Capped co-doped core/shell nanocrystals for visible light emission

1. A core/shell nanocrystal, comprising:

a core;

(i) a shell formed on a surface of the core, wherein the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , or (ii) an undoped shell formed on a surface of the core, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, wherein the metal dopant is Cu + , and an undoped passivation shell formed on a surface of the undoped shell, or (iii) an undoped shell formed on a surface of the core, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, wherein the metal dopant is Cu + ; and

a capping ligand, wherein the capping ligand has the structure:

wherein R 1 is —CH 2 (CH 2 ) 7 CH═CH(CH 2 ) 7 CH 3 or —CH 2 (CH 2 ) 6 CH 3 ; and

wherein the capping ligand is attached to a surface of the shell in (i), or

wherein the capping ligand is attached to a surface of the undoped passivation shell in (ii), or

wherein the capping ligand is attached to a surface of the undoped shell in (iii).

2. The core/shell nanocrystal of claim 1 , wherein the metal dopant and the at least one Group 13 trivalent cation are present in the core in (i), the shell in (i), or both.

3. The core/shell nanocrystal of claim 1 , wherein the core is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; and the shell in (i) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; or the undoped shell in (ii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; or the undoped shell in (iii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof.

4. The core/shell nanocrystal of claim 1 , wherein the core is comprised of ZnSe; and the shell in (i) is comprised of ZnS, or the undoped shell in (ii) is comprised of ZnS, or the undoped shell in (iii) is comprised in ZnS.

5. The core/shell nanocrystal of claim 1 , wherein the at least one Group 13 trivalent cation is selected from Al 3+ , Ga 3+ , In 3+ , and any combinations thereof.

6. The core/shell nanocrystal of claim 1 , wherein the core/shell nanocrystal comprises an undoped shell formed on a surface of the core, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , and an undoped passivation shell formed on a surface of the undoped shell, wherein the capping ligand is attached to the undoped passivation shell.

7. The core/shell nanocrystal of claim 1 , wherein R 1 is —CH 2 (CH 2 ) 7 CH═CH(CH 2 ) 7 CH 3 .

8. The core/shell nanocrystal of claim 1 , wherein the core/shell nanocrystal is a quantum dot.

9. The core/shell nanocrystal of claim 1 , wherein the core/shell nanocrystal comprises an undoped shell formed on a surface of the core, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, wherein the metal dopant is Cu + , and wherein the capping ligand is attached to a surface of the undoped shell.

10. The core/shell nanocrystal of claim 1 , wherein R 1 is —CH 2 (CH 2 ) 6 CH 3 .

11. The core/shell nanocrystal of claim 1 , wherein the undoped passivation shell in (ii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof.

12. The core/shell nanocrystal of claim 1 , wherein the undoped passivation shell in (ii) is comprised of ZnS.

13. A method of making a core/shell nanocrystal, the method comprising:

forming a core;

(i) forming a shell on a surface of the core so as to make the core/shell nanocrystal, wherein the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , or (ii) forming an undoped shell on a surface of the core so as to make the core/shell nanocrystal, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , and forming an undoped passivation shell on a surface of the undoped shell, or (iii) forming an undoped shell on a surface of the core so as to make the core/shell nanocrystal, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + ;

providing a capping ligand, wherein the capping ligand has the structure:

wherein R 1 is —CH 2 (CH 2 ) 7 CH═CH(CH 2 ) 7 CH 3 or —CH 2 (CH 2 ) 6 CH 3 ; and

attaching the capping ligand to a surface of the shell in (i), or

attaching the capping ligand to a surface of the undoped passivation shell in (ii), or

attaching the capping ligand to a surface of the undoped shell in (iii).

14. The method of claim 13 , wherein the metal dopant and the at least one Group 13 trivalent cation are present in the core in (i), the shell in (i), or both.

15. The method of claim 13 , wherein the core is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; and the shell in (i) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; or the undoped shell in (ii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof; or the undoped shell in (iii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof.

16. The method of claim 13 , wherein the core is comprised of ZnSe; and the shell in (i) is comprised of ZnS, or the undoped shell in (ii) is comprised of ZnS, or the undoped shell in (iii) is comprised of ZnS.

17. The method of claim 13 , wherein the at least one Group 13 trivalent cation is selected from Al 3+ , Ga 3+ , In 3+ , and any combinations thereof.

18. The method of claim 13 , wherein the method comprises forming the undoped shell on a surface of the core so as to make the core/shell nanocrystal, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , forming an undoped passivation shell on a surface of the undoped shell, and attaching the capping ligand to the undoped passivation shell.

19. The method of claim 13 , wherein R 1 is —CH 2 (CH 2 ) 7 CH═CH(CH 2 ) 7 CH 3 .

20. The method of claim 13 , wherein the core/shell nanocrystal is a quantum dot.

21. The method of claim 13 , wherein the method comprises forming the undoped shell on a surface of the core so as to make the core/shell nanocrystal, wherein the core of the core/shell nanocrystal is co-doped with a metal dopant and at least one Group 13 trivalent cation, and wherein the metal dopant is Cu + , and attaching the capping ligand to a surface of the undoped shell.

22. The method of claim 13 , wherein R 1 is —CH 2 (CH 2 ) 6 CH 3 .

23. The method of claim 13 , wherein the undoped passivation shell in (ii) is comprised of ZnSe, ZnS, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, or InAs, and any mixtures thereof.

24. The method of claim 13 , wherein the undoped passivation shell in (ii) is comprised of ZnS.