Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
View Patent ↗The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction that is opposite to the first invariable magnetization direction.
1. A spin transfer torque magnetic random access memory (STT-MRAM) device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising:
a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and
a magnetic fixed layer separated from said magnetic reference layer structure by an anti-ferromagnetic coupling layer,
wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by an intermediate magnetic reference layer, said first, second, and intermediate magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, said magnetic fixed layer has a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is opposite to said first invariable magnetization direction, said magnetic free layer structure includes one or more magnetic free layers.
2. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and tantalum.
3. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and molybdenum.
4. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and tungsten.
5. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and niobium.
6. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and hafnium.
7. The STT-MRAM device according to claim 1 , wherein said intermediate magnetic reference layer is made of a material comprising cobalt, iron, and zirconium.
8. The STT-MRAM device according to claim 1 , wherein said second magnetic reference layer is made of cobalt, or iron, or an alloy of cobalt and iron.
9. The STT-MRAM device according to claim 1 , wherein said first magnetic reference layer is made of a material comprising cobalt, iron, and boron.
10. The STT-MRAM device according to claim 1 , wherein said magnetic free layer structure includes a first magnetic free layer formed adjacent to said insulating tunnel junction layer and a second magnetic free layer separated from said first magnetic free layer by a non-magnetic perpendicular enhancement layer, said first and said second magnetic free layers having respectively a first and a second variable magnetization directions that are substantially perpendicular to layer planes thereof and are parallel to each other.
11. The STT-MRAM device according to claim 10 , wherein said non-magnetic perpendicular enhancement layer is made of magnesium oxide.
12. The STT-MRAM device according to claim 10 , wherein each of said first magnetic reference layer and said first magnetic free layer is made of a material comprising cobalt, iron, and boron.
13. The STT-MRAM device according to claim 1 , wherein said magnetic free layer structure includes a magnetic free layer formed adjacent to said insulating tunnel junction layer, said magnetic free layer having a variable magnetization direction substantially perpendicular to a layer plane thereof.
14. The STT-MRAM device according to claim 13 , wherein each of said first magnetic reference layer and said magnetic free layer is made of a material comprising cobalt, iron, and boron.
15. The STT-MRAM device according to claim 13 , wherein said magnetic free layer structure further includes a magnetic dead layer separated from said magnetic free layer by a non-magnetic perpendicular enhancement layer, said magnetic dead layer comprising at least one ferromagnetic element.
16. The STT-MRAM device according to claim 15 , wherein said magnetic dead layer is made of a material comprising cobalt, iron, and boron.
17. The STT-MRAM device according to claim 15 , wherein said non-magnetic perpendicular enhancement layer is made of magnesium oxide.
18. The STT-MRAM device according to claim 1 , wherein said magnetic fixed layer has a multilayer structure formed by interleaving layers of a first material with layers of a second material, at least one of said first and second materials being magnetic.
19. The STT-MRAM device according to claim 18 , wherein said first material is cobalt or a material comprising cobalt and iron.
20. The STT-MRAM device according to claim 18 , wherein said second material is nickel, or platinum, or palladium.