Filter devices having reduced spurious emissions from lamb waves
View Patent ↗A filter device including a first filter having a first passband, and a second filter having a second passband, the first and second filters each being connected between a common contact and a respective signal contact, and the filter device configured to reduce spurious emissions generated in one filter due to propagation of Lamb waves in the other filter. In one example the first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the piezoelectric substrate covering the SAW filter and the SAW resonator. The dielectric film has a first thickness over the SAW filter and a second, lesser, thickness over the SAW resonator, a difference between the first and second thicknesses being selected to suppress spurious emissions in the second passband generated by propagation of a Lamb wave in the SAW filter.
1. A filter device comprising:
a common contact, a first signal contact, and a second signal contact;
a first filter connected between the common contact and the first signal contact and having a first passband, the first filter including a first piezoelectric substrate, a surface acoustic wave (SAW) filter formed on a surface of the first piezoelectric substrate, a first SAW resonator formed on the surface of the first piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the surface of the piezoelectric substrate and covering the SAW filter and the first SAW resonator, the dielectric film having a first thickness in a first region corresponding to the SAW filter and a second thickness in a second region corresponding to the first SAW resonator, the first thickness being greater than the second thickness; and
a second filter connected between the common contact and the second signal contact and having a second passband different from the first passband, a difference between the first thickness and the second thickness of the dielectric film being selected to suppress spurious emissions in the second passband generated by propagation of a Lamb wave in the first region of the dielectric film.
2. The filter device of claim 1 wherein a center frequency of the second passband is in a range of 1.2 to 1.4 times greater than a center frequency of the first passband.
3. The filter device of claim 2 wherein the center frequency of the second passband is in a range of 1.25 to 1.3 times greater than the center frequency of the first passband.
4. The filter device of claim 1 wherein the first SAW resonator and the SAW filter together form a ladder-type filter, the SAW filter including a plurality of series SAW resonators connected in series between the first signal contact and the first SAW resonator and a plurality of parallel SAW resonators connected to at least one ground contact.
5. The filter device of claim 1 wherein the dielectric film is made of silicon dioxide.
6. The filter device of claim 1 wherein the second thickness of the dielectric film in the second region corresponding to the first SAW resonator is configured to be less than 26% when normalized with a wavelength of an excited surface acoustic wave in the first filter.
7. The filter device of claim 6 wherein the first thickness of the dielectric film in the first region corresponding to the SAW filter is configured to be greater than 29% when normalized with the wavelength of the excited surface acoustic wave in the first filter.
8. The filter device of claim 1 wherein the first piezoelectric substrate is made of one of lithium niobate and lithium tantalate.
9. The filter device of claim 1 wherein the second filter includes a plurality of acoustic wave elements disposed on the first piezoelectric substrate.
10. The filter device of claim 1 wherein the second filter includes a second piezoelectric substrate and a plurality of acoustic wave elements disposed on the second piezoelectric substrate.
11. The filter device of claim 10 wherein the plurality of acoustic wave elements includes at least one of surface acoustic wave elements, bulk acoustic wave elements, and thin-film bulk acoustic resonators.
12. The filter device of claim 10 wherein the first piezoelectric substrate is made of a first material and the second piezoelectric substrate is made of a second material different from the first material.
13. The filter device of claim 1 wherein an antiresonant frequency of the first SAW resonator is higher in frequency than an attenuation pole located closest to a higher-frequency side of the first passband.
14. A filter device comprising:
a common contact, a first signal contact, and a second signal contact;
a first filter connected between the common contact and the first signal contact and having a first passband, the first filter including a first piezoelectric substrate, a surface acoustic wave (SAW) filter formed on a surface of the first piezoelectric substrate and configured to excite a surface acoustic wave, a first SAW resonator formed on the surface of the first piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the surface of the piezoelectric substrate and covering the SAW filter and SAW resonator, the dielectric film having a first thickness in a first region corresponding to the SAW filter and a second thickness in a second region corresponding to the SAW resonator, the first thickness being be greater than 29% when normalized with a wavelength of the surface acoustic wave, and the second thickness being less than 26% when normalized with the wavelength of the surface acoustic wave; and
a second filter connected between the common contact and the second signal contact and having a second passband different from the first passband.
15. The filter device of claim 14 wherein a center frequency of the second passband is in a range of 1.2 to 1.4 times greater than a center frequency of the first passband.
16. The filter device of claim 15 wherein the center frequency of the second passband is in a range of 1.25 to 1.3 times greater than the center frequency of the first passband.
17. The filter device of claim 14 wherein the dielectric film is made of silicon dioxide.
18. The filter device of claim 14 wherein the second filter includes a plurality of acoustic wave elements disposed on the first piezoelectric substrate.
19. The filter device of claim 14 wherein the second filter includes a second piezoelectric substrate and a plurality of acoustic wave elements disposed on the second piezoelectric substrate.
20. The filter device of claim 19 wherein the first piezoelectric substrate is made of a first material and the second piezoelectric substrate is made of a second material different from the first material.