Light-emitting device
A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.
1. A light-emitting device, comprising:
a light-emitting stack;
an electrode on the light-emitting stack and comprising a main part and multiple extensions extended from the main part;
a semiconductor structure on the light-emitting stack; and
a contact layer between the light-emitting stack and the multiple extensions, and being devoid of locating between the light-emitting stack and the main part of the electrode.
2. The light-emitting device according to claim 1 , wherein the semiconductor structure comprises Al.
3. The light-emitting device according to claim 1 , wherein the semiconductor structure directly contacts the main part of the electrode.
4. The light-emitting device according to claim 1 , wherein the contact layer has an impurity concentration greater than 10 18 /cm 3 .
5. The light-emitting device according to claim 1 , wherein the contact layer comprises GaAs, AlGaAs, InGaP, GaP or AlGaInP.
6. The light-emitting device according to claim 1 , further comprising a substrate and a bonding layer between the substrate and the light-emitting stack.
7. The light-emitting device according to claim 6 , further comprising a conductive reflector between the bonding layer and the light-emitting stack.
8. The light-emitting device according to claim 6 , wherein from a cross section view of the light-emitting device, the bonding layer has a first width and the light-emitting stack has a second width less than the first width.
9. A light-emitting device, comprising:
a substrate;
a light-emitting stack on the substrate;
an electrode on the light-emitting stack;
a semiconductor layer on the light-emitting stack and comprising a roughened surface and an upper surface, wherein the roughened surface is exposed from the electrode and the upper surface is covered by the electrode;
a bonding layer between the substrate and the light-emitting stack; and
a conductive oxide layer located between the bonding layer and the light-emitting stack,
wherein the upper surface is farther from the light-emitting stack than the roughened surface.
10. The light-emitting device according to claim 9 , wherein the upper surface has a roughness smaller than that of the roughened surface.
11. The light-emitting device according to claim 9 , wherein the semiconductor layer is a n-type semiconductor layer.
12. The light-emitting device according to claim 9 , wherein from a cross section view of the light-emitting device, the bonding layer has a first width and the light-emitting stack has a second width less than the first width.
13. The light-emitting device according to claim 9 , wherein the bonding layer has a thickness between 400 nm and 5000 nm.
14. The light-emitting device according to claim 9 , wherein from a cross section view of the light-emitting device, the conductive oxide layer has a third width and the light-emitting stack has a second width less than the third width.
15. A light-emitting device, comprising:
a light-emitting stack;
an electrode on the light-emitting stack; and
a semiconductor structure on the light-emitting stack and comprising:
a first portion having an unroughened surface; and
a second portion having a roughed surface and comprising a Group III element with a first atomic percentage decreasing along a direction from the electrode to the light-emitting stack.
16. The light-emitting device according to claim 15 , wherein the fir portion comprises the Group III element with a second atomic percentage decreasing along a direction from the electrode to the light-emitting stack.
17. The light-emitting device according to claim 15 , wherein the electrode merely covers the first portion.
18. The light-emitting device according to claim 15 , wherein the Group III element comprise Al.
19. The light-emitting device according to claim 15 , wherein each of the first portion and the second portion comprises a first sub-layer and a second sub-layer, the second sub-layer of the first portion has a first thickness and the second sub-layer of the second portion has a second thickness less than the first thickness.
20. The light-emitting device according to claim 19 , wherein the first sub-layer of the second portion comprises the Group III element with a first content and the second sub-layer of the second portion comprises the Group III element with a second content greater than the first content.