Magnetic random access memory with ultrathin reference layer
View Patent ↗The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first fixed magnetization direction.
1. A magnetic random access memory device comprising a plurality of magnetic tunnel junction (MTJ) memory elements, each of said memory elements comprising:
a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween;
a second magnetic reference layer formed adjacent to said first magnetic reference layer opposite said insulating tunnel junction layer;
an anti-ferromagnetic coupling layer formed immediately adjacent to said second magnetic reference layer opposite said first magnetic reference layer; and
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer,
wherein said magnetic free layer has a variable magnetization direction substantially perpendicular to a layer plane thereof, said first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to layer planes thereof, said magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first fixed magnetization direction, said second magnetic reference layer is made of a metallic alloy or a metallic compound or a homogeneous mixture thereof.
2. The magnetic random access memory device according to claim 1 , wherein said second magnetic reference layer includes Co, Fe, or CoFe, and further includes one or more of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, Si, Ge, Ga, Pt, and Pd.
3. The magnetic random access memory device according to claim 1 , wherein said second magnetic reference layer comprises cobalt and platinum.
4. The magnetic random access memory device according to claim 1 , wherein said second magnetic reference layer comprises iron and platinum.
5. The magnetic random access memory device according to claim 1 , wherein said second magnetic reference layer comprises cobalt and iron.
6. The magnetic random access memory device according to claim 1 , wherein said second magnetic reference layer comprises cobalt, iron, and tantalum.
7. The magnetic random access memory device according to claim 1 , wherein said first magnetic reference layer is made of a magnetic material comprising cobalt and iron.
8. The magnetic random access memory device according to claim 1 , wherein said first magnetic reference layer is made of CoFeB or CoFeTa.
9. The magnetic random access memory device according to claim 1 , wherein said first and second magnetic reference layers are made of CoFeB and CoPt, respectively.
10. The magnetic random access memory device according to claim 1 , wherein said first and second magnetic reference layers are made of CoFeB and CoFeTa, respectively.
11. The magnetic random access memory device according to claim 1 , wherein said magnetic free layer is made of a magnetic material comprising cobalt and iron.
12. The magnetic random access memory device according to claim 1 , wherein said magnetic free layer is made of CoFeB or CoFeTa.
13. The magnetic random access memory device according to claim 1 , wherein said magnetic fixed layer has a multilayer structure formed by interleaving layers of a first type material with layers of a second type material, at least one of said first type and second type of materials being magnetic.
14. The magnetic random access memory device according to claim 13 , wherein said first type material is Co or CoFe.
15. The magnetic random access memory device according to claim 13 , wherein said second type material is Pt, Pd, Ni, or any combination thereof.
16. The magnetic random access memory device according to claim 1 , wherein each of said memory elements further comprises a seed layer formed adjacent to said magnetic fixed layer opposite said anti-ferromagnetic coupling layer.
17. The magnetic random access memory device according to claim 16 , wherein said seed layer is made of a material comprising nickel and titanium.
18. The magnetic random access memory device according to claim 16 , wherein said seed layer is made of a material comprising nickel and tantalum.
19. The magnetic random access memory device according to claim 16 , wherein said seed layer is made of a material comprising nickel and chromium.
20. The magnetic random access memory device according to claim 16 , wherein said seed layer is made of a material comprising nickel and another element selected from the group consisting of zirconium, hafnium, vanadium, niobium, molybdenum, and tungsten.