Patent Assignment
Reel/Frame 024258/0835
Change of Name
Recorded: 2010-04-20
Received: 2010-04-20
Pages: 21
Assignor
YADAV TECHNOLOGY, INC.
Executed: 2009-12-18
Assignee
AVALANCHE TECHNOLOGY, INC.
48371 FREMONT BLVD., SUITE 101, FREMONT, CA, 94538, UNITED STATES
Covered Properties
(20)
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (Sttmram) Cell
Application:
12/756,081 →
Spin-Transfer Torque Magnetic Random Access Memory Having Magnetic Tunnel Junction with Perpendicular Magnetic Anisotropy
Application:
12/641,244 →
Flash Memory With Nano-Pillar Charge Trap
Application:
12/623,369 →
Low-crystallization temperature MTJ for Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM)
Application:
61/253,463 →
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Laminated Free Layer
Application:
61/178,918 →
Embedded Magnetic Random Access Memory (MRAM)
Application:
61/177,641 →
Multi-State Spin-Torque Transfer Magnetic Random Access Memory
Application:
12/397,255 →
Low Current Switching Magnetic Tunnel Junction Design for Magnetic Memory Using Domain Wall Motion
Application:
12/255,624 →
Low-Cost Non-Volatile Flash-Ram Memory
Application:
12/182,996 →
Magnetic Memory Sensing Circuit
Application:
12/125,866 →
Method for Manufacturing Non-Volatile Magnetic Memory
Application:
12/040,827 →
Low Resistance High-Tmr Magnetic Tunnel Junction and Process for Fabrication Thereof
Application:
12/040,801 →
Current-Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
Application:
11/932,940 →
High Capacity Low Cost Multi-State Magnetic Memory
Application:
11/866,830 →
Low Cost Multi-State Magnetic Memory
Application:
11/860,467 →
Non-Volatile Magnetic Memory Element with Graded Layer
Application:
11/776,692 →
High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
Application:
11/740,861 →
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
Application:
11/739,648 →
High Capacity Low Cost Multi-State Magnetic Memory
Application:
11/678,515 →
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Application:
11/674,124 →