IP Library › Granted Patent US 12,509,631
Granted Patent B2
US 12,509,631 · App. 18/452,631 · Granted Dec 30, 2025

Semiconductor nanocrystal particles and devices including the same

Inventors: Jeong Hee Lee (Seongnam-si, KR); Eun Joo Jang (Suwon-si, KR); Hyun A Kang (Suwon-si, KR); Tae Hyung Kim (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
C09K11/883C09K11/02C09K11/565B82Y20/00B82Y40/00H10K50/115Y10S977/774Y10S977/824Y10S977/892Y10S977/95
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Quick Facts
Patent No.
US 12,509,631
App. No.
18/452,631
Granted
Dec 30, 2025
Kind
B2
Abstract

A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Claims (31)

1 . A semiconductor nanocrystal particle comprising

zinc,

tellurium, and

selenium,

wherein a mole ratio of the tellurium to the selenium is less than 0.029:1,

wherein the semiconductor nanocrystal particle is configured to emit blue light comprising a maximum peak emission at a wavelength of greater than 450 nanometers (nm), and

wherein the semiconductor nanocrystal particle is configured to show a quantum efficiency of greater than or equal to about 60%.

2 . The semiconductor nanocrystal particle of claim 1 , wherein a mole ratio of the tellurium to the selenium is greater than or equal to about 0.001:1 and less than or equal to 0.025:1.

3 . The semiconductor nanocrystal particle of claim 1 , wherein a mole ratio of the tellurium to the selenium is from about 0.002:1 to about 0.024:1.

4 . The semiconductor nanocrystal particle of claim 1 , wherein a mole ratio of the tellurium to the zinc is less than or equal to about 0.03:1.

5 . The semiconductor nanocrystal particle of claim 1 , wherein an amount of the tellurium is less than or equal to about 1 weight percent, based on a total weight of the semiconductor nanocrystal particle, and optionally wherein the semiconductor nanocrystal particle does not comprise cadmium.

6 . The semiconductor nanocrystal particle of claim 1 , wherein a size of the semiconductor nanocrystal particle is greater than or equal to about 6 nanometers and less than or equal to about 50 nanometers.

7 . The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle further comprises sulfur and

optionally wherein an amount of sulfur in an inner portion of the semiconductor nanocrystal particle is less than in an outer portion of the semiconductor nanocrystal particle.

8 . The semiconductor nanocrystal particle of claim 7 , wherein a mole ratio of sulfur to zinc is greater than or equal to about 0.1:1, and optionally wherein a mole ratio of a sum of selenium and sulfur to zinc is less than or equal to about 1:1.

9 . The semiconductor nanocrystal particle of claim 1 , wherein the particle comprises a core comprising a first semiconductor material comprising zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and comprising a second semiconductor material having a different composition from the first semiconductor material, and

optionally wherein the shell comprises a first layer disposed directly on the core, and an outermost layer, wherein the first layer comprises ZnSeS and the outermost layer comprises ZnS.

10 . The semiconductor nanocrystal particle of claim 1 , wherein the maximum peak emission is at a wavelength of greater than 450 nanometers to about 470 nanometers.

11 . The semiconductor nanocrystal particle of claim 1 , wherein the maximum peak emission has a full width at half maximum of less than or equal to about 48 nanometers, or

wherein the semiconductor nanocrystal particle has quantum efficiency of greater than or equal to about 70%.

12 . An electroluminescent device comprising an anode and a cathode facing each other and an emission layer disposed between the anode and the cathode and comprising a plurality of semiconductor nanocrystal particles,

wherein the plurality of semiconductor nanocrystal particles comprises zinc, tellurium, selenium, and optionally sulfur, wherein in the plurality of semiconductor nanocrystal particles, a mole ratio of the tellurium to the selenium is less than 0.029:1, wherein the plurality of semiconductor nanocrystal particles is configured to emit blue light comprising a maximum peak emission at a wavelength of greater than 450 nanometers (nm).

13 . The electroluminescent device of claim 12 , wherein the plurality of semiconductor nanocrystal particles further comprise sulfur, and wherein in the plurality of semiconductor nanocrystal particles, a mole ratio of sulfur to zinc is greater than or equal to about 0.1:1, or a mole ratio of a sum of selenium and sulfur to zinc is less than or equal to about 1:1.

14 . The electroluminescent device of claim 13 , wherein in the plurality of semiconductor nanocrystal particles, a mole ratio of sulfur to zinc is greater than or equal to about 0.2:1 and a mole ratio of a sum of selenium and sulfur to zinc is greater than or equal to about 0.3:1.

15 . The electroluminescent device of claim 12 , wherein the maximum peak emission has a full width at half maximum of less than or equal to about 48 nanometers, and

wherein the semiconductor nanocrystal particle has quantum efficiency of greater than or equal to about 60%.

16 . The electroluminescent device of claim 12 , wherein the maximum peak emission is at a wavelength of from about 460 nanometers to about 470 nanometers.

17 . The electroluminescent device of claim 12 , wherein in the plurality of semiconductor nanocrystal particles, a mole ratio of the tellurium to the selenium is greater than or equal to about 0.001:1 and less than or equal to 0.025:1.

18 . The electroluminescent device of claim 12 , wherein in the plurality of semiconductor nanocrystal particles, a mole ratio of the tellurium to the selenium is greater than or equal to about 0.002:1 and less than or equal to 0.024:1.

19 . A display device comprising an electroluminescent device of claim 12 .

20 . An electronic device comprising the semiconductor nanocrystal particle of claim 1 .

Priority Claims (1)
KR 10-2017-0058474 · May 11, 2017 · national
Continuity (3)
Continuation 17709830 · Mar 31, 2022
Continuation 15976197 · May 10, 2018
Related Publication 20230392074A1 · Dec 7, 2023
References Cited (211)
US 5140385A · Kukimoto et al. · 1992 [cited by applicant]
US 6645645B1 · Adachi et al. · 2003 [cited by applicant]
US 7390568B2 · Kim et al. · 2008 [cited by applicant]
US 7700200B2 · Bulovic et al. · 2010 [cited by applicant]
US 7767260B2 · Peng et al. · 2010 [cited by applicant]
US 7825405B2 · Kim et al. · 2010 [cited by applicant]
US 7829189B2 · Jang et al. · 2010 [cited by applicant]
US 8120010B2 · Cho et al. · 2012 [cited by applicant]
US 8277942B2 · Kim et al. · 2012 [cited by applicant]
US 8313714B2 · Asokan et al. · 2012 [cited by applicant]
US 8377333B2 · Ramprasad · 2013 [cited by applicant]
US 8420155B2 · Nie et al. · 2013 [cited by applicant]
US 8637082B2 · Tulsky et al. · 2014 [cited by applicant]
US 8901333B2 · Tulsky et al. · 2014 [cited by applicant]
US 8906265B2 · Breen et al. · 2014 [cited by applicant]
US 9284484B2 · Jang et al. · 2016 [cited by applicant]
US 9410959B2 · Kim et al. · 2016 [cited by applicant]
US 9493351B2 · Zhong et al. · 2016 [cited by applicant]
US 9534168B2 · Breen et al. · 2017 [cited by applicant]
US 9570549B2 · Jang et al. · 2017 [cited by applicant]
US 9595625B2 · Murayama et al. · 2017 [cited by applicant]
US 9698311B2 · Greco et al. · 2017 [cited by applicant]
US 9834724B2 · Kim et al. · 2017 [cited by applicant]
US 9887318B2 · Titov et al. · 2018 [cited by applicant]
US 9957442B2 · Banin et al. · 2018 [cited by applicant]
US 10074770B2 · Park et al. · 2018 [cited by applicant]
US 10147844B2 · Kim et al. · 2018 [cited by applicant]
US 10559712B2 · Park et al. · 2020 [cited by applicant]
US 10590340B2 · Jang et al. · 2020 [cited by applicant]
US 10619096B2 · Park et al. · 2020 [cited by applicant]
US 10647917B2 · Lee · 2020 [cited by examiner]
US 10954440B2 · Won et al. · 2021 [cited by applicant]
US 10954441B2 · Kim · 2021 [cited by examiner]
US 10975298B2 · Jang et al. · 2021 [cited by applicant]
US 10978657B2 · Kim · 2021 [cited by examiner]
US 11011672B2 · Park et al. · 2021 [cited by applicant]
US 11011720B2 · Kim · 2021 [cited by examiner]
US 11142685B2 · Won et al. · 2021 [cited by applicant]
US 11142692B2 · Zhang et al. · 2021 [cited by applicant]
US 11180694B2 · Lee · 2021 [cited by examiner]
US 11193061B2 · Kim · 2021 [cited by examiner]
US 11193062B2 · Park et al. · 2021 [cited by applicant]
US 11312901B2 · Jang et al. · 2022 [cited by applicant]
US 11319487B2 · Lee · 2022 [cited by examiner]
US 11355583B2 · Kwon et al. · 2022 [cited by applicant]
US 11365348B2 · Park et al. · 2022 [cited by applicant]
US 11505740B2 · Won et al. · 2022 [cited by applicant]
US 11512252B2 · Park et al. · 2022 [cited by applicant]
US 11566345B2 · Kim et al. · 2023 [cited by applicant]
US 11591518B2 · Won · 2023 [cited by examiner]
US 11661550B2 · Kim · 2023 [cited by examiner]
US 11767472B2 · Lee · 2023 [cited by examiner]
US 11827828B2 · Park et al. · 2023 [cited by applicant]
US 11834597B2 · Lee · 2023 [cited by examiner]
US 11981851B2 · Kim · 2024 [cited by examiner]
US 11981852B2 · Won · 2024 [cited by examiner]
US 12227687B2 · Kim · 2025 [cited by examiner]
US 20040110002A1 · Kim et al. · 2004 [cited by applicant]
US 20050214536A1 · Schrier et al. · 2005 [cited by applicant]
US 20050274944A1 · Jang et al. · 2005 [cited by applicant]
US 20080290797A1 · Park et al. · 2008 [cited by applicant]
US 20090039764A1 · Cho et al. · 2009 [cited by applicant]
US 20090108235A1 · Ando et al. · 2009 [cited by applicant]
US 20090230382A1 · Banin et al. · 2009 [cited by applicant]
US 20090301564A1 · Kim et al. · 2009 [cited by applicant]
US 20100025637A1 · Asokan et al. · 2010 [cited by applicant]
US 20100044635A1 · Breen et al. · 2010 [cited by applicant]
US 20100052512A1 · Clough et al. · 2010 [cited by applicant]
US 20100108984A1 · Cho et al. · 2010 [cited by applicant]
US 20110012061A1 · Kim et al. · 2011 [cited by applicant]
US 20110175054A1 · Ren et al. · 2011 [cited by applicant]
US 20120032138A1 · Kim et al. · 2012 [cited by applicant]
US 20120103404A1 · Fuke et al. · 2012 [cited by applicant]
US 20120319054A1 · Kim et al. · 2012 [cited by applicant]
US 20130069018A1 · Zhu et al. · 2013 [cited by applicant]
US 20130115455A1 · Banin et al. · 2013 [cited by applicant]
US 20130277669A1 · Krebs et al. · 2013 [cited by applicant]
US 20140014896A1 · Chung et al. · 2014 [cited by applicant]
US 20140117292A1 · Jun et al. · 2014 [cited by applicant]
US 20140197400A1 · Li et al. · 2014 [cited by applicant]
US 20140227862A1 · Song et al. · 2014 [cited by applicant]
US 20140339497A1 · Qu et al. · 2014 [cited by applicant]
US 20140361228A1 · Jang et al. · 2014 [cited by applicant]
US 20150076494A1 · Pickett et al. · 2015 [cited by applicant]
US 20150262727A1 · Cho et al. · 2015 [cited by applicant]
US 20160087047A1 · Jeong et al. · 2016 [cited by applicant]
US 20160160060A1 · Kikuchi et al. · 2016 [cited by applicant]
US 20160167965A1 · Jang et al. · 2016 [cited by applicant]
US 20160225958A1 · Kazama et al. · 2016 [cited by applicant]
US 20160333267A1 · Chen et al. · 2016 [cited by applicant]
US 20170152436A1 · Jang et al. · 2017 [cited by applicant]
US 20170352779A1 · Kuzumoto et al. · 2017 [cited by applicant]
US 20180026166A1 · Kazama et al. · 2018 [cited by applicant]
US 20180033856A1 · Kwon et al. · 2018 [cited by applicant]
US 20180074254A1 · Jang et al. · 2018 [cited by applicant]
US 20180094190A1 · Kim et al. · 2018 [cited by applicant]
US 20180158985A1 · Titov et al. · 2018 [cited by applicant]
US 20180179441A1 · Park et al. · 2018 [cited by applicant]
US 20180182969A1 · Fujiyama et al. · 2018 [cited by applicant]
US 20180201834A1 · Banin et al. · 2018 [cited by applicant]
US 20180216003A1 · Zhang et al. · 2018 [cited by applicant]
US 20180327665A1 · Lee et al. · 2018 [cited by applicant]
US 20190002759A1 · D'Amico et al. · 2019 [cited by applicant]
US 20190006556A1 · Park et al. · 2019 [cited by applicant]
US 20190119569A1 · Lee et al. · 2019 [cited by applicant]
US 20190157596A1 · Kim et al. · 2019 [cited by applicant]
US 20190211265A1 · Park et al. · 2019 [cited by applicant]
US 20190390109A1 · Ippen et al. · 2019 [cited by applicant]
US 20200217974A1 · Park et al. · 2020 [cited by applicant]
US 20210183999A1 · Kwon et al. · 2021 [cited by applicant]
US 20220220379A1 · Lee et al. · 2022 [cited by applicant]
US 20220243125A1 · Jang et al. · 2022 [cited by applicant]
US 20230093467A1 · Kim et al. · 2023 [cited by applicant]
US 20230106180A1 · Won et al. · 2023 [cited by applicant]
US 20240254388A1 · Won · 2024 [cited by examiner]
CA 2550153A1 · 2005 [cited by applicant]
CN 101319140A · 2008 [cited by applicant]
CN 102086396A · 2011 [cited by applicant]
CN 105399136A · 2016 [cited by applicant]
CN 105609651A · 2016 [cited by applicant]
CN 105830236A · 2016 [cited by applicant]
CN 106381146A · 2017 [cited by applicant]
CN 106957652A · 2017 [cited by applicant]
CN 107663452A · 2018 [cited by applicant]
CN 107794044A · 2018 [cited by applicant]
CN 108641720A · 2018 [cited by applicant]
CN 108865109A · 2018 [cited by applicant]
CN 109817815A · 2019 [cited by applicant]
CN 110028948A · 2019 [cited by applicant]
CN 110028968A · 2019 [cited by applicant]
CN 110028969A · 2019 [cited by applicant]
CN 110172348A · 2019 [cited by applicant]
CN 110240896A · 2019 [cited by applicant]
EP 2448017A2 · 2012 [cited by applicant]
EP 2621599A1 · 2013 [cited by applicant]
EP 2820108A1 · 2015 [cited by applicant]
EP 3037195A1 · 2016 [cited by applicant]
EP 3401380A1 · 2018 [cited by applicant]
EP 3486964A1 · 2019 [cited by applicant]
EP 3536762A1 · 2019 [cited by applicant]
EP 3613826A1 · 2020 [cited by applicant]
JP 2006005256A · 2006 [cited by applicant]
JP 2006508012A · 2006 [cited by applicant]
JP 2006291175A · 2006 [cited by applicant]
JP 2010114079A · 2010 [cited by applicant]
JP 2016503574A · 2016 [cited by applicant]
JP 2016145328A · 2016 [cited by applicant]
JP 2021525814A · 2021 [cited by applicant]
KR 20040032456A · 2004 [cited by applicant]
KR 100442775B1 · 2004 [cited by applicant]
KR 20110004775A · 2011 [cited by applicant]
KR 20120088273A · 2012 [cited by applicant]
KR 20130102072A · 2013 [cited by applicant]
KR 20140056500A · 2014 [cited by applicant]
KR 20140121217A · 2014 [cited by applicant]
KR 20140121351A · 2014 [cited by applicant]
KR 20140143875A · 2014 [cited by applicant]
KR 1020140143875A · 2014 [cited by applicant]
KR 20150032655A · 2015 [cited by applicant]
KR 20150035300A · 2015 [cited by applicant]
KR 101525524B1 · 2015 [cited by applicant]
KR 1525524B1 · 2015 [cited by applicant]
KR 20150121355A · 2015 [cited by applicant]
KR 1699540B1 · 2017 [cited by applicant]
KR 20170036557A · 2017 [cited by applicant]
KR 20170074585A · 2017 [cited by applicant]
KR 20170080795A · 2017 [cited by applicant]
KR 1020170078928A · 2017 [cited by applicant]
KR 20180013801A · 2018 [cited by applicant]
WO 2005001889A1 · 2005 [cited by applicant]
WO 2008063652A1 · 2008 [cited by applicant]
WO 2012035535A1 · 2012 [cited by applicant]
WO 2012041847A1 · 2012 [cited by applicant]
WO 2012161065A1 · 2012 [cited by applicant]
WO 2015036762A1 · 2015 [cited by applicant]
WO 2015056749A1 · 2015 [cited by applicant]
WO 2017019789A1 · 2017 [cited by applicant]
WO 2019072884A1 · 2019 [cited by applicant]
Sonawane. A case study: Te in ZnSe and Mn-doped ZnSe quantum dots. Nanotechnology 22 305702. 2011. (Year: 2011). [cited by examiner]
K G Sonawance et al. “A case study: Te in ZnSe and Mn-doped ZnSe quantum dots”. Nanotechnology 22, Jun. 27, 2011, pp. 1-7. [cited by applicant]
Li, C. et al., “Synthesis of Cd-free water-soluble ZnSe1—xTex nanocrystals with high luminescence in the blue region”, Journal of Colloid and Interface Science, Feb. 14, 2008, pp. 468-476, vol. 321, No. 2, ScienceDirect. [cited by applicant]
Xingliang Dai, et al., Solution-processed, high-performance light-emitting diodes based on quantum dots, 96, Nature, vol. 515, Nov. 6, 2014, 15 pp. [cited by applicant]
Angela Fiore et al., “Raman and photoluminescence spectra of ZnTe/CdSe and ZnTe/CdTe tetrapod shaped nano-hetero structures,” Superlattices and Microstructures, Oct. 27, 2017, pp. 143-146, vol. 113. [cited by applicant]
Aqiang Wang et al., “Bright, efficient, and color-stable violet ZnSe-based quantum dot light-emitting diodes,” Nanoscale, Jan. 5, 2015, pp. 2951-2959, vol. 7. [cited by applicant]
Wenyu Ji, et al., Cadmium-free quantum dot light emitting devices: energy-transfer realizing pure blue emission, Jan. 1, 2013 / vol. 38, No. 1 / Optics Letters, pp. 7-9. [cited by applicant]
Cheong-Soo Hwang et al., “Characterization of the ZnSe/ZnS Core Shell Quantum Dots Synthesized at Various Temperature Conditions and the Water Soluble ZnSe/ZnS Quantum Dot,” Bulletin-Korean Chemical Society, 2005, pp. 1… [cited by applicant]
Chinese Office Action for Chinese Patent Application No. 201910180450.6 Dated Jun. 15, 2023. [cited by applicant]
Chin-Hau Chia et al., “Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells,” Journal of Luminescence, Jan. 7, 2011, pp. 956-959, vol. 131. [cited by applicant]
Christian Ippen et al., “ZnSe/ZnS quantum dots as emitting material in blue QD-LEDs with narrow emission peak and wavelength tunability,” Organic Electronics, Nov. 15, 2013, pp. 126-131. vol. 15. [cited by applicant]
Christian Ippen, et al., High efficiency heavy metal free QD-LEDs for next generation displays, J Soc Inf Display. 2019;1-9. [cited by applicant]
Chunliang Li et al., “Synthesis of Cd-free water-soluble ZnSe1—xTex nanocrystals with high luminescence in the blue region,” Journal of Colloid and Interface Science, Feb. 14, 2008, pp. 468-476, vol. 321. [cited by applicant]
Extended European Search Report dated Dec. 6, 2019, of the corresponding European Patent Application No. 19193277.1. [cited by applicant]
Extended European Search Report dated Jul. 9, 2019, of the corresponding European Patent Application No. 19161974.1. [cited by applicant]
Extended European Search Report dated Jul. 9, 2019, of the corresponding European Patent Application No. 19161979.0. [cited by applicant]
Extended European Search Report dated Nov. 18, 2020, of the corresponding European Patent Application No. 20193705.9. [cited by applicant]
Hiroshi Asano et al., “Design of cadmium-free colloidal II-VI semiconductorquantum dots exhibiting RGB emission,” AIP Advances, Apr. 20, 2017, pp. 1-7, vol. 7, No. 045309. [cited by applicant]
Huaibin Shen et al., “Phosphine-free synthesis of high quality ZnSe, ZnSe/ZnS, and Cu-, Mn-doped ZnSe nanocrystals,” Dalton Transactions, Oct. 30, 2009, pp. 10534-10540. [cited by applicant]
Huaibin Shen et al., “Size- and shape-controlled synthesis of ZnSe nanocrystals using SeO2 as selenium precursor,” Dalton Transactions, Oct. 26, 2010, pp. 11432-11438, vol. 39. [cited by applicant]
Huaibin Shen, et al., High-Effi cient Deep-Blue Light-Emitting Diodes by Using High Quality . . . , Adv. Funct. Mater. 2014, 24, 2367-2373. [cited by applicant]
Irshad Ahmad Mir et al., “Cadmium-free aqueous synthesis of ZnSe and ZnSe@ZnS core-shell quantum dots and their differential bioanalyte sensing potential,” Materials Research Express, Oct. 10, 2016, pp. 1-9, vol. 3. [cited by applicant]
Joren Eilers et al., “Unravelling the Size and Temperature Dependence of Exciton Lifetimes in Colloidal ZnSe Quantum Dots,” The Journal of Physical Chemistry, Sep. 22, 2014, pp. 23313-23319, vol. 118, Issue No. 40. [cited by applicant]
Kipil Lim et al., “Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth,” Nanotechnology, Nov. 9, 2012, pp. 1-7, vol. 23, No. 485609. [cited by applicant]
Lanlan Chen et al., “Green chemical approaches to ZnSe quantum dots: preparation, characterisation and formation mechanism,” Journal of Experimental Nanoscience, Mar. 24, 2010, pp. 106-117, vol. 5, No. 2. [cited by applicant]
Lishuang Wang, et al., Blue Quantum Dot Light-Emitting Diodes with HighElectroluminescent Efficiency, ACS Appl. Mater. Interfaces, 9, 38755-38760 (2017). [cited by applicant]
Notice of Allowance dated Jan. 21, 2025 of the corresponding Korean Patent Application No. 10-2019-0027400. [cited by applicant]
Notice of Allowance dated Jul. 11, 2023 of the corresponding Korean Patent Application No. 10-2017-0155162. [cited by applicant]
Office Action dated Aug. 14, 2023, of the corresponding Chinese Patent Application No. 202010895937.5, 13 pp. [cited by applicant]
Office Action dated Jan. 9, 2024, of the corresponding Chinese Patent Application No. 201910785624.1. [cited by applicant]
Office Action dated Jun. 29, 2022 of the corresponding Korean Patent Application No. 10-2017-0155162. [cited by applicant]
Pian Wu et al., “Optimization of Synthesis and Modification of ZnSe/ZnS Quantum Dots for Fluorescence Detection of [cited by applicant]
Wenyu Ji et al., “High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure,” Applied Physics Letters, Jul. 30, 2013, pp. 053106-1˜053106-4, vol. 103. [cited by applicant]