the multi-layered shell comprises a first layer surrounding at least a portion of a surface of the core, the first layer comprising a second semiconductor nanocrystal, the second semiconductor nanocrystal comprising a Group II-V compound, and a second layer disposed on the first layer, the second layer comprising a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal and comprising a Group II-VI compound; and

wherein in the quantum dot, an amount of zinc is greater than or equal to about 9.5 moles, per one mole of the indium.

2. The quantum dot of claim 1 , wherein the Group III-V compound further comprises phosphorous.

3. The quantum dot of claim 2 , wherein the Group III-V compound further comprises zinc and the zinc is either alloyed or doped in an indium phosphide.

4. The quantum dot of claim 1 , wherein in the quantum dot, a molar ratio of phosphorous with respect to indium is greater than or equal to about 1.

5. The quantum dot of claim 1 , wherein a bulk energy bandgap of the second semiconductor nanocrystal is greater than or equal to a bulk energy bandgap of the first semiconductor nanocrystal and less than a bulk energy bandgap of the third semiconductor nanocrystal.

6. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises a zinc phosphide.

7. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal further comprises a Group IIIA metal other than indium, a Group IV element, titanium, iron, or a combination thereof.

8. The quantum dot of claim 1 , wherein the first layer is disposed directly on the surface of the core.

9. The quantum dot of claim 1 , wherein a thickness of the first layer is less than or equal to about 3 monolayers.

10. The quantum dot of claim 1 , wherein the third semiconductor nanocrystal comprises ZnSe, ZnSeS, ZnS, or a combination thereof.

11. The quantum dot of claim 1 , wherein the second layer has a composition varying in a radial direction.

12. The quantum dot of claim 1 , wherein the multi-layered shell comprises a third layer that is disposed on the second layer, the third layer comprises a fourth semiconductor nanocrystal comprising a composition different from that of the third semiconductor nanocrystal.

13. The quantum dot of claim 12 , wherein the fourth semiconductor nanocrystal comprises a compound having an energy bandgap greater than that of the third semiconductor nanocrystal.

14. The quantum dot of claim 1 , wherein the quantum dot does not comprise fluorine, boron, or a combination thereof.

15. The quantum dot of claim 1 , wherein a quantum efficiency of the quantum dot is greater than or equal to about 65%.

16. A quantum dot population comprising a plurality of the quantum dots of claim 1 , wherein the plurality of quantum dots has an average size of greater than or equal to about 4 nanometers and less than or equal to about 6 nanometers and a standard deviation of the size is less than or equal to about 20% of the average size.

17. A quantum dot-polymer composite comprising:

a polymer matrix; and

a plurality of quantum dots dispersed in the polymer matrix;

wherein the plurality of quantum dots comprises the quantum dot of claim 1 .

18. The quantum dot-polymer composite of claim 17 , wherein the polymer matrix comprises a crosslinked polymer, a binder polymer comprising a carboxylic acid group, or a combination thereof.

19. A display device, which comprises

a light source and

a light emitting element,

wherein the light emitting element comprises the quantum dot-polymer composite of claim 17 and the light source is configured to provide the light emitting element with incident light.

20. The display device of claim 19 , wherein the incident light has a luminescence peak wavelength of about 440 nanometers to about 460 nanometers.

21. The display device of claim 19 , wherein, the light emitting element comprises a sheet of the quantum dot polymer composite.

22. The display device of claim 19 , wherein the light emitting element comprises a stacked structure comprising a substrate and a light emitting layer disposed on the substrate, wherein the light emitting layer comprises a pattern of the quantum dot polymer composite and the pattern comprises at least one repeating section configured to emit light at a predetermined wavelength.

23. The display device of claim 22 , wherein the pattern comprises a first section configured to emit a first light and a second section configured to emit a second light having a different center wavelength from the first light.

24. The display device of claim 23 , wherein the light source comprises a plurality of light-emitting units corresponding to each of the first section and the second section, wherein the light-emitting units comprise a first electrode and a second electrode facing each other and an electroluminescence layer disposed between the first electrode and the second electrode.

25. The display device of claim 22 , wherein the display device further comprises a lower substrate, a polarizer disposed under the lower substrate, and a liquid crystal layer disposed between the stacked structure and the lower substrate, wherein the stacked structure is disposed so that the light emitting layer faces the liquid crystal layer.