Selector Device Incorporating Conductive Clusters for Memory Applications
The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.
1 . A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a volatile switching layer interposed therebetween, said first electrode having a composition comprising a metal element and said second electrode having a composition comprising said metal element and aluminum element.
2 . The memory device of claim 1 , wherein said metal element is silver, copper, or nickel.
3 . The memory device of claim 1 , wherein said composition of said first electrode further comprises aluminum element.
4 . The memory device of claim 1 , wherein said second electrode is deposited onto said volatile switching layer during fabrication.
5 . The memory device of claim 1 , wherein said volatile switching layer is made of an insulator.
6 . The memory device of claim 5 , wherein said insulator is hafnium oxide, zirconium oxide, titanium oxide, or any combination thereof.
7 . The memory device of claim 5 , wherein said insulator is tantalum oxide, niobium oxide, magnesium oxide, aluminum oxide, or any combination thereof.
8 . The memory device of claim 1 , wherein said volatile switching layer has a composite structure comprising a plurality of conductive particles embedded in an insulating matrix.
9 . The memory device of claim 8 , wherein said insulating matrix is made of hafnium oxide, zirconium oxide, titanium oxide, or any combination thereof.
10 . The memory device of claim 8 , wherein said insulating matrix is made of tantalum oxide, niobium oxide, magnesium oxide, aluminum oxide, or any combination thereof.
11 . The memory device of claim 8 , wherein said plurality of conductive particles are made of silver, copper, nickel, or any combinations thereof.
12 . The memory device of claim 8 , wherein said plurality of conductive particles are made of zinc, titanium, tungsten, arsenic, or any combinations thereof.
13 . The memory device of claim 1 , wherein said volatile switching layer has a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers.
14 . The memory device of claim 13 , wherein said two or more insulating layers are made of hafnium oxide, zirconium oxide, titanium oxide, or any combination thereof.
15 . The memory device of claim 13 , wherein said two or more insulating layers are made of tantalum oxide, niobium oxide, magnesium oxide, aluminum oxide, or any combination thereof.
16 . The memory device of claim 13 , wherein said one or more conductive layers are made of silver, copper, nickel, or any combinations thereof.
17 . The memory device of claim 13 , wherein said one or more conductive layers are made of zinc, titanium, tungsten, arsenic, or any combinations thereof.
18 . The memory device of claim 1 , wherein each of said memory cells further includes an intermediate electrode interposed between said memory element and said two-terminal selector element.
19 . The memory device of claim 1 , wherein said memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween.
20 . The memory device of claim 19 , wherein said magnetic free layer has a variable magnetization direction substantially perpendicular to a layer plane thereof, said magnetic reference layer has a fixed magnetization direction substantially perpendicular to a layer plane thereof.