Programming of non-volatile memory subjected to high temperature exposure
View Patent ↗A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (MTJs) whose resistance is switchable; and a one-time-programmable (OTP) memory portion including therein a second plurality of MTJs whose resistance is switchable and a third plurality of MTJs whose resistance is fixed. Each MTJ of the first, second, and third plurality of MTJs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof. The second plurality of MTJs represents one of two logical states and the third plurality of MTJs represents the other one of the two logical states.
1. A method for using a non-volatile memory including a plurality of magnetic tunnel junctions (MTJs) for data storage, the method comprising the steps of:
shorting a portion of the plurality of MTJs by applying a breakdown voltage thereto, the portion of the plurality of MTJs having fixed resistance and representing a first logical state, the remaining portion of the plurality of MTJs having variable resistance and representing a second logical state; and
heating the plurality of MTJs to a temperature sufficiently high to cause at least one of the remaining portion of the plurality of MTJs to change the variable resistance thereof,
wherein the variable resistance of the remaining portion of the plurality of MTJs is switchable between a low resistance level and a high resistance level.
2. The method of claim 1 , wherein the temperature is between about 150° C. and about 350° C.
3. The method of claim 1 , wherein the temperature is between about 200° C. and about 300° C.
4. The method of claim 1 , wherein the non-volatile memory is spin-transfer torque magnetic random access memory (STT-MRAM).
5. The method of claim 1 , wherein each of the plurality of MTJs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof.
6. The method of claim 1 , wherein each of the plurality of MTJs is coupled to a two-terminal selector device in series.
7. The method of claim 1 , wherein the step of shorting a portion of the plurality of MTJs is carried out while the non-volatile memory is a part of a wafer before being diced.
8. The method of claim 1 further comprising the step of programming the remaining portion of the plurality of MTJs that represents the second logical state to the high resistance level after the step of heating.
9. The method of claim 8 , wherein the step of programming the remaining portion of the plurality of MTJs is carried by out by exposing the non-volatile memory to an external magnetic field.
10. The method of claim 1 further comprising the step of transferring all data stored in the plurality of MTJs after the step of heating to another plurality of MTJs in the non-volatile memory, each of the another plurality of MTJs having variable resistance that is switchable between a low resistance level and a high resistance level.
11. The method of claim 10 , wherein the another plurality of MTJs replace the plurality of MTJs in the non-volatile memory device and have the same logical addresses as the plurality of MTJs.
12. The method of claim 10 , wherein the low and high resistance levels of the another plurality of MTJs represent the first and second logical states, respectively.
13. The method of claim 10 , wherein the low and high resistance levels of the another plurality of MTJs represent the second and first logical states, respectively.