Quantum dots and devices including the same
A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
1. A quantum dot comprising:
a core comprising a first semiconductor nanocrystal material comprising zinc, tellurium, and selenium; and
a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the quantum dot does not comprise cadmium, and in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.4:1,
wherein a maximum photoluminescent peak wavelength of the quantum dot is greater than or equal to about 430 nanometers and less than or equal to about 480 nanometers, and
wherein in the quantum dot, a mole ratio of tellurium with respect to selenium is less than or equal to about 0.02:1.
2. The quantum dot of claim 1 , wherein a maximum photoluminescent peak wavelength of the quantum dot is greater than or equal to about 440 nanometers and less than or equal to about 475 nanometers.
3. The quantum dot of claim 1 , wherein the quantum dot has a size of greater than or equal to about 10 nanometers.
4. The quantum dot of claim 1 , wherein in the quantum dot, a mole ratio of tellurium with respect to selenium is less than 0.01:1.
5. The quantum dot of claim 1 , wherein in the quantum dot, the mole ratio of sulfur with respect to selenium is less than or equal to about 2.0:1.
6. The quantum dot of claim 1 , wherein in the quantum dot, the mole ratio of sulfur with respect to selenium is less than or equal to about 1.85:1.
7. The quantum dot of claim 1 , wherein a size of the core is greater than or equal to about 2 nanometers.
8. The quantum dot of claim 1 , wherein the core comprises ZnTe x Se 1-x , wherein x is greater than 0 and less than or equal to about 0.05.
9. The quantum dot of claim 1 , wherein the semiconductor nanocrystal shell has a gradient composition varying in a radial direction from the core toward an outermost surface of the quantum dot.
10. The quantum dot of claim 9 , wherein in the semiconductor nanocrystal shell, an amount of the sulfur increases in a radial direction from the core toward an outermost surface of the quantum dot.
11. The quantum dot of claim 1 , wherein
the semiconductor nanocrystal shell comprises a first layer disposed directly on the core, and a second layer disposed on the first layer, and
the first layer comprises a second semiconductor nanocrystal and the second layer comprises a third semiconductor nanocrystal having a composition different from a composition of the second semiconductor nanocrystal.
12. The quantum dot of claim 11 , wherein the second semiconductor nanocrystal comprises zinc, selenium, and optionally sulfur, and the third semiconductor nanocrystal comprises zinc and sulfur.
13. The quantum dot of claim 11 , wherein the second layer is an outermost layer and the third semiconductor nanocrystal does not comprise selenium.
14. The quantum dot of claim 11 , wherein
the first semiconductor nanocrystal material comprises ZnTeSe,
the second semiconductor nanocrystal material comprises ZnSe, and
the second layer is an outermost layer and the third semiconductor nanocrystal comprises ZnS.
15. The quantum dot of claim 1 , wherein a maximum photoluminescent peak wavelength of the quantum dot is greater than or equal to about 445 nanometers.
16. The quantum dot of claim 1 , wherein the quantum dot has quantum efficiency of greater than or equal to about 70%.
17. The quantum dot of claim 1 , wherein a full width at half maximum of a maximum photoluminescent peak of the quantum dot is less than or equal to about 30 nanometers.
18. The quantum dot of claim 1 , wherein the quantum dot has a size of greater than or equal to about 12 nanometers.
19. An electroluminescent device comprising
a first electrode and a second electrode facing each other, and
a light emitting layer disposed between the first electrode and the second electrode,
wherein the light emitting layer comprises a plurality of quantum dots and the plurality of quantum dots comprises the quantum dot of claim 1 .
20. The electroluminescent device of claim 19 , further comprising a charge auxiliary layer between the first electrode and the light emitting layer, between the second electrode and the light emitting layer, or between the first electrode and the light emitting layer and between the second electrode and the light emitting layer.
21. The electroluminescent device of claim 20 , wherein the charge auxiliary layer comprises a charge injection layer, a charge transport layer, or a combination thereof.
22. The electroluminescent device of claim 19 , wherein a peak external quantum efficiency of the electroluminescent device is greater than or equal to about 4%.
23. The electroluminescent device of claim 19 , wherein the electroluminescent device emits light having an x value of a CIE color space chromaticity diagram that is less than or equal to about 0.2.