IMAGE SENSORS WITH DIFFRACTIVE LENSES IN A SEMICONDUCTOR SUBSTRATE
An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area formed in a semiconductor substrate that is covered by a respective microlens that focuses light onto the photosensitive area. Each imaging pixel may also include a diffractive lens formed in the semiconductor substrate. The diffractive lens may spread light to increase the average path length of incident light within the photosensitive area and increase efficiency of the pixel. An additional diffractive lens may be formed over the semiconductor substrate to focus light onto the diffractive lens and further improve efficiency. Multiple diffractive lenses may be formed in the semiconductor substrate of a single imaging pixel. The diffractive lenses may be multipart diffractive lenses.
1 . An image sensor comprising:
a semiconductor substrate having a first refractive index;
a photodiode formed in the semiconductor substrate;
a microlens formed over the photodiode, wherein the microlens has a curved upper surface; and
a diffractive lens formed in the semiconductor substrate over the photodiode, wherein the diffractive lens has a second refractive index that is less than the first refractive index; and
an additional diffractive lens formed over the semiconductor substrate, wherein the additional diffractive lens is interposed between the diffractive lens and the curved upper surface.
2 . The image sensor defined in claim 1 , wherein the semiconductor substrate has a front surface and a back surface and wherein the back surface is interposed between the front surface and the microlens.
3 . The image sensor defined in claim 2 , wherein the diffractive lens is formed in a trench in the back surface of the semiconductor substrate.
4 . The image sensor defined in claim 3 , wherein the diffractive lens is contained within the trench and does not extend past the back surface of the semiconductor substrate.
5 . The image sensor defined in claim 1 , wherein the diffractive lens is completely laterally surrounded by the semiconductor substrate.
6 . The image sensor defined in claim 1 , wherein the diffractive lens is a first diffractive lens, the image sensor further comprising:
at least a second diffractive lens formed in the semiconductor substrate over the photodiode.
7 . The image sensor defined in claim 1 , wherein the diffractive lens comprises a material selected from the group consisting of: silicon dioxide and silicon nitride.
8 . The image sensor defined in claim 1 , wherein the diffractive lens is a multipart diffractive lens comprising a first portion having the second refractive index and a second portion having a third refractive index.
9 . The image sensor defined in claim 8 , wherein the first portion is an edge portion and the second portion is a center portion and wherein the third refractive index is less than the second refractive index.
10 . (canceled)
11 . The image sensor defined in claim 1 , wherein the additional diffractive lens is surrounded by a dielectric material having a third refractive index, wherein the additional diffractive lens has a fourth refractive index, and wherein the third refractive index is less than the fourth refractive index.
12 . The image sensor defined in claim 11 , wherein the additional diffractive lens is a multipart diffractive lens having an edge portion with the fourth refractive index and a center portion with a fifth refractive index.
13 . The image sensor defined in claim 1 , wherein the diffractive lens is a first multipart diffractive lens and the additional diffractive lens is a second multipart diffractive lens.
14 . An image sensor comprising a plurality of imaging pixels, each imaging pixel comprising:
a photodiode formed in a semiconductor substrate;
isolation structures in the semiconductor substrate that laterally surround the photodiode;
a microlens formed over the photodiode, wherein the microlens has a curved upper surface;
a first diffractive lens formed in the semiconductor substrate; and
a second diffractive lens formed over the semiconductor substrate, wherein the second diffractive lens is interposed between the curved upper surface of the microlens and the first diffractive lens.
15 . The image sensor defined in claim 14 , wherein the first diffractive lens has a first refractive index, wherein the semiconductor substrate has a second refractive index, and wherein the second refractive index is greater than the first refractive index.
16 . The image sensor defined in claim 15 , wherein the second diffractive lens has a third refractive index, wherein the second diffractive lens is surrounded by a material having a fourth refractive index, and wherein the fourth refractive index is less than the third refractive index.
17 . The image sensor defined in claim 14 , wherein the first diffractive lens is completely laterally surrounded by the semiconductor substrate.
18 . The image sensor defined in claim 14 , further comprising:
a passivation layer formed between the first and second diffractive lenses.
19 - 21 . (canceled)
22 . An image sensor comprising:
a semiconductor substrate;
a photodiode formed in the semiconductor substrate;
a microlens formed over the photodiode, wherein the microlens has a curved upper surface;
a passivation layer on the semiconductor substrate that is interposed between the semiconductor substrate and the microlens; and
a diffractive lens formed over the photodiode, wherein the diffractive lens is interposed between the passivation layer and the curved upper surface of the microlens.
23 . The image sensor defined in claim 22 , wherein the diffractive lens is surrounded by material used to form the microlens, wherein the diffractive lens has a first refractive index, and wherein the material used to form the microlens has a second refractive index that is less than the first refractive index.
24 . The image sensor defined in claim 23 , further comprising:
an additional diffractive lens formed in the semiconductor substrate over the photodiode, wherein the additional diffractive lens has a third refractive index and wherein the semiconductor substrate has a fourth refractive index that is greater than the third refractive index.