Quantum dots and devices including the same
A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
1. A quantum dot comprising a core including a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core and including a second semiconductor nanocrystal material different from the first semiconductor nanocrystal material,
wherein the first semiconductor nanocrystal comprises zinc, tellurium, and selenium, and the second semiconductor nanocrystal comprises ZnSe, ZnS, or a combination thereof,
wherein a quantum efficiency of the quantum dot is between about 80% and about 99%, and wherein a full width at half maximum of the quantum dot is from 18 nm to 30 nm, and wherein in the quantum dot, a mole ratio of tellurium relative to selenium is greater than or equal to about 0.001:1.
2. The quantum dot of claim 1 , wherein the full width at half maximum is about 21 nm to about 30 nm.
3. The quantum dot of claim 1 , wherein a maximum peak emission wavelength of the quantum dot is greater than or equal to about 440 nm and less than or equal to about 465 nm.
4. The quantum dot of claim 1 , wherein a maximum peak emission wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 460 nm.
5. The quantum dot of claim 1 , wherein the semiconductor nanocrystal shell comprises a first layer disposed on the core and a second layer disposed on the first layer.
6. The quantum dot of claim 1 , wherein the semiconductor nanocrystal shell comprises a ZnSe layer.
7. The quantum dot of claim 1 , wherein the semiconductor nanocrystal shell comprises a ZnS layer.
8. The quantum dot of claim 1 , wherein the core has a size of from about 3 nm to less than or equal to about 6 nm, the semiconductor nanocrystal shell comprises a ZnSe layer, and a size of the quantum dot is from 7.8 nm to less than or equal to about 16 nm.
9. The quantum dot of claim 8 , wherein the size of the quantum dot is between 7.8 nm and 12.3 nm.
10. The quantum dot of claim 1 , the core has a size of from about 3 nm to less than or equal to about 6 nm, the semiconductor nanocrystal shell comprises a ZnS layer, and a size of the quantum dot has a size of from 7.8 nm to less than or equal to about 16 nm.
11. The quantum dot of claim 10 , wherein the size of the quantum dot is between 7.8 nm and 12.3 nm.
12. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc, selenium, and sulfur, and in the quantum dot, a mole ratio of sulfur to selenium is less than or equal to about 2.4:1.
13. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc, selenium, and sulfur, and in the quantum dot, a mole ratio of sulfur to selenium is less than or equal to about 1.19:1.
14. The quantum dot of claim 1 , wherein the quantum dot is free of cadmium.
15. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc, selenium, and sulfur, and in the quantum dot,
a mole ratio of selenium with respect to zinc is greater than or equal to about 0.3:1 and less than or equal to about 0.6:1, or
a mole ratio of sulfur with respect to zinc is greater than or equal to about 0.3:1 and less than or equal to about 0.7:1.
16. An electronic device comprising the quantum dot of claim 1 .
17. The quantum dot of claim 1 , wherein the quantum efficiency of the quantum dot is between 84% and about 95%.
18. The electroluminescent device of claim 1 , wherein the quantum efficiency of the quantum dot is between 84% and about 95%.
19. An electroluminescent device comprising
a first electrode and a second electrode, and
a light emitting layer disposed between the first electrode and the second electrode,
wherein the light emitting layer comprises a quantum dot,
wherein the quantum dot comprises a core including a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core and including a second semiconductor nanocrystal material different from the first semiconductor nanocrystal material,
wherein the first semiconductor nanocrystal comprises zinc, tellurium, and selenium, and the second semiconductor nanocrystal comprises ZnSe, ZnS, or a combination thereof,
wherein a quantum efficiency of the quantum dot is between about 80% and about 99%, and wherein a full width at half maximum of the quantum dot is from 18 nm to 30 nm, and wherein in the quantum dot, a mole ratio of tellurium relative to selenium is greater than or equal to about 0.001:1.