Initialization method of a perpendicular magnetic random access memory (MRAM) device
View Patent ↗Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.
1. A method for initializing perpendicular magnetization directions of magnetic layers in a set of MRAM elements with each element having at least one free layer and at least first and second fixed layers, the method comprising the steps of:
applying a first externally generated magnetic field to the set of MRAM elements, the first externally generated magnetic field having a first field direction and having a first field magnitude sufficient to switch magnetization directions of the fixed layers of each element into a first perpendicular magnetization direction; and
applying a second externally generated magnetic field to the set of MRAM elements, the second externally generated magnetic field having a second field direction opposite to the first magnetic field and having a second field magnitude sufficient to switch the magnetization direction of the first fixed layer into a second perpendicular magnetization direction while leaving the second fixed layer in the first perpendicular magnetization direction.
2. The method of claim 1 , wherein the first fixed layer and the second fixed layer have different coercivities.
3. The method of claim 1 , wherein the first fixed layer has a lower coercivity than the second fixed layer.
4. The method of claim 1 , wherein the second field magnitude is weaker than the first field magnitude.
5. The method of claim 1 , wherein the first perpendicular magnetization direction and the second perpendicular magnetization direction are substantially opposite to each other.
6. The method of claim 1 , wherein the step of applying the first externally generated magnetic field occurs when the set of MRAM elements has been heated to an elevated temperature.
7. The method of claim 1 , wherein the step of applying the first externally generated magnetic field further comprises heating the set of MRAM elements to an elevated temperature to lower the coercivities of the first and second fixed layers.
8. The method of claim 1 , wherein the step of applying the second externally generated magnetic field to the set of MRAM elements occurs when the set of MRAM elements has been heated to an elevated temperature.
9. The method of claim 1 , wherein the step of applying the second externally generated magnetic field further comprises heating the set of MRAM elements to an elevated temperature to lower the coercivity of the first fixed layer.
10. The method of claim 1 , wherein the first fixed layer is a reference layer and the second fixed layer is a pinned layer.
11. The method of claim 1 , wherein the first fixed layer is a pinned layer and the second fixed layer is a reference layer.
12. The method of claim 1 , wherein the first fixed layer and the second fixed layer are disposed on opposite sides of the free layer.
13. The method of claim 1 , wherein the first fixed layer and the second fixed layer are separated by a spacer layer.
14. The method of claim 13 , wherein the spacer layer is an anti-ferromagnetic coupling layer.
15. The method of claim 13 , wherein the spacer layer is made of ruthenium, copper, or magnesium oxide.
16. The method of claim 1 , further comprising the step of applying a third externally generated magnetic field to the set of MRAM elements, the third externally generated magnetic field having the first magnetization direction and a third field magnitude sufficient to switch magnetization direction of the free layer while leaving the magnetization directions of the first and second fixed layers unchanged.
17. The method of claim 16 , wherein the third field magnitude is weaker than the second field magnitude.
18. The method of claim 16 , wherein the free layer has a lower coercivity than the first and second fixed layers.
19. A method for initializing perpendicular magnetization directions of magnetic layers in a set of MRAM elements with each element having at least one free layer and at least first and second fixed layers, magnetization directions of the first and second fixed layers initially oriented in a first perpendicular magnetization direction, the method comprising the step of applying an externally generated magnetic field to the set of MRAM elements, the externally generated magnetic field having a field direction opposite to the first perpendicular magnetization direction and having a field magnitude sufficient to switch the magnetization direction of the first fixed layer into a second perpendicular magnetization direction while leaving the second fixed layer in the first perpendicular magnetization direction.
20. The method of claim 19 , wherein the first fixed layer has a lower coercivity than the second fixed layer.
21. The method of claim 19 , wherein the first perpendicular magnetization direction and the second perpendicular magnetization direction are substantially opposite to each other.
22. The method of claim 19 , wherein the step of applying the externally generated magnetic field occurs when the set of MRAM elements has been heated to an elevated temperature.