Heating of a substrate for epoxy deposition
A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25° C. and 60° C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.
1. Method for bonding a semiconductor die onto a substrate using epoxy, comprising the steps of:
supporting the substrate on a heating platform;
conducting preheating of the substrate with the heating platform to a temperature within a temperature range of between 25° C. and 60° C.;
after preheating the substrate to the said temperature and while maintaining the substrate within the said temperature range, using an epoxy dispenser to deposit an epoxy dot onto the substrate, wherein the preheated substrate causes a viscosity of the epoxy deposited to be reduced; and thereafter
placing the semiconductor die onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.
2. Method as claimed in claim 1 , wherein the heating platform comprises a vacuum chuck for supporting the substrate, and the vacuum chuck further incorporates a heater for heating the substrate.
3. Method as claimed in claim 2 , wherein the heater comprises a plurality of heater rods embedded in the vacuum chuck.
4. Method as claimed in claim 1 , wherein the substrate is heated by the heating platform to a temperature of between 35° C. and 50° C.
5. Method as claimed in claim 1 , wherein the epoxy dot heated by the preheated substrate results in enhanced wetting of the epoxy on a surface of a bond pad of the substrate where the epoxy is deposited.
6. Method as claimed in claim 1 , wherein the semiconductor die is placed onto the epoxy dot before the reduced viscosity of the epoxy due to heating adversely influences the bonding of the semiconductor die by the pick head.
7. Method as claimed in claim 1 , wherein the epoxy dot is deposited onto the preheated substrate for not more than 10 seconds before the semiconductor die is placed onto the epoxy dot.
8. Method as claimed in claim 7 , wherein the epoxy dot is deposited onto the preheated substrate for 0.1 to 10 seconds before the semiconductor die is placed onto the epoxy dot.
9. Method as claimed in claim 7 , wherein a time taken to dispense an epoxy dot on the substrate and completing bonding of a semiconductor die on the substrate is between 0.1 and 100 seconds.
10. Method as claimed in claim 1 , wherein the epoxy dispenser comprises a transfer pin, and the step of depositing the epoxy dot onto the substrate comprises the steps of collecting a volume of epoxy from an epoxy reservoir with the transfer pin, and then transferring and depositing a portion of the volume of epoxy onto the substrate with the transfer pin.
11. Method as claimed in claim 1 , wherein a temperature variation on a whole of the substrate is controlled to within a margin of plus/minus 5° C.
12. Method as claimed in claim 1 , wherein the epoxy comprises silver epoxy.
13. Apparatus for bonding a semiconductor die onto a substrate using epoxy, the apparatus comprising:
a heating platform for supporting the substrate, the heating platform being operative to preheat the substrate to a temperature within a temperature range of between 25° C. and 60° C.;
an epoxy dispenser for depositing an epoxy dot onto the substrate which has been preheated to the said temperature, wherein the preheated substrate causes a viscosity of the epoxy deposited to be reduced when the substrate is maintained within the said temperature range; and
a pick head for placing the semiconductor die onto the epoxy dot to thereby bond the semiconductor die onto the substrate.