Flash memory with nano-pillar charge trap
View Patent ↗An embodiment of the present invention includes a non-volatile storage unit comprising a first and second N-diffusion well separated by a distance of P-substrate. A first isolation layer is formed upon the first and second N-diffusion wells and the P-substrate. A nano-pillar charge trap layer is formed upon the first isolation layer and includes conductive nano-pillars interspersed between non-conducting regions. The storage unit further includes a second isolation layer formed upon the nano-pillar charge trap layer; and at least one word line formed upon the second isolation layer and above a region of nano-pillar charge trap layer. The nano-pillar charge trap layer is operative to trap charge upon application of a threshold voltage. Subsequently, the charge trap layer may be read to determine any charge stored in the non-volatile storage unit, where presence or absence of stored charge in the charge trap layer corresponds to a bit value.
1. A method of storing digital information in a storage unit comprising:
operating a storage unit having:
a first N-diffusion well and a second N-diffusion well, the first and second N-diffusion wells separated by a P-substrate;
a first isolation layer formed upon the first and second N-diffusion wells and the P-substrate;
a graded nano-pillar charge trap layer including a nano-pillar charge trap layer formed upon the first isolation layer comprising conductive nano-pillars interspersed between non-conducting regions, the conductive nano pillars being cylindrical or spherical in shape being made of material comprising: Cobalt (Co), Iron (Fe), and Nickel (Ni);
a second isolation layer formed upon the nano-pillar charge trap layer; and
at least one word line formed upon the second isolation layer;
wherein the nano-pillar charge trap layer is adapted to:
operate in a first mode having associated therewith a first potential, upon application of a threshold current through the at least one word line, and to
operate in a second mode, wherein charge is stored on the nano-pillars of the nano-pillar charge trap layer, and having associated therewith a second potential;
wherein during the first mode, a first bit value is stored in the storage unit, and during the second mode, a second bit value is stored in the storage unit.
2. The method of storing digital information, as recited in claim 1 , wherein each of the conductive nano-pillars is separated from another conductive nano-pillar by a distance of the non-conducting region.
3. The method of storing digital information, as recited in claim 1 , further including a trench formed in the P-substrate, between the first and second N-diffusion wells.
4. The method of storing digital information, as recited in claim 1 , further including an oxide layer formed in the P-substrate, between the first and second N-diffusion wells.
5. The method of storing digital information, as recited in claim 1 , wherein the nano-pillar charge trap layer is positioned centrally between the first N-diffusion well and the second N-diffusion well such that the nano-pillar charge trap layer is vertically offset from the first and second N-diffusion wells.
6. The method of storing digital information, as recited in claim 1 , wherein when voltage is applied during programming, to the storage unit, charges are trapped in the conductive nano-pillars and wherein during reading of the storage unit, the charge trapped in nano-pillars modulate to allow the storage unit to store either the first or the second bit value.
7. The method of storing digital information, as recited in claim 1 , wherein the non-conducting regions are made of material comprising: oxides, nitrides, sulfides, or phosphides.
8. The method of storing digital information, as recited in claim 1 , wherein the non-conducting regions are made of material comprising: oxide selected from one or more of the materials: silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ), tantalum penatoxide (Ta 2 O 5 ), aluminum oxide (Al 2 O 3 ), zirconium oxide (ZrO 2 ), or hafnium oxide (HfO 2 ).
9. The method of storing digital information, as recited in claim 1 , wherein the non-conducting regions are made of ferro-magnetic materials comprising: SiO 2 , TiO 2 , Ta 2 O 5 , Nb 2 O 5 , ZrO 2 , HfO 2 , TiN, TaN, or Cr 2 O 3 .
10. The method of storing digital information, as recited in claim 1 , wherein the conductive nano-pillars are made of material comprising: Chromium, Tantalum, Niobium, Titanium, Tungsten, Molybdenum, Rubidium, Platinum, or Palladium.
11. The method of storing digital information, as recited in claim 1 , wherein the nano-pillar charge trap layer is made of Cobalt-X, where ‘X’ is an element comprising: chrome, tantalum, titanium or other metallic elements, such as copper or silver.
12. The method of storing digital information, as recited in claim 1 , wherein the nano-pillar charge trap layer is made of Co—X-titanium dioxide (TiO 2 ), where ‘X’ is an element comprising: chrome, tantalum, titanium or other metallic elements, such as copper or silver.
13. A storage unit comprising:
a first N-diffusion well and a second N-diffusion well, the first and second N-diffusion wells separated by a P-substrate;
a first isolation layer formed upon the first and second N-diffusion wells and the P-substrate;
a graded nano-pillar charge trap layer including a nano-pillar charge trap layer formed upon the first isolation layer comprising conductive nano-pillars interspersed between non-conducting regions, the conductive nano-pillars being cylindrical or spherical in shape and made of material comprising: Cobalt (Co), Iron (Fe), and Nickel (Ni);
a second isolation layer formed upon the nano-pillar charge trap layer; and
at least one word line formed upon the second isolation layer;
wherein the nano-pillar charge trap layer is adapted to:
operate in a first mode having associated therewith a first potential, upon application of a threshold current through the at least one word line, and to
operate in a second mode, wherein charge is stored on the nano-pillars of the nano-pillar charge trap layer, and having associated therewith a second potential;
wherein during the first mode, a first bit value is stored in the storage unit, and during the second mode, a second bit value is stored in the storage unit.
14. The storage unit, as recited in claim 13 , wherein each of the conductive nano-pillars is separated from another conductive nano-pillar by a distance of the non-conducting region.
15. The storage unit, as recited in claim 13 , further including a trench formed in the P-substrate, between the first and second N-diffusion wells.
16. The storage unit, as recited in claim 13 , further including an oxide layer formed in the P-substrate, between the first and second N-diffusion wells.
17. The storage unit, as recited in claim 13 , wherein the nano-pillar charge trap layer is positioned centrally between the first N-diffusion well and the second N-diffusion well such that the nano-pillar charge trap layer is vertically offset from the first and second N-diffusion wells.
18. The storage unit, as recited in claim 13 , wherein when voltage is applied during programming, to the storage unit, charges are trapped in the conductive nano-pillars and wherein during reading of the storage unit, the charge trapped in nano-pillars modulate to allow the storage unit to store either the first or the second bit value.
19. The storage unit, as recited in claim 13 , wherein the non-conducting regions are made of material comprising: oxides, nitrides, sulfides, or phosphides.
20. The storage unit, as recited in claim 13 , wherein the non-conducting regions further include at least one of the following materials: Chromium (Cr), Tantalum (Ta), Titanium (Ti), Niobium (Nb), or Molybdenum (Mo).
21. The method of storing digital information, as recited in claim 1 , wherein the non-conducting regions further include at least one of the following materials: Chromium (Cr), Tantalum (Ta), Titanium (Ti), Niobium (Nb), or Molybdenum (Mo).