Patent Assignment
Reel/Frame 059436/0203
Security Interest
Recorded: 2022-03-18
Pages: 33
Assignor
AVALANCHE TECHNOLOGY, INC.
Executed: 2022-02-28
Assignee
STRUCTURED ALPHA LP
65 QUEEN STREET WEST, SUITE 2400, TORONTO, M5H 2M8, CANADA
Covered Properties
(293)
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (Mtj) and a Method of Manufacturing Same
Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)
Application:
16/550,103 →
Publication:
US US20190378552A1
Bidirectional Selector Device for Memory Applications
Locally Timed Sensing of Memory Device
Nonvolatile Memory Sensing Circuit Including Variable Current Source
Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers
Multilayered Seed for Perpendicular Magnetic Structure
Cross-Point MRAM Including Self-Compliance Selector
Memory Sensing Circuit and Method for Using the Same
Application:
63/073,370 →
Magnetic Memory Read Circuit and Calibration Method Therefor
Method for Manufacturing Magnetic Memory Cells
Method for Sensing Memory Element Coupled to Selector Device
Transient Sensing of Memory Cells
Serial Link Storage Interface (SLSI) Hybrid Block Storage
Storage Processor Managing Nvme Logically Addressed Solid State Disk Array
Magnetic Memory Element Including Oxide/Metal Composite Layers Formed Adjacent to Fixed Layer
Magnetic Memory Element with Perpendicular Enhancement Layer
Magnetic Structure with Multilayered Seed
High Availability Storage Appliance
Storage System Employing Mram and Array of Solid State Disks with Integrated Switch
Magnetic Memory Element with Iridium Anti-Ferromagnetic Coupling Layer
Perpendicular Magnetic Fixed Layer with High Anisotropy
Patent:
10,008,663 →
Application:
15/491,220 →
Spin-Orbitronics Device and Applications Thereof
Memory Device for Emulating Dynamic Random Access Memory (DRAM)
Method and Apparatus for Adjustment of Current Through a Magnetoresistive Tunnel Junction (Mtj) Based on Temperature Fluctuations
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Magnetic Random Access Memory with Ultrathin Reference Layer
Magnetic Random Access Memory with Ultrathin Reference Layer
Programming of Magnetic Random Access Memory (Mram) by Boosting Gate Voltage
Magnetic Memory Element with Composite Fixed Layer
Management of Memory Array with Magnetic Random Access Memory (Mram)
SHARED PCIe END POINT SYSTEM INCLUDING A PCIe SWITCH AND METHOD FOR INITIALIZING THE SWITCH
Memory Device Incorporating Selector Element with Multiple Thresholds
Patent:
9,812,499 →
Application:
15/221,505 →
Multilayered Seed Structure for Perpendicular Mtj Memory Element
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory (MRAM)
Programming of Non-Volatile Memory Subjected to High Temperature Exposure
Method of Lun Management in a Solid State Disk Array
Storage Processor Managing Solid State Disk Array
Programming of Magnetic Random Access Memory (MRAM) by Boosting Gate Voltage
Magnetic Memory Element with Composite Perpendicular Enhancement Layer
Perpendicular Magnetic Memory Element Having Magnesium Oxide Cap Layer
Pulse Programming Techniques for Voltage-Controlled Magnetoresistive Tunnel Junction (Mtj)
METHOD AND APPARATUS FOR DE-DUPLICATION FOR SOLID STATE DISKs (SSDs)
Fast Programming of Magnetic Random Access Memory (Mram)
Perpendicular Magnetic Tunnel Junction (Pmtj) with in-Plane Magneto-Static Switching-Enhancing Layer
Method of Implementing Magnetic Random Access Memory (Mram) for Mobile System-on Chip Boot
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Management of Memory Array with Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Spin-Orbitronics Device and Applications Thereof
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) With Enhanced Write Current
Magnetic Random Access Memory with Perpendicular Interfacial Anisotropy
Three Dimensional Memory Arrays and Stitching Thereof
Patent:
9,627,438 →
Application:
15/141,726 →
Magnetic Tunnel Junction (Mtj) Memory Element Having Tri-Layer Perpendicular Reference Layer
Method and Apparatus for Adjustment of Current Through a Magnetoresistive Tunnel Junction (Mtj) Based on Temperature Fluctuations
Magnetic Random Access Memory Element Having Tantalum Perpendicular Enhancement Layer
Fast Programming of Magnetic Random Access Memory (Mram)
Memory Device with Increased Separation Between Memory Elements
Patent:
9,548,448 →
Application:
14/939,229 →
Magnetic Tunnel Junction with Perpendicular Enhancement Layer and Thin Reference Layer
Magnetic Random Access Memory with Tri-layer Reference Layer
Method and Apparatus for Increasing the Reliability of an Access Transistor Coupled to a Magnetic Tunnel Junction (MTJ)
Method and Apparatus for Writing to a Magnetic Tunnel Junction (Mtj) by Applying Incrementally Increasing Voltage Level
Unipolar-Switching Perpendicular Mram and Method for Using Same
Magnetic Random Access Memory with Multilayered Seed Structure
High Capacity Low Cost Multi-State Magnetic Memory
Perpendicular MRAM with Magnet
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Magnetic Random Access Memory with Nickel/Transition Metal Multilayered Seed Structure
Voltage-Switched Magnetic Random Access Memory (Mram) and Method for Using the Same
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Magnetic Random Access Memory with Multilayered Seed Structure
Fast Programming of Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Magnetic Random Access Memory Having Perpendicular Composite Reference Layer
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory (Mram)
STTMRAM ELEMENT HAVING MULTIPLE PERPENDICULAR MTJs COUPLED IN SERIES
Method for Screening Arrays of Magnetic Memories
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Magnetic Random Access Memory with Perpendicular Interfacial Anisotropy
High Capaciy Low Cost Multi-State Magnetic Memory
Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Management of Memory Array with Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
Devices and Methods for Measurement of Magnetic Characteristics of Mram Wafers Using Magnetoresistive Test Strips
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Perpendicular Magnetic Random Access Memory (Mram) Device with Reference Cell and Method for Using Same
Storage System Employing MRAM and Redundant Array of Solid State Disk
Magnetic Random Access Memory Having Perpendicular Enhancement Layer and Interfacial Anisotropic Free Layer
A SHARED PERIPHERAL COMPONENT INTERCONNECT EXPRESS (PCIE) END POINT SYSTEM WITH A PCIe SWITCH AND METHOD FOR INITIALIZING THE SAME
Mapping of Random Defects in a Memory Device
High Capaciy Low Cost Multi-State Magnetic Memory
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram) in a Mobile Device
Memory Device Having Stitched Arrays of 4 F² Memory Celln
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
Mtj Stack and Bottom Electrode Patterning Process with Ion Beam Etching Using a Single Mask
Electric Field Assisted Mram and Method for Using the Same
Magnetic Random Access Memory with Multiple Free Layers
Patent:
9,166,143 →
Application:
14/304,775 →
Flash Subsystem Organized into Pairs of Upper and Lower Page Locations
Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Semiconductor Memory Device Having Increased Separation Between Memory Elements
Patent:
9,123,575 →
Application:
14/336,640 →
Apparatus for Initializing Perpendicular Mram Device
Three-Dimensional Flash Memory Device
Patent:
9,112,051 →
Application:
14/451,252 →
Multi-Level Cells and Method for Using the Same
Non-Volatile Storage Module Having Magnetic Random Access Memory (Mram) with a Buffer Window
Memory with on-Chip Error Correction
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Vialess Memory Structure and Method of Manufacturing Same
Hybrid Non-Volatile Memory Device
Fabrication Method for High-Density Mram Using Thin Hard Mask
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
Shields for Magnetic Memory Chip Packages
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
Method and Apparatus for Writing to a Magnetic Tunnel Junction (Mtj) by Applying Incrementally Increasing Voltage Level
Persistent Block Storage Attached to Memory Bus
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
High Capacity Low Cost Multi-State Magnetic Memory
Computer System with Physically-Addressable Solid State Disk (Ssd) and a Method of Addressing the Same
Storage System Employing Mram and Array of Solid State Disks with Integrated Switch
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device
Memory Device Having Stitched Arrays of 4 F² Memory Celly
High Density Resistive Memory Having a Vertical Dual Channel Transistor
Mtj Manufacturing Method Utilizing in-Situ Annealing and Etch Back
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Perpendicular Laminated Free Layer
Perpendicular Sttmram Device with Balanced Reference Layer
Spin-Transfer Torque Magnetic Random Access Memory with Perpendicular Magnetic Anisotropy Multilayers
Mram with Sidewall Protection and Method of Fabrication
Storage Processor Managing Solid State Disk Array
Physically Addressed Solid State Disk Employing Magnetic Random Access Memory (MRAM)
Mobile Device Using Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Perpendicular Laminated Free layer
Patent:
8,982,616 →
Application:
13/685,650 →
Magnetic Random Access Memory with Switchable Switching Assist Layer
Method for Manufacturing Non-Volatile Magnetic Memory Cell in Two Facilities
Method for Forming Mtj Memory Element
Patent:
8,975,089 →
Application:
14/082,400 →
Mram Etching Processes
Emulation of Static Random Access Memory (Sram) by Magnetic Random Access Memory (Mram)
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device
Storage Processor Managing Nvme Logically Addressed Solid State Disk Array
Patent:
8,966,164 →
Application:
14/050,274 →
Method of Manufacturing Magnetic Tunnel Junction Memory Element
Patent:
8,962,349 →
Application:
14/089,209 →
Secure Spin Torque Transfer Magnetic Random Access Memory (Sttmram)
Method of Lun Management in a Solid State Disk Array
Patent:
8,954,658 →
Application:
14/090,910 →
Storage Processor Managing Solid State Disk Array
Patent:
8,954,657 →
Application:
14/040,280 →
HOST-MANAGED Logical MASS STORAGE DEVICE USING MAGNETIC RANDOM ACCESS MEMORY (MRAM)
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
Method for Magnetic Screening of Arrays of Magnetic Memories
Method for Reducing Effective Raw Bit Error Rate in Multi-Level Cell NAND Flash Memory
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Multi-State Spin-Torque Transfer Magnetic Random Access Memory
Storage System Employing MRAM and Physically Addressed Solid State Disk
Method of Sensing Data in Magnetic Random Access Memory with Overlap of High and Low Resistance Distributions
Patent:
8,891,326 →
Application:
14/024,580 →
Magnetoresistive Layer Structure with Voltage-Induced Switching and Logic Cell Application
Magnetoresistive Logic Cell and Method of Use
Memory Device Having Vertical Selection Transistors with Shared Channel Structure and Method for Making the Same
Mapping of Random Defects in a Memory Device
Magnetoresistive Logic Cell and Method of Use
Redeposition Control in MRAM Fabrication Process
Method and Apparatus for Programming a Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) Array
Memory Device Having Stitched Arrays of 4 F² Memory Cells
Multi-Port Magnetic Random Access Memory (Mram)
High Speed Stt-Mram with Orthogonal Pinned Layer
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer
Bottom-Type Perpendicular Magnetic Tunnel Junction (Pmtj) Element with Thermally Stable Amorphous Blocking Layers
Patent:
8,836,000 →
Application:
13/891,833 →
Method and Apparatus for Sensing the State of a Magnetic Tunnel Junction (Mtj)
Initialization Method of a Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Method for Bit-Error Rate Testing of Resistance-based RAM Cells Using a Reflected Signal
Multi Root Shared Peripheral Component Interconnect Express (Pcie) End Point
Patent:
8,806,098 →
Application:
13/856,395 →
Access Transistor with a Buried Gate
Method for Manufacturing High Density Non-Volatile Magnetic Memory
Mram with Sidewall Protection and Method of Fabrication
Fast Programming of Magnetic Random Access Memory (Mram)
Patent:
8,792,269 →
Application:
13/842,747 →
Spin Transfer Torque Magnetic Random Access Memory (Sttmram) Having Graded Synthetic Free Layer
Mtj Mram with Stud Patterning
Spin Transfer Torque Magnetic Random Access Memory (Sttmram) Having Graded Synthetic Free Layer
Magnetic Memory Write Circuitry
Stt-Mram Mtj Manufacturing Method with in-Situ Annealing
Emulation of Static Random Access Memory (Sram) by Magnetic Random Access Memory (Mram)
Memory with on-Chip Error Correction
Embedded Magnetic Random Access Memory (Mram)
High Capacity Low Cost Multi-State Magnetic Memory
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
Method for Reading and Writing Multi-Level Cells
Patent:
8,724,380 →
Application:
14/079,518 →
A Magnetic Memory with a Domain Wall
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (STTMRAM) Cell
Access Transistor with a Buried Gate
Non-Volatile Storage Module Having Magnetic Random Access Memory (Mram) with a Buffer Window
Patent:
8,719,492 →
Application:
13/958,207 →
Management of Memory Array with Magnetic Random Access Memory (Mram)
Patent:
8,711,631 →
Application:
13/902,650 →
Non-Volatile Flash-Ram Memory with Magnetic Memory
MRAM with sidewall protection and method of fabrication
Memory Device Including Transistor Array with Shared Plate Channel and Method for Making the Same
Method and Apparatus for Reading a Magnetic Tunnel Junction Using a Sequence of Short Pulses
Patent:
8,693,240 →
Application:
13/688,066 →
Flash Memory With Nano-Pillar Charge Trap
Patent:
8,687,418 →
Application:
12/623,369 →
Persistent Block Storage Attached to Memory Bus
Patent:
8,677,097 →
Application:
13/654,361 →
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,670,276 →
Application:
13/945,362 →
Multi-Port Magnetic Random Access Memory (Mram)
Method for Reducing Effective Raw Bit Error Rate in Multi-Level Cell Nand Flash Memor
Patent:
8,656,255 →
Application:
13/840,327 →
Method of Sensing Data of a Magnetic Random Access Memories (Mram)
Embedded Magnetic Random Access Memory (Mram)
Method and Apparatus for Measuring Magnetic Parameters of Magnetic Thin Film Structures
Magnetic Random Access Memory (Mram) with Enhanced Magnetic Stiffness and Method of Making Same
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) Using a Synthetic Free Layer
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) Device with Shared Transistor and Minimal Written Data Disturbance
Magnetic Random Access Memory with Field Compensating Layer and Multi-Level Cell
Non-Volatile Block Storage Module Using Magnetic Random Access Memory (Mram)
Patent:
8,595,427 →
Application:
13/791,452 →
Spin-Transfer Torque Magnetic Random Access Memory Having Magnetic Tunnel Junction with Perpendicular Magnetic Anisotropy
Resistive Memory Device Having Vertical Transistors and Method for Making the Same
Mram Fabrication Method with Sidewall Cleaning
Magnetic Random Access Memory with Field Compensating Layer and Multi-Level Cell
Perpendicular Magnetic Random Access Memory (Mram) Device with a Stable Reference Cell
Method for Magnetic Screening of Arrays of Magnetic Memories
Host-Managed Logical Mass Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,547,745 →
Application:
13/679,739 →
Method of Reading from and Writing to Magnetic Random Access Memory (Mram)
Magnetic Random Access Memory (MRAM) Manufacturing Process for a Small Magnetic Tunnel Junction (MTJ) Design with a Low Programming Current Requirement
Magnetic Random Access Memory (Mram) Manufacturing Process for a Small Magnetic Tunnel Junction (Mtj) Design with a Low Programming Current Requirement
Mram Etching Processes
Method for Manufacturing Non-Volatile Magnetic Memory
Controller Management of Memory Array of Storage Device Using Magnetic Random Access Memory (Mram)
Patent:
8,526,234 →
Application:
13/708,582 →
Spin-Transfer Torque Magnetic Random Access Memory with Multi-layered Storage Layer
Low Resistance High-Tmr Magnetic Tunnel Junction and Process for Fabrication Thereof
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability
Magnetic Random Access Memory with Switching Assist Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Embedded Magnetic Random Access Memory (MRAM)
Low Cost Multi-State Magnetic Memory
Low-Cost Non-Volatile Flash-Ram Memory
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Low-Crystallization Temperature Mtj for Spin-Transfer Torque Magnetic Random Access Memory (Sttmram)
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Non-Volatile Magnetic Memory Element with Graded Layer
Non-Volatile Magnetic Memory Element with Graded Layer
Low-Cost Non-Volatile Flash-Ram Memory
High Capacity Low Cost Multi-State Magnetic Memory
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Differntial Magnetic Random Access Memory (Mram)
Patent:
8,385,108 →
Application:
13/429,293 →
Spin-Transfer Torque Magnetic Random Access Memory (Sttmram) with Laminated Free Layer
Patent:
8,374,025 →
Application:
12/779,881 →
Method and Apparatus for Programming a Magnetic Tunnel Junction (Mtj)
Magnetic Memory Sensing Circuit
Low Cost Multi-State Magnetic Memory
Magnetic Tunnel Junction (Mtj) Formation Using Multiple Etching Processes
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Method and Apparatus for Increasing the Reliability of an Access Transitor Coupled to a Magnetic Tunnel Junction (Mtj)
Embedded Magnetic Random Access Memory (Mram)
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (Sttmram) Cell
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Low-Crystallization Temperature Mtj for Spin-Transfer Torque Magnetic Random Access Memory (Sttmram)
Patent:
8,169,821 →
Application:
12/907,913 →
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Magnetic Tunnel Junction (Mtj) Formation with Two-Step Process
Patent:
8,148,174 →
Application:
13/100,048 →
Low-Cost Non-Volatile Flash-Ram Memory
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Non-Volatile Magnetic Memory Element with Graded Layer
High Capacity Low Cost Multi-State Magnetic Memory
Low Cost Multi-State Magnetic Memory
Current-Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Current-Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
Method for Manufacturing Magnetic Memory Cells
Selector Device Incorporating Conductive Clusters for Memory Applications
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Magnetic Memory Element with Multilayered Seed Structure
Magnetic Random Access Memory with Ultrathin Reference Layer
Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)
Patent:
10,395,710 →
Application:
15/985,268 →
MULTILAYERED SEED STRUCTURE FOR MAGNETIC MEMORY ELEMENT INCLUDING A CoFeB SEED LAYER
Magnetic Memory Element Including Magnesium Perpendicular Enhancement Layer
Power-Efficient Programming of Magnetic Memory
Magnetic Memory Incorporating Dual Selectors
Selector Device Having Asymmetric Conductance for Memory Applications
Magnetic Memory Cell Including Two-Terminal Selector Device
Method of Implementing Magnetic Random Access Memory (MRAM) for Mobile System-on-Chip Boot
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
Patent:
47,975 →
Application:
16/100,649 →
Multilayered Seed Structure for Magnetic Memory Element Including a CoFeB Seed Layer
Magnetic Random Access Memory with Perpendicular Enhancement Layer
Power-Efficient Programming of Magnetic Memory
Fast Programming of Magnetic Random Access Memory (MRAM)
Three-Dimensional Nonvolatile Memory
Patent:
10,818,731 →
Application:
16/446,532 →
Magnetic Memory and Method for Using the Same
Magnetic Random Access Memory with Dynamic Random Access Memory (Dram)-Like Interface
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
Method of Implementing Magnetic Random Access Memory (Mram) for Mobile System-on-Chip Boot
Multilayered Seed for Perpendicular Magnetic Structure
Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the Same
Magnetic Memory Cell Including Two-Terminal Selector Device
Magnetic Memory Read Circuit and Calibration Method Therefor
Patent:
11,211,107 →
Application:
17/031,542 →
Related Assignments
(21)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 14, 2016
From: YANG, HONGXIN; WANG, XIAOBIN; ZHANG, JING; HAO, XIAOJIE
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 040027/0704 →
Assignment of Assignor's Interest
Dec 19, 2016
From: LE, NGON VAN; IMAN, BERHANU; TADEPALLI, RAVISHANKAR
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 041032/0126 →
Security Interest
Apr 18, 2017
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 042273/0813 →
Assignment of Assignor's Interest
May 12, 2017
From: NOBUNAGA, DEAN K
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 042364/0676 →
Assignment of Assignor's Interest
Jun 9, 2017
From: YANG, HONGXIN; JUNG, DONG HA; ZHANG, JING; YEN, BING K.
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 042661/0111 →
Assignment of Assignor's Interest
Jul 27, 2017
From: HUAI, YIMING; GAN, HUADONG; WANG, ZIHUI
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 043121/0954 →
Assignment of Assignor's Interest
Aug 25, 2017
From: GAN, HUADONG; YEN, BING K.; HUAI, YIMING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 043408/0145 →
Assignment of Assignor's Interest
Oct 26, 2017
From: HUAI, YIMING; GAN, HUADONG; YEN, BING K.
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 043963/0242 →
Assignment of Assignor's Interest
Aug 23, 2019
From: ABEDIFARD, EBRAHIM; KESHTBOD, PARVIZ; TADEPALLI, RAVISHANKAR
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 050155/0085 →
Security Interest
Feb 13, 2020
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 051930/0396 →
Assignment of Assignor's Interest
Apr 1, 2020
From: WEI, ZHIQIANG
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 052279/0013 →
Assignment of Assignor's Interest
Jun 12, 2020
From: NOBUNAGA, DEAN K
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 052931/0548 →
Security Interest
Jul 8, 2020
From: AVALANCHE TECHNOLOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 053156/0223 →
Assignment of Assignor's Interest
Oct 7, 2020
From: TRAN, THINH; ABEDIFARD, EBRAHIM
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 053997/0142 →
Assignment of Assignor's Interest
Feb 14, 2021
From: WANG, ZIHUI; HUAI, YIMING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 055251/0864 →
Assignment of Assignor's Interest
Feb 14, 2021
From: HUAI, YIMING; WANG, ZIHUI
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 055251/0861 →
Assignment of Assignor's Interest
Apr 10, 2021
From: WEI, ZHIQIANG; SATOH, KIMIHIRO; KIM, WOOJIN; WANG, ZIHUI
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 055973/0403 →
Security Interest
Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057213/0050 →
Security Interest
Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057217/0674 →
Assignment of Assignor's Interest
Dec 21, 2021
From: TRAN, THINH; ABEDIFARD, EBRAHIM
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 058444/0394 →
Assignment of Assignor's Interest
Jan 15, 2022
From: WEI, ZHIQIANG; YANG, HONGXIN
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 058667/0087 →