IP Library Granted Patent US 10,438,997
Granted Patent B2
US 10,438,997 · App. 16/287,987 · Granted Oct 8, 2019

Multilayered seed structure for magnetic memory element including a CoFeB seed layer

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Quick Facts
Patent No.
US 10,438,997
App. No.
16/287,987
Granted
Oct 8, 2019
Kind
B2
Abstract

The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.

Claims (28)

1. A magnetic structure comprising:

a seed layer structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and

a magnetic fixed layer structure formed on top of said first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane of said magnetic fixed layer structure, said magnetic fixed layer structure including layers of a first magnetic material interleaved with layers of a second transition metal.

2. The magnetic structure of claim 1 , wherein said second transition metal is nickel.

3. The magnetic structure of claim 1 , wherein said second transition metal is iridium.

4. The magnetic structure of claim 1 , wherein said second transition metal is platinum.

5. The magnetic structure of claim 1 , wherein said second transition metal is palladium.

6. The magnetic structure of claim 1 , wherein said first transition metal is chromium.

7. The magnetic structure of claim 1 , wherein said first transition metal is iridium.

8. The magnetic structure of claim 1 , wherein said second seed layer comprises cobalt, iron, and boron and has a noncrystalline structure.

9. The magnetic structure of claim 1 , wherein said second seed layer comprises cobalt, iron, and boron and is non-magnetic or superparamagnetic.

10. The magnetic structure of claim 1 , wherein said first magnetic material is cobalt.

11. The magnetic structure of claim 1 , wherein said first magnetic material comprises cobalt and iron.

12. The magnetic structure of claim 1 , wherein said first magnetic material and said second transition metal are cobalt and nickel, respectively.

13. The magnetic structure of claim 1 , wherein said first magnetic material and said second transition metal are cobalt and iridium, respectively.

14. The magnetic structure of claim 1 , wherein said first magnetic material and said second transition metal are cobalt and platinum, respectively.

15. The magnetic structure of claim 1 further comprising a third seed layer formed adjacent to said second seed layer opposite said first seed layer, said third seed layer being made of tantalum or ruthenium.

16. The magnetic structure of claim 1 further comprising:

an anti-ferromagnetic coupling layer formed adjacent to said magnetic fixed layer structure opposite said seed layer structure; and

a magnetic reference layer structure formed adjacent to said anti-ferromagnetic coupling layer, said magnetic reference layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction,

wherein said magnetic reference layer structure includes a first magnetic reference layer and a second magnetic reference layer with a first non-magnetic perpendicular enhancement layer interposed therebetween, said second magnetic reference layer formed adjacent to said anti-ferromagnetic coupling layer opposite said magnetic fixed layer structure.

17. The magnetic structure of claim 16 , wherein said second magnetic reference layer includes one or more layers of a second magnetic material interleaved with one or more layers of a third transition metal.

18. The magnetic structure of claim 17 , wherein said second magnetic material and said third transition metal are cobalt and platinum, respectively.

19. The magnetic structure of claim 16 , wherein said anti-ferromagnetic coupling layer is made of iridium.

20. The magnetic structure of claim 16 further comprising:

an insulating tunnel junction layer formed adjacent to said first magnetic reference layer; and

a magnetic free layer structure formed adjacent to said insulating tunnel junction layer and including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof.

21. The magnetic structure of claim 20 , wherein said magnetic free layer structure includes a first magnetic free layer and a second magnetic free layer with a second non-magnetic perpendicular enhancement layer interposed therebetween.

Assignments (6)
SECURITY INTEREST Recorded Mar 18, 2022
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 059436/0203 →
SECURITY INTEREST Recorded Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057213/0050 →
SECURITY INTEREST Recorded Apr 19, 2021
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 057217/0674 →
SECURITY INTEREST Recorded Jul 8, 2020
From: AVALANCHE TECHNOLOGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 053156/0223 →
SECURITY INTEREST Recorded Feb 13, 2020
From: AVALANCHE TECHNOLOGY, INC.
To: STRUCTURED ALPHA LP
Reel/Frame 051930/0396 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2019
From: WANG, ZIHUI; HUAI, YIMING
To: AVALANCHE TECHNOLOGY, INC.
Reel/Frame 048466/0838 →