Semiconductor nanocrystal particles and devices including the same
A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
1. A semiconductor nanocrystal particle comprising
zinc,
tellurium, and
selenium,
wherein an amount of the tellurium is less than an amount of the selenium and a mole ratio of the tellurium to the selenium is less than 0.01:1,
the particle comprises a core comprising a first semiconductor material comprising zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and comprising a second semiconductor material having a different composition from the first semiconductor material,
the semiconductor nanocrystal particle emits blue light comprising a maximum peak emission at a wavelength of greater than or equal to 449 nanometers (nm) and less than or equal to about 470 nanometers (nm), and
wherein the maximum peak emission has a full width at half maximum of less than or equal to about 34 nm.
2. The semiconductor nanocrystal particle of claim 1 , wherein a mole ratio of the tellurium to the selenium is greater than or equal to about 0.001:1.
3. The semiconductor nanocrystal particle of claim 1 , wherein a mole ratio of the tellurium to the selenium is from about 0.001:1 to about 0.007:1.
4. The semiconductor nanocrystal particle of claim 1 , wherein an amount of the zinc is greater than an amount of the selenium.
5. The semiconductor nanocrystal particle of claim 4 , wherein a mole ratio of the tellurium to the zinc is less than or equal to about 0.03:1.
6. The semiconductor nanocrystal particle of claim 1 , wherein an amount of the tellurium is less than or equal to about 1 weight percent, based on a total weight of the semiconductor nanocrystal particle.
7. The semiconductor nanocrystal particle of claim 1 , wherein a size of the core is greater than or equal to about 2 nanometers.
8. The semiconductor nanocrystal particle of claim 1 , wherein the shell comprises a plurality of layers and adjacent layers of the plurality of layers comprise different semiconductor materials.
9. The semiconductor nanocrystal particle of claim 8 , wherein the shell comprises
a first layer disposed directly on the core, and
an outermost layer,
wherein the first layer comprises ZnSeS and the outermost layer comprises ZnS.
10. The semiconductor nanocrystal particle of claim 1 , wherein the maximum peak emission is at a wavelength of greater than or equal to 450 nanometers to about 470 nanometers.
11. The semiconductor nanocrystal particle of claim 1 , wherein the maximum peak emission has a full width at half maximum of less than or equal to about 30 nanometers.
12. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has quantum efficiency of greater than or equal to about 60%.
13. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle does not comprise cadmium.
14. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a multipod shape.
15. A method of producing the semiconductor nanocrystal particle of claim 1 , comprising
preparing a zinc precursor solution comprising a zinc precursor and an organic ligand;
heating the zinc precursor solution at a first reaction temperature and adding a selenium precursor and a tellurium precursor, and optionally an organic ligand, to form a first semiconductor nanocrystal core comprising zinc, selenium, and tellurium;
preparing a first shell precursor solution comprising a metal-containing first shell precursor and an organic ligand; and
heating the first shell precursor solution at a second reaction temperature and adding the first semiconductor nanocrystal core and a second shell precursor to form a shell of a second semiconductor nanocrystal on the first semiconductor nanocrystal core, the second shell precursor comprising a non-metal element.
16. The method of claim 15 , wherein
the zinc precursor comprises a Zn powder, ZnO, an alkylated Zn compound, a Zn alkoxide, a Zn carboxylate, a Zn nitrate, a Zn perchlorate, a Zn sulfate, a Zn acetylacetonate, a Zn halide, a Zn cyanide, a Zn hydroxide, or a combination thereof,
the selenium precursor comprises selenium-trioctylphosphine, selenium-tributylphosphine, selenium-triphenylphosphine, selenium-diphenylphosphine, or a combination thereof, and
the tellurium precursor comprises tellurium-tributylphosphine, tellurium-triphenylphosphine, tellurium-diphenylphosphine, or a combination thereof.
17. The method of claim 15 , wherein an amount of the selenium precursor is greater than or equal to about 20 moles and less than or equal to about 60 moles, based on one mole of the tellurium precursor.
18. The method of claim 15 , wherein the first shell precursor comprises zinc and the second shell precursor comprises selenium, sulfur, or a combination thereof.
19. The method of claim 15 , wherein the organic ligand comprises RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, RH 2 PO, R 2 HPO, R 3 PO, RH 2 P, R 2 HP, R 3 P, ROH, RCOOR, RPO(OH) 2 , R 2 POOH, RHPOOH, or a combination thereof (wherein, R is the same or different and is independently a C1 to C24 substituted or unsubstituted aliphatic hydrocarbon group, a C6 to C20 substituted or unsubstituted aromatic hydrocarbon group, or a combination).
20. An electronic device comprising the semiconductor nanocrystal particle of claim 1 .