Semiconductor nanocrystal particles of core-shell structure having specific bandgap relationship between the core and the shells, production methods thereof, and devices including the same

1. Semiconductor nanocrystal particles comprising:

a core comprising a first semiconductor nanocrystal,

a first shell disposed on the core, the first shell comprising a second semiconductor nanocrystal that has a different composition from the first semiconductor nanocrystal, and

a second shell disposed on the first shell, the second shell comprising a third semiconductor nanocrystal that has a different composition from the second semiconductor nanocrystal,

wherein the first semiconductor nanocrystal comprises a Group II-VI compound comprising zinc;

wherein the second semiconductor nanocrystal comprises zinc and selenium;

wherein the third semiconductor nanocrystal comprises zinc and sulfur;

wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal, and the energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the third semiconductor nanocrystal;

wherein the semiconductor nanocrystal particles do not comprise cadmium;

wherein the semiconductor nanocrystal particles are configured to emit light having a maximum luminescent peak wavelength in a range between about 400 nanometers and 550 nanometers,

wherein the semiconductor nanocrystal particles are configured to exhibit a quantum efficiency of greater than or equal to about 60%, and

wherein an average size of the semiconductor nanocrystal particles is less than or equal to about 50 nanometers.

2. The semiconductor nanocrystal particles of claim 1 , wherein the energy bandgap of the first semiconductor nanocrystal is less than or equal to the energy bandgap of the third semiconductor nanocrystal.

3. The semiconductor nanocrystal particles of claim 1 , wherein the first shell and the second shell comprise a Group II-V1 compound, and

wherein the first semiconductor nanocrystal comprises ZnS, ZnSeS, or a combination thereof.

4. The semiconductor nanocrystal particles of claim 1 , wherein the first semiconductor nanocrystal does not comprise copper.

5. The semiconductor nanocrystal particles of claim 1 , wherein the second semiconductor nanocrystal comprises ZnSe, ZnSeS, ZnSeTe, or a combination thereof.

6. The semiconductor nanocrystal particles of claim 1 , wherein the first shell comprises a plurality of layers and in the plurality of layers, adjacent layers comprise semiconductor nanocrystals of different compositions from each other, and

optionally wherein the first shell comprises a first layer and a second layer and an energy bandgap of the semiconductor nanocrystal in the first layer is less than an energy bandgap of the semiconductor nanocrystal in the second layer.

7. The semiconductor nanocrystal particles of claim 6 , wherein the first layer comprises ZnSeTe and the second layer comprises ZnSe.

8. The semiconductor nanocrystal particles of claim 1 , wherein in the semiconductor nanocrystal particles,

a mole ratio of selenium to zinc is greater than or equal to about 0.2:1 and less than or equal to about 0.8:1,

a mole ratio of sulfur to zinc is greater than or equal to about 0.2:1 and less than or equal to about 0.8:1, and

a mole ratio of sulfur to selenium is greater than or equal to about 0.5:1 and less than or equal to about 2:1.

9. The semiconductor nanocrystal particles of claim 1 , wherein a maximum photoluminescent peak of the semiconductor nanocrystal particles is present in a range from about 440 nanometers to about 500 nanometers or in a range of from about 510 nanometers to about 540 nanometers.

10. The semiconductor nanocrystal particles of claim 1 , wherein in the semiconductor nanocrystal particles,

a mole ratio of a sum of selenium and sulfur with respect to zinc is greater than or equal to about 0.5:1 and less than or equal to about 0.9:1.

11. The semiconductor nanocrystal particles of claim 1 , wherein a maximum photoluminescent peak of the semiconductor nanocrystal particles has a full width at half maximum of less than or equal to about 40 nanometers.

12. The semiconductor nanocrystal particles of claim 1 , wherein a maximum photoluminescent peak of the semiconductor nanocrystal particles has a full width at half maximum of less than or equal to about 30 nanometers.

13. The semiconductor nanocrystal particles of claim 1 , wherein a quantum efficiency of the semiconductor nanocrystal particles is greater than or equal to about 80%.

14. The semiconductor nanocrystal particles of claim 1 , wherein the semiconductor nanocrystal particles are configured to exhibit a full width at half maximum of less than or equal to about 50 nanometers.

15. A light emitting device comprising:

a first electrode and a second electrode facing each other, and

a quantum dot light emitting layer disposed between the first electrode and the second electrode, the quantum dot light emitting layer comprising a plurality of quantum dots, wherein the plurality of quantum dots comprises the semiconductor nanocrystal particle of claim 1 .

16. The light emitting device of claim 15 , wherein the device further comprises a charge auxiliary layer between the first electrode and the quantum dot light emitting layer, between the second electrode and the quantum dot light emitting layer, or between the first electrode and the quantum dot light emitting layer and between the second electrode and the quantum dot light emitting layer.

17. An electronic device comprising the semiconductor nanocrystal particles of claim 1 .

18. The electronic device of claim 17 , wherein the electronic device comprises a semiconductor nanocrystal-polymer composite and the semiconductor nanocrystal particles are included in the semiconductor nanocrystal-polymer composite.

19. The electronic device of claim 18 , wherein the electronic device comprises a light emitting diode or an organic light emitting diode.