Semiconductor nanoparticles and electronic device including the same
A semiconductor nanoparticle includes a cluster consisting of a first semiconductor compound, a core covering at least a portion of the surface of the cluster and including a second semiconductor compound, and a shell covering at least a portion of the surface of the core and including a third semiconductor compound. The first semiconductor compound and the third semiconductor compound each include zinc (Zn), the second semiconductor compound includes Zn, tellurium (Te), and selenium (Se), the first semiconductor compound and the second semiconductor compound are different from each other, and the second semiconductor compound and the third semiconductor compound are different from each other.
1 . A semiconductor nanoparticle comprising:
a cluster consisting of a first semiconductor compound;
a core covering at least a portion of a surface of the cluster and comprising a second semiconductor compound; and
a shell covering at least a portion of a surface of the core and comprising a third semiconductor compound,
wherein the first semiconductor compound and the third semiconductor compound each comprise zinc (Zn),
the second semiconductor compound comprises zinc (Zn), tellurium (Te), and selenium (Se),
the first semiconductor compound and the second semiconductor compound are different from each other,
the second semiconductor compound and the third semiconductor compound are different from each other, and
the first semiconductor compound comprises ZnSe.
2 . The semiconductor nanoparticle of claim 1 , wherein the second semiconductor compound is represented by ZnSe 1-x Te x , and
x satisfies 0.05<x≤0.5.
3 . The semiconductor nanoparticle of claim 2 , wherein x satisfies 0.33≤x≤0.5.
4 . The semiconductor nanoparticle of claim 1 , wherein the third semiconductor compound comprises ZnSe or ZnSe y S 1-y , and
y satisfies 0≤y<1.
5 . The semiconductor nanoparticle of claim 1 , wherein a band gap of the cluster is greater than that of the core, and
a band gap of the shell is greater than that of the core.
6 . The semiconductor nanoparticle of claim 1 , wherein the semiconductor nanoparticle has a spherical quantum well.
7 . The semiconductor nanoparticle of claim 1 , wherein the semiconductor nanoparticle emits light having a maximum emission wavelength in a range of 445 nanometers to 550 nanometers.
8 . The semiconductor nanoparticle of claim 1 , further comprising an outer shell covering at least a portion of a surface of the shell and comprising a fourth semiconductor compound,
wherein the fourth semiconductor compound comprises a Group II element.
9 . The semiconductor nanoparticle of claim 8 , wherein the fourth semiconductor compound comprises zinc (Zn), and is a binary compound or a ternary compound.
10 . The semiconductor nanoparticle of claim 8 , wherein the fourth semiconductor compound comprises ZnS, ZnSe, ZnTe, ZnO, ZnSeS, ZnSeTe, ZnSTe, or any combination thereof.
11 . The semiconductor nanoparticle of claim 8 , wherein the semiconductor nanoparticle emits light having a maximum emission wavelength in a range of 470 nanometers to 650 nanometers.
12 . The semiconductor nanoparticle of claim 1 , wherein an average diameter of the cluster is less than or equal to 1.5 nanometers.
13 . The semiconductor nanoparticle of claim 1 , wherein an average diameter of the core is in a range of 2.0 nanometers to 5.0 nanometers.
14 . The semiconductor nanoparticle of claim 1 , wherein an average diameter of the semiconductor nanoparticle is in a range of 3.0 nanometers to 13.0 nanometers.
15 . An electronic device comprising:
a first substrate;
a light-emitting device; and
a second substrate comprising:
a semiconductor nanoparticle comprising:
a cluster consisting of a first semiconductor compound;
a core covering at least a portion of a surface of the cluster and comprising a second semiconductor compound; and
a shell covering at least a portion of a surface of the core and comprising a third semiconductor compound,
wherein the first semiconductor compound and the third semiconductor compound each comprise zinc (Zn),
the second semiconductor compound comprises zinc (Zn), tellurium (Te), and selenium (Se),
the first semiconductor compound and the second semiconductor compound are different from each other, and
the second semiconductor compound and the third semiconductor compound are different from each other,
wherein the semiconductor nanoparticle is comprised in one region of the second substrate, and
the semiconductor nanoparticle absorbs blue light and emits visible light.
16 . The electronic device of claim 8 , wherein the second substrate further includes another region distinct from the one region, and
the another region comprises a scatterer, and does not comprise the semiconductor nanoparticle.
17 . The electronic device of claim 15 , wherein the second substrate is disposed in a direction in which light emitted from the light-emitting device travels.
18 . An electronic device comprising:
a first electrode;
a second electrode; and
an interlayer between the first electrode and the second electrode, the interlayer comprising:
a semiconductor nanoparticle comprising:
a cluster consisting of a first semiconductor compound;
a core covering at least a portion of a surface of the cluster and comprising a second semiconductor compound; and
a shell covering at least a portion of a surface of the core and comprising a third semiconductor compound,
wherein the first semiconductor compound and the third semiconductor compound each comprise zinc (Zn),
the second semiconductor compound comprises zinc (Zn), tellurium (Te), and selenium (Se),
the first semiconductor compound and the second semiconductor compound are different from each other,
the second semiconductor compound and the third semiconductor compound are different from each other, and
the first semiconductor compound comprises ZnSe.