Patent Assignment
Reel/Frame 051930/0396
Security Interest
Recorded: 2020-02-13
Pages: 32
Assignor
AVALANCHE TECHNOLOGY, INC.
Executed: 2020-02-12
Assignee
STRUCTURED ALPHA LP
65 QUEEN STREET WEST, SUITE 2400, TORONTO, ONTARIO, M5H 2M8, CANADA
Covered Properties
(281)
Magnetic Memory Cell Including Two-Terminal Selector Device
Selector Device Having Asymmetric Conductance for Memory Applications
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (Mtj) and a Method of Manufacturing Same
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
Patent:
47,975 →
Application:
16/100,649 →
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Method of Implementing Magnetic Random Access Memory (MRAM) for Mobile System-on-Chip Boot
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Multilayered Seed Structure for Magnetic Memory Element Including a CoFeB Seed Layer
Selector Device Incorporating Conductive Clusters for Memory Applications
Application:
16/251,008 →
Publication:
US US20190172871A1
Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)
Application:
16/550,103 →
Publication:
US US20190378552A1
Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the Same
Magnetic Memory and Method for Using the Same
Fast Programming of Magnetic Random Access Memory (MRAM)
Three-Dimensional Nonvolatile Memory
Patent:
10,818,731 →
Application:
16/446,532 →
Power-Efficient Programming of Magnetic Memory
Current-Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Current-Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
Low Cost Multi-State Magnetic Memory
High Capacity Low Cost Multi-State Magnetic Memory
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Low-Cost Non-Volatile Flash-Ram Memory
Magnetic Tunnel Junction (Mtj) Formation with Two-Step Process
Patent:
8,148,174 →
Application:
13/100,048 →
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Low-Crystallization Temperature Mtj for Spin-Transfer Torque Magnetic Random Access Memory (Sttmram)
Patent:
8,169,821 →
Application:
12/907,913 →
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (Sttmram) Cell
Embedded Magnetic Random Access Memory (Mram)
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Magnetic Tunnel Junction (Mtj) Formation Using Multiple Etching Processes
Low Cost Multi-State Magnetic Memory
Magnetic Memory Sensing Circuit
Method and Apparatus for Programming a Magnetic Tunnel Junction (Mtj)
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) with Laminated Free Layer
Patent:
8,374,025 →
Application:
12/779,881 →
Differntial Magnetic Random Access Memory (Mram)
Patent:
8,385,108 →
Application:
13/429,293 →
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
High Capacity Low Cost Multi-State Magnetic Memory
Low-Cost Non-Volatile Flash-Ram Memory
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Low-Crystallization Temperature Mtj for Spin-Transfer Torque Magnetic Random Access Memory (Sttmram)
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Low-Cost Non-Volatile Flash-Ram Memory
Low Cost Multi-State Magnetic Memory
Embedded Magnetic Random Access Memory (MRAM)
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Non-Volatile Magnetic Memory Element with Graded Layer
Magnetic Random Access Memory with Switching Assist Layer
Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Low Resistance High-Tmr Magnetic Tunnel Junction and Process for Fabrication Thereof
Spin-Transfer Torque Magnetic Random Access Memory with Multi-layered Storage Layer
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,526,234 →
Application:
13/708,582 →
Method for Manufacturing Non-Volatile Magnetic Memory
Mram Etching Processes
Magnetic Random Access Memory (Mram) Manufacturing Process for a Small Magnetic Tunnel Junction (Mtj) Design with a Low Programming Current Requirement
Magnetic Random Access Memory (MRAM) Manufacturing Process for a Small Magnetic Tunnel Junction (MTJ) Design with a Low Programming Current Requirement
Method of Reading from and Writing to Magnetic Random Access Memory (Mram)
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,547,745 →
Application:
13/679,739 →
Method for Magnetic Screening of Arrays of Magnetic Memories
Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Magnetic Random Access Memory with Field Compensating Layer and Multi-Level Cell
Mram Fabrication Method with Sidewall Cleaning
Resistive Memory Device Having Vertical Transistors and Method for Making the Same
Spin-Transfer Torque Magnetic Random Access Memory Having Magnetic Tunnel Junction with Perpendicular Magnetic Anisotropy
Non-Volatile Block Storage Module Using Magnetic Random Access Memory (Mram)
Patent:
8,595,427 →
Application:
13/791,452 →
Magnetic Random Access Memory with Field Compensating Layer and Multi-Level Cell
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) Device with Shared Transistor and Minimal Written Data Disturbance
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) Using a Synthetic Free Layer
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
Method and Apparatus for Measuring Magnetic Parameters of Magnetic Thin Film Structures
Embedded Magnetic Random Access Memory (Mram)
Method of Sensing Data of a Magnetic Random Access Memories (Mram)
Method for Reducing Effective Raw Bit Error Rate in Multi-Level Cell Nand Flash Memor
Patent:
8,656,255 →
Application:
13/840,327 →
Multi-Port Magnetic Random Access Memory (Mram)
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,670,276 →
Application:
13/945,362 →
Persistent Block Storage Attached to Memory Bus
Patent:
8,677,097 →
Application:
13/654,361 →
Flash Memory With Nano-Pillar Charge Trap
Patent:
8,687,418 →
Application:
12/623,369 →
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
Patent:
8,693,240 →
Application:
13/688,066 →
Memory Device Including Transistor Array with Shared Plate Channel and Method for Making the Same
MRAM with sidewall protection and method of fabrication
Non-Volatile Flash-Ram Memory with Magnetic Memory
Management of Memory Array with Magnetic Random Access Memory (Mram)
Patent:
8,711,631 →
Application:
13/902,650 →
Non-Volatile Storage Module Having Magnetic Random Access Memory (Mram) with a Buffer Window
Patent:
8,719,492 →
Application:
13/958,207 →
Access Transistor with a Buried Gate
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (STTMRAM) Cell
A Magnetic Memory with a Domain Wall
Method for Reading and Writing Multi-Level Cells
Patent:
8,724,380 →
Application:
14/079,518 →
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
High Capacity Low Cost Multi-State Magnetic Memory
Embedded Magnetic Random Access Memory (Mram)
Memory with on-Chip Error Correction
Emulation of Static Random Access Memory (Sram) by Magnetic Random Access Memory (Mram)
Stt-Mram Mtj Manufacturing Method with in-Situ Annealing
Magnetic Memory Write Circuitry
Spin Transfer Torque Magnetic Random Access Memory (Sttmram) Having Graded Synthetic Free Layer
Mtj Mram with Stud Patterning
Spin Transfer Torque Magnetic Random Access Memory (Sttmram) Having Graded Synthetic Free Layer
Fast Programming of Magnetic Random Access Memory (Mram)
Patent:
8,792,269 →
Application:
13/842,747 →
Mram with Sidewall Protection and Method of Fabrication
Method for Manufacturing High Density Non-Volatile Magnetic Memory
Access Transistor with a Buried Gate
Multi Root Shared Peripheral Component Interconnect Express (Pcie) End Point
Patent:
8,806,098 →
Application:
13/856,395 →
Method for Bit-Error Rate Testing of Resistance-based RAM Cells Using a Reflected Signal
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Method and Apparatus for Sensing the State of a Magnetic Tunnel Junction (Mtj)
Bottom-Type Perpendicular Magnetic Tunnel Junction (Pmtj) Element with Thermally Stable Amorphous Blocking Layers
Patent:
8,836,000 →
Application:
13/891,833 →
Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer
Automatic Detection of Non-Compliant Content in User Electronic Content Transmission
Application:
13/052,676 →
Publication:
US US20120246719A1
High Speed Stt-Mram with Orthogonal Pinned Layer
Multi-Port Magnetic Random Access Memory (Mram)
Memory Device Having Stitched Arrays of 4 F² Memory Cells
Method and Apparatus for Programming a Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) Array
Redeposition Control in MRAM Fabrication Process
Magnetoresistive Logic Cell and Method of Use
Mapping of Random Defects in a Memory Device
Memory Device Having Vertical Selection Transistors with Shared Channel Structure and Method for Making the Same
Magnetoresistive Logic Cell and Method of Use
Magnetoresistive Layer Structure with Voltage-Induced Switching and Logic Cell Application
Method of Sensing Data in Magnetic Random Access Memory with Overlap of High and Low Resistance Distributions
Patent:
8,891,326 →
Application:
14/024,580 →
Storage System Employing MRAM and Physically Addressed Solid State Disk
Multi-State Spin-Torque Transfer Magnetic Random Access Memory
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
Method for Reducing Effective Raw Bit Error Rate in Multi-Level Cell NAND Flash Memory
Method for Magnetic Screening of Arrays of Magnetic Memories
High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
HOST-MANAGED Logical MASS STORAGE DEVICE USING MAGNETIC RANDOM ACCESS MEMORY (MRAM)
Storage Processor Managing Solid State Disk Array
Patent:
8,954,657 →
Application:
14/040,280 →
Method of Lun Management in a Solid State Disk Array
Patent:
8,954,658 →
Application:
14/090,910 →
Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
Method of Manufacturing Magnetic Tunnel Junction Memory Element
Patent:
8,962,349 →
Application:
14/089,209 →
Storage Processor Managing Nvme Logically Addressed Solid State Disk Array
Patent:
8,966,164 →
Application:
14/050,274 →
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device
Emulation of Static Random Access Memory (Sram) by Magnetic Random Access Memory (Mram)
Mram Etching Processes
Method for Forming Mtj Memory Element
Patent:
8,975,089 →
Application:
14/082,400 →
Method for Manufacturing Non-Volatile Magnetic Memory Cell in Two Facilities
Magnetic Random Access Memory with Switchable Switching Assist Layer
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Perpendicular Laminated Free layer
Patent:
8,982,616 →
Application:
13/685,650 →
Mobile Device Using Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
Physically Addressed Solid State Disk Employing Magnetic Random Access Memory (MRAM)
Storage Processor Managing Solid State Disk Array
Mram with Sidewall Protection and Method of Fabrication
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Perpendicular Sttmram Device with Balanced Reference Layer
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Perpendicular Laminated Free Layer
Mtj Manufacturing Method Utilizing in-Situ Annealing and Etch Back
High Density Resistive Memory Having a Vertical Dual Channel Transistor
Memory Device Having Stitched Arrays of 4 F² Memory Celly
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device
Storage System Employing Mram and Array of Solid State Disks with Integrated Switch
Computer System with Physically-Addressable Solid State Disk (Ssd) and a Method of Addressing the Same
High Capacity Low Cost Multi-State Magnetic Memory
Steering Control System for Vehicle and Steering Control Method for Vehicle
Persistent Block Storage Attached to Memory Bus
Method and Apparatus for Writing to a Magnetic Tunnel Junction (Mtj) by Applying Incrementally Increasing Voltage Level
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
Shields for Magnetic Memory Chip Packages
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
Fabrication Method for High-Density Mram Using Thin Hard Mask
Hybrid Non-Volatile Memory Device
Vialess Memory Structure and Method of Manufacturing Same
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Memory with on-Chip Error Correction
Non-Volatile Storage Module Having Magnetic Random Access Memory (Mram) with a Buffer Window
Multi-Level Cells and Method for Using the Same
Three-Dimensional Flash Memory Device
Patent:
9,112,051 →
Application:
14/451,252 →
Apparatus for Initializing Perpendicular Mram Device
Semiconductor Memory Device Having Increased Separation Between Memory Elements
Patent:
9,123,575 →
Application:
14/336,640 →
Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Flash Subsystem Organized into Pairs of Upper and Lower Page Locations
Magnetic Random Access Memory with Multiple Free Layers
Patent:
9,166,143 →
Application:
14/304,775 →
Electric Field Assisted Mram and Method for Using the Same
Mtj Stack and Bottom Electrode Patterning Process with Ion Beam Etching Using a Single Mask
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
Memory Device Having Stitched Arrays of 4 F² Memory Celln
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram) in a Mobile Device
High Capaciy Low Cost Multi-State Magnetic Memory
Mapping of Random Defects in a Memory Device
A SHARED PERIPHERAL COMPONENT INTERCONNECT EXPRESS (PCIE) END POINT SYSTEM WITH A PCIe SWITCH AND METHOD FOR INITIALIZING THE SAME
Magnetic Random Access Memory Having Perpendicular Enhancement Layer and Interfacial Anisotropic Free Layer
Storage System Employing MRAM and Redundant Array of Solid State Disk
Perpendicular Magnetic Random Access Memory (Mram) Device with Reference Cell and Method for Using Same
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Devices and Methods for Measurement of Magnetic Characteristics of Mram Wafers Using Magnetoresistive Test Strips
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Management of Memory Array with Magnetic Random Access Memory (Mram)
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
High Capaciy Low Cost Multi-State Magnetic Memory
Magnetic Random Access Memory with Perpendicular Interfacial Anisotropy
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Method for Screening Arrays of Magnetic Memories
STTMRAM ELEMENT HAVING MULTIPLE PERPENDICULAR MTJs COUPLED IN SERIES
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory Having Perpendicular Composite Reference Layer
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Fast Programming of Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory with Multilayered Seed Structure
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Voltage-Switched Magnetic Random Access Memory (Mram) and Method for Using the Same
Magnetic Random Access Memory with Nickel/Transition Metal Multilayered Seed Structure
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Perpendicular MRAM with Magnet
High Capacity Low Cost Multi-State Magnetic Memory
Magnetic Random Access Memory with Multilayered Seed Structure
System and Method of Reducing Transmission Bandwidth Required for Visibility-Event Streaming of Interactive and Non-Interactive Content
Method and Apparatus for Writing to a Magnetic Tunnel Junction (Mtj) by Applying Incrementally Increasing Voltage Level
Method and Apparatus for Increasing the Reliability of an Access Transistor Coupled to a Magnetic Tunnel Junction (MTJ)
Magnetic Random Access Memory with Tri-layer Reference Layer
Magnetic Tunnel Junction with Perpendicular Enhancement Layer and Thin Reference Layer
Memory Device with Increased Separation Between Memory Elements
Patent:
9,548,448 →
Application:
14/939,229 →
Fast Programming of Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory Element Having Tantalum Perpendicular Enhancement Layer
Method and Apparatus for Adjustment of Current Through a Magnetoresistive Tunnel Junction (Mtj) Based on Temperature Fluctuations
Magnetic Tunnel Junction (Mtj) Memory Element Having Tri-Layer Perpendicular Reference Layer
Three Dimensional Memory Arrays and Stitching Thereof
Patent:
9,627,438 →
Application:
15/141,726 →
Magnetic Random Access Memory with Perpendicular Interfacial Anisotropy
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) With Enhanced Write Current
Spin-Orbitronics Device and Applications Thereof
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Management of Memory Array with Magnetic Random Access Memory (Mram)
Omega-3 Fatty Acid Ester Compositions
Application:
15/132,278 →
Publication:
US US20160235853A1
Method of Implementing Magnetic Random Access Memory (Mram) for Mobile System-on Chip Boot
Perpendicular Magnetic Tunnel Junction (Pmtj) with in-Plane Magneto-Static Switching-Enhancing Layer
Fast Programming of Magnetic Random Access Memory (Mram)
METHOD AND APPARATUS FOR DE-DUPLICATION FOR SOLID STATE DISKs (SSDs)
Pulse Programming Techniques for Voltage-Controlled Magnetoresistive Tunnel Junction (Mtj)
Perpendicular Magnetic Memory Element Having Magnesium Oxide Cap Layer
Magnetic Memory Element with Composite Perpendicular Enhancement Layer
Programming of Magnetic Random Access Memory (MRAM) by Boosting Gate Voltage
Storage Processor Managing Solid State Disk Array
Method of Lun Management in a Solid State Disk Array
Programming of Non-Volatile Memory Subjected to High Temperature Exposure
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory (MRAM)
Multilayered Seed Structure for Perpendicular Mtj Memory Element
Memory Device Incorporating Selector Element with Multiple Thresholds
Patent:
9,812,499 →
Application:
15/221,505 →
SHARED PCIe END POINT SYSTEM INCLUDING A PCIe SWITCH AND METHOD FOR INITIALIZING THE SWITCH
Management of Memory Array with Magnetic Random Access Memory (Mram)
Magnetic Memory Element with Composite Fixed Layer
Programming of Magnetic Random Access Memory (Mram) by Boosting Gate Voltage
Magnetic Random Access Memory with Ultrathin Reference Layer
Magnetic Random Access Memory with Ultrathin Reference Layer
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Method and Apparatus for Adjustment of Current Through a Magnetoresistive Tunnel Junction (Mtj) Based on Temperature Fluctuations
Memory Device for Emulating Dynamic Random Access Memory (DRAM)
Spin-Orbitronics Device and Applications Thereof
Perpendicular Magnetic Fixed Layer with High Anisotropy
Patent:
10,008,663 →
Application:
15/491,220 →
Magnetic Memory Element with Iridium Anti-Ferromagnetic Coupling Layer
Storage System Employing Mram and Array of Solid State Disks with Integrated Switch
High Availability Storage Appliance
Magnetic Structure with Multilayered Seed
Magnetic Memory Element with Perpendicular Enhancement Layer
Magnetic Memory Element Including Oxide/Metal Composite Layers Formed Adjacent to Fixed Layer
Storage Processor Managing Nvme Logically Addressed Solid State Disk Array
Serial Link Storage Interface (SLSI) Hybrid Block Storage
Transient Sensing of Memory Cells
Method for Sensing Memory Element Coupled to Selector Device
Method for Manufacturing Magnetic Memory Cells
Method for Manufacturing Magnetic Memory Cells
Selector Device Incorporating Conductive Clusters for Memory Applications
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Magnetic Memory Element with Multilayered Seed Structure
Magnetic Random Access Memory with Ultrathin Reference Layer
Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)
Patent:
10,395,710 →
Application:
15/985,268 →
MULTILAYERED SEED STRUCTURE FOR MAGNETIC MEMORY ELEMENT INCLUDING A CoFeB SEED LAYER
Magnetic Memory Element Including Magnesium Perpendicular Enhancement Layer
Power-Efficient Programming of Magnetic Memory
Magnetic Memory Incorporating Dual Selectors
Related Assignments
(19)
Other recorded transfers of the patents in this record — the chain of ownership.
Release of Security Interest
Sep 23, 2015
From: THOMVEST SEED CAPITAL INC.
To: AVALANCHE TECHNOLOGY, INC. (FORMERLY YADAV TECHNOLOGY, INC)
Reel/Frame 036638/0594 →
Assignment of Assignor's Interest
Feb 21, 2017
From: YANG, HONGXIN; HAO, XIAOJIE; ZHANG, JING; WANG, XIAOBIN
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 041327/0643 →
Security Interest
Apr 18, 2017
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 042273/0813 →
Assignment of Assignor's Interest
May 11, 2017
From: LE, NGON VAN; TADEPALLI, RAVISHANKAR
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 042345/0606 →
Assignment of Assignor's Interest
Jan 5, 2018
From: YANG, HONGXIN; YEN, BING K.; ZHANG, JING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 044549/0308 →
Assignment of Assignor's Interest
Aug 14, 2018
From: YANG, HONGXIN; YEN, BING K
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 046827/0585 →
Assignment of Assignor's Interest
Oct 31, 2018
From: NOBUNAGA, DEAN K.; ABEDIFARD, EBRAHIM
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 047915/0352 →
Assignment of Assignor's Interest
Jan 18, 2019
From: YANG, HONGXIN; KIM, WOOJIN; HUAI, YIMING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 048097/0721 →
Assignment of Assignor's Interest
Jan 31, 2019
From: TRAN, THINH; EL BARAJI, MOURAD
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 048214/0085 →
Assignment of Assignor's Interest
Apr 12, 2019
From: NEMAZIE, SIAMACK
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 048879/0876 →
Assignment of Assignor's Interest
Apr 25, 2019
From: WANG, ZIHUI; HUAI, YIMING; GAN, HUADONG; ZHOU, YUCHEN
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 049001/0128 →
Assignment of Assignor's Interest
Jun 19, 2019
From: SATOH, KIMIHIRO
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 049529/0934 →
Assignment of Assignor's Interest
Aug 23, 2019
From: ABEDIFARD, EBRAHIM; KESHTBOD, PARVIZ; TADEPALLI, RAVISHANKAR
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 050155/0085 →
Assignment of Assignor's Interest
Oct 7, 2019
From: WANG, ZIHUI; HUAI, YIMING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 050645/0701 →
Assignment of Assignor's Interest
Dec 12, 2019
From: KESHTBOD, PARVIZ; ABEDIFARD, EBRAHIM
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 051270/0269 →
Security Interest
Jul 8, 2020
From: AVALANCHE TECHNOLOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 053156/0223 →
Security Interest
Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057213/0050 →
Security Interest
Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057217/0674 →
Security Interest
Mar 18, 2022
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 059436/0203 →