Quantum dots, a composition or composite including the same, and an electronic device including the same
A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Abs first −Abs valley )/Abs first =VD.
1. A cadmium free quantum dot comprising
a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core,
wherein the quantum dot does not comprise cadmium,
the quantum dot comprises indium and zinc,
the quantum dot has a maximum photoluminescence peak in a red light wavelength region,
a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 40 nanometers,
an ultraviolet-visible absorption spectrum of the quantum dot comprises a valley between about 450 nanometers and a first absorption peak wavelength, and
a valley depth defined by the following equation is greater than or equal to about 0.2:
(Abs first −Abs valley )/Abs first =valley depth
wherein, Abs first is an absorption intensity at the first absorption peak wavelength and Abs valley is an absorption intensity at a lowest point of the valley.
2. The cadmium free quantum dot of claim 1 , wherein the red light wavelength region is greater than or equal to about 600 nanometers and less than or equal to about 650 nanometers.
3. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 39 nanometers.
4. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 38 nanometers.
5. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 37 nanometers.
6. The cadmium free quantum dot of claim 1 , wherein a half width at half maximum of the first absorption peak is less than or equal to about 25 nanometers.
7. The cadmium free quantum dot of claim 1 , wherein a quantum efficiency of the cadmium free quantum dot is greater than or equal to about 80%.
8. The cadmium free quantum dot of claim 1 , wherein a quantum efficiency of the cadmium free quantum dot is greater than or equal to about 85%.
9. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot has a mole ratio of the zinc to the indium of greater than or equal to about 10:1 and less than or equal to about 40:1, and a size of greater than or equal to about 6 nanometers.
10. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot has a mole ratio of the zinc to the indium of greater than or equal to about 12:1 and less than or equal to about 30:1 and a size of greater than or equal to about 7 nanometers.
11. The cadmium free quantum dot of claim 1 , wherein the semiconductor nanocrystal core comprises a Group III-V compound.
12. The cadmium free quantum dot of claim 1 , wherein the semiconductor nanocrystal core does not comprise zinc.
13. The cadmium free quantum dot of claim 1 , wherein the semiconductor nanocrystal core has a size of greater than or equal to about 2.5 nanometers.
14. The cadmium free quantum dot of claim 1 , wherein the shell comprises a first semiconductor nanocrystal shell comprising zinc and selenium and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur.
15. The cadmium free quantum dot of claim 1 , wherein the first semiconductor nanocrystal shell is disposed directly on the surface of the semiconductor nanocrystal core and the first semiconductor nanocrystal shell does not comprise sulfur.
16. The cadmium free quantum dot of claim 14 , wherein the first semiconductor nanocrystal shell has a thickness of greater than or equal to about 3 monolayers and less than or equal to about 10 monolayers.
17. The cadmium free quantum dot of claim 14 , wherein the second semiconductor nanocrystal shell is an outermost layer of the quantum dot.
18. The cadmium free quantum dot of claim 14 , wherein the second semiconductor nanocrystal shell is disposed directly on the first semiconductor nanocrystal shell.
19. The cadmium free quantum dot of claim 14 , wherein the second semiconductor nanocrystal shell comprises ZnSeS, ZnS, or a combination thereof.
20. The cadmium free quantum dot of claim 14 , wherein in the quantum dot, a ratio of a total mole amount of sulfur and selenium to a mole amount of indium is greater than or equal to about 3:1 and less than or equal to about 40:1.
21. The cadmium free quantum dot of claim 1 , wherein a thickness of the semiconductor nanocrystal shell is greater than or equal to about 2 nanometers.
22. A quantum dot polymer composite comprising
a polymer matrix; and
a plurality of quantum dots dispersed in the polymer matrix,
wherein the plurality of quantum dots comprises the cadmium free quantum dots of claim 1 .
23. The quantum dot polymer composite of claim 22 , wherein the polymer matrix comprises a cross-linked polymer, a binder polymer comprising a carboxylic acid group, or a combination thereof.
24. The quantum dot polymer composite of claim 23 , wherein the cross-linked polymer comprises a polymerization product of a photopolymerizable monomer comprising a carbon-carbon double bond, polymerization product of the photopolymerizable monomer and a multiple thiol compound having at least two thiol groups, or a combination thereof.
25. The quantum dot polymer composite of claim 22 , wherein the quantum dot-polymer composite comprises a metal oxide particulate dispersed in the polymer matrix.
26. A display device comprising
a light source and
a light emitting element,
wherein the light emitting element comprises the quantum dot-polymer composite of claim 22 , and
the light source is configured to provide the light emitting element with incident light.
27. The display device of claim 26 , wherein the incident light has a photoluminescence peak wavelength of about 440 nanometers to about 460 nanometers.
28. The display device of claim 26 , wherein the light emitting element comprises a sheet of the quantum dot polymer composite.
29. The display device of claim 26 , wherein the light emitting element is a stacked structure comprising a substrate and a light emitting layer disposed on the substrate,
wherein the light emitting layer comprises a pattern of the quantum dot polymer composite, and
the pattern comprises at least one repeating section to emit light at a predetermined wavelength.
30. The display device of claim 29 , wherein the display device is configured to have color reproducibility of greater than or equal to about 80% measured in accordance with a BT2020 standard.