Anistropic semiconductor nanoparticles

1. A seeded rod (SR) nanostructure comprising an elongated structure embedding a single seed structure, said single seed structure being selected from the group consisting of an elongated shaped core/shell structure, an elongated shaped core/multishell structure, and a single-material rod element,

wherein:

the thickness of the elongated structure material embedding said seed structure along one axis (tk1, tk2) is at least three times as large as the thickness (tk3, tk4) along the other axis;

one or both of tk3 and tk4 has a thickness between 0.8 and 1.5 nm; and

at least one material of elongated structure and the seed structure is independently selected from the group consisting of a semiconductor material, an insulator material, and a metal oxide material,

wherein

the elongated structure has a long axis and a short axis, the long axis being orthogonal to the short axis and having a length that is longer than a length of the short axis; and

the elongated structure has a first thickness (tk1), a second thickness (tk2), a third thickness (tk3), and a fourth thickness (tk4);

tk1 is a thickness of the elongated structure from a first outer surface of the elongated structure to an outer surface of the seed structure along the long axis;

tk2 is a thickness of the elongated structure from a second outer surface of the elongated structure, which is opposite to the first outer surface, to an outer surface of the seed structure along the long axis;

tk3 is a thickness of the elongated structure from a third outer surface of the elongated structure to an outer surface of the seed structure along the short axis;

tk4 is a thickness of the elongated structure from a fourth outer surface of the elongated structure, which is opposite to the third outer surface, to an outer surface of the seed structure along the short axis;

one or both of tk1 and tk2 is at least three times as large as one or both of tk3 and tk4; and

wherein the peak structure in the XRD spectrum of the seed structure is different from the peak structure in the XRD structure of the elongated structure embedding a single seed structure.

2. The nanostructure according to claim 1 , wherein the material of said elongated structure and the material of said seed structure is selected, independently, amongst semiconductor materials.

3. The nanostructure according to claim 2 , wherein the semiconductor material is a Group III-V material selected from the group consisting of InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe, and any combination thereof.

4. The nanostructure according to claim 1 , wherein the elongated shaped core/shell structure is positioned concentrically or non-concentrically within the elongated structure.

5. The nanostructure according to claim 4 , wherein the elongated shaped core/shell structure has an aspect ratio larger than 1.8.

6. The nanostructure according to claim 1 , wherein:

the elongated structure comprises a first material,

the seed structure being an elongated shaped core/shell structure such that the core of the elongated shaped core/shell structure comprises a second material,

at least one shell of the elongated shaped core/shell structure independently comprises a further material, and

each of said first, second, and further materials is selected such that adjacent materials are different from each other.

7. The nanostructure according to claim 6 , wherein a further material of the at least one shell is selected to have a polymorphic crystal form to enable anisotropic growth thereonto.

8. The nanostructure according to claim 7 , wherein:

the material enabling anisotropic growth has a cubic or a non-cubic crystal structure, and

the non-cubic structure is selected from the group consisting of hexagonal, monoclinic, orthorhombic, rhombohedral, and tetragonal crystal structure.

9. The nanostructure according to claim 6 , in each of the first material, the second material, and the further materials comprises an element of Group IIIB, IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA or VA of block d of the Periodic Table of the Elements.

10. The nanostructure cording to claim 9 , wherein each of the first material, the second material, and the further materials comprises a Group III-V semiconductor material selected from the group consisting of InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe, and any combination thereof.

11. The nanostructure according to claim 1 , wherein the semiconductor is selected from the group consisting of InAs/CdSe/CdS, InP/ZnTe/ZnS, InP/ZnSe/ZnTe, InP/ZnSe/CdS, InP/ZnSe/ZnS, ZnTe/ZnSe/ZnS, ZnSe/ZnTe/ZnS, ZnSeTe/ZnTe/ZnS, CdSe/CdSSe/CdS, CdSe/CdS/CdZnS, CdSe/CdZnSe/CdZnS, and CdSe/CdZnS/ZnS.

12. The nanostructure according to claim 1 , wherein the seed structure is a single-material rod element; and the rod element is positioned concentrically or non-concentrically in the elongated structure.

13. The nanostructure according to claim 12 , wherein the rod element is positioned non-concentrically in the elongated structure.

14. The nanostructure according to claim 12 , wherein:

the rod element is positioned concentrically in the elongated structure; and

a thickness of the elongated structure along one axis, in comparison to the other axis, is substantially different.

15. A process for manufacturing the seeded rod nanostructure according to claim 1 , the process comprising contacting the seed structure in solution with at least one precursor of the material of the elongated structure under conditions permitting elongated growth of said elongated structure material onto a surface of the seed structure to thereby obtain the seeded rod nanostructure.

16. A device comprising the nanostructure according to claim 1 .

17. The nanostructure according to claim 1 , wherein the single seed structure and the elongated structure do not comprise CdSe, CdS, CdTe, CdZnSe, CdSeTe, or ZnCdSe.