Multi-port magnetic random access memory (MRAM)
View Patent ↗A memory array is organized into rows and columns of resistive elements and is disclosed to include a resistive element to be read or to be written thereto. Further, a first access transistor is coupled to the resistive element and to a first source line and a second access transistor is coupled to the resistive element and to a second source line, the resistive element being coupled at one end to the first and second access transistors and at an opposite end to a bit line. The memory array further has other resistive elements that are each coupled to the bit line. The resistive element is written to while one or more of the other resistive elements are being read.
1. A memory array organized into rows and columns of resistive elements, the memory array comprising:
a first pair of access transistors coupled to each other and a first and second word lines;
a first resistive element coupled to the first pair of access transistors and to a first sense line;
a second pair of access transistors coupled to each other and a third and fourth word lines;
a second resistive element coupled to the second pair of access transistors and to the first sense line;
a first pair of reference access transistors coupled to each other and the first and second word lines;
a first reference resistive element coupled to the first pair of reference access transistors and to a second sense line;
a second pair of reference access transistors coupled to each other and the third and fourth word lines;
a second reference resistive element coupled to the second pair of reference access transistors and to the first sense line,
wherein the first resistive element is written to while the second resistive element is read.
2. The memory array of claim 1 , wherein the first pair of access transistors is further coupled to a first and second bit lines.
3. The memory array of claim 2 , wherein the second pair of access transistors is further coupled to a third and fourth bit lines.
4. The memory array of claim 3 , further including a first sense amplifier coupled to the second bit line and the third bit lines.
5. The memory array of claim 4 , further including a second sense amplifier coupled to the third bit line and the fourth bit lines.
6. The memory array, as recited in claim 1 , wherein the resistive element is a magnetic random access memory (MRAM).
7. The memory array, as recited in claim 1 , wherein the resistive element is a magnetic tunnel junction (MTJ).