Programming of magnetic random access memory (MRAM) by boosting gate voltage

1. A method for programming a magnetic tunnel junction (MTJ) coupled to a transistor, the transistor having a gate, a source, and a drain, the method comprising the steps of:

setting a voltage of a source line to a first voltage, the source line being coupled to one of the source and drain of the transistor, the other one of the source and drain of the transistor being coupled to one end of the MTJ;

setting a voltage of a bit line to zero volt or substantially zero volt, the bit line being coupled to the other end of the MTJ;

setting a voltage of a word line coupled to the gate of the transistor to a second voltage that is higher than the first voltage; and

programming the MTJ from a first resistance state to a second resistance state by driving a current through the MTJ from the source line to the bit line.

2. The method of claim 1 , wherein the MTJ includes a magnetic fixed layer and a magnetic free layer with a tunnel junction layer interposed therebetween, each of the magnetic fixed and free layers having a magnetic orientation substantially perpendicular to a layer plane thereof.

3. The method of claim 2 , wherein the magnetic orientations of the magnetic fixed and free layers are parallel to each other in the first resistance state.

4. The method of claim 2 , wherein the magnetic orientations of the magnetic fixed and free layers are anti-parallel to each other in the first resistance state.

5. The method of claim 1 , wherein the first voltage is a power supply voltage.

6. A method for programming a magnetic tunnel junction (MTJ) coupled to a transistor, the transistor having a gate, a source, and a drain, the method comprising the steps of:

setting a voltage of a bit line to a first voltage, the bit line being coupled to one end of the MTJ, the other end of the MTJ being coupled to one of the source and drain of the transistor;

setting a voltage of a source line to a second voltage, the source line being coupled to the other one of the source and drain of the transistor;

setting a voltage of a word line coupled to the gate of the transistor to a third voltage that is higher than the first voltage; and

programming the MTJ from a first resistance state to a second resistance state by driving a current through the MTJ from the bit line to the source line.

7. The method of claim 6 , wherein the third voltage is approximately a sum of the first voltage and the second voltage.

8. The method of claim 6 , wherein the second voltage is greater than zero volt.

9. The method of claim 6 , wherein the MTJ includes a magnetic fixed layer and a magnetic free layer with a tunnel junction layer interposed therebetween, each of the magnetic fixed and free layers having a magnetic orientation substantially perpendicular to a layer plane thereof.

10. The method of claim 9 , wherein the magnetic orientations of the magnetic fixed and free layers are parallel to each other in the first resistance state.

11. The method of claim 9 , wherein the magnetic orientations of the magnetic fixed and free layers are anti-parallel to each other in the first resistance state.

12. The method of claim 6 , wherein the second voltage is less than the first voltage.

13. The method of claim 6 , wherein the first voltage is a power supply voltage.