Magnetic random access memory with dynamic random access memory (DRAM)-like interface
A non-volatile memory device configured to emulate DRAM interface comprising a memory array that includes a plurality of magnetic memory cells organized into rows and columns with at least one row of the magnetic memory cells comprising one or more pages that store data during a burst write operation; a control circuit operable to initiate the burst write operation that writes the data to the memory array while spanning multiple clock cycles; an encoder operable to encode the data to be written to the memory array; and a decoder coupled to the memory array and operable to check and correct the data previously encoded by the encoder and saved in the memory array.
1. A non-volatile memory device configured to emulate dynamic random access memory (DRAM) comprising:
a memory array including a plurality of memory cells organized into rows and columns, at least one row of memory cells comprising one or more pages that store data during a burst write operation;
a control circuit operable to initiate said burst write operation that writes said data to said memory array, said burst write operation spanning multiple clock cycles;
a codeword (CW) encoder operable to encode said data to be written to said memory array;
a CW decoder coupled to said memory array and operable to check and correct errors in said data previously encoded by said CW encoder and saved in said memory array;
a data latch coupled to said CW decoder, said data latch configured to latch decoded data from said CW decoder in response to an array read operation and configured to output latched data to said CW encoder in said burst write operation; and
a write buffer configured to receive said data from said CW encoder and provide said data for writing to said memory array.
2. The non-volatile memory device of claim 1 , wherein while said burst write operation accessing a first location within a page of data is in progress, said memory device is operable to receive a burst read command initiating reading from a second location within said page of data, said memory device being operable to continue executing said burst write operation and to provide data associated with said burst read operation from said data latch.
3. The non-volatile memory device of claim 1 , wherein a write operation takes longer than a read operation.
4. The non-volatile memory device of claim 1 , wherein said memory device is compliant with at least one version of double data rate (DDR) SDRAM Specification.
5. The non-volatile memory device of claim 1 , wherein said memory device is compliant with at least one version of low power double data rate (LPDDR) Specification.
6. The non-volatile memory device of claim 1 , wherein a version of double data rate (DDR) scheme is employed during burst write and burst read operations.
7. The non-volatile memory device of claim 6 , wherein a double data rate 3 (DDR3) scheme is employed during burst write and burst read operations.
8. The non-volatile memory device of claim 1 , wherein a version of low power double data rate (LPDDR) scheme is employed during burst write and burst read operations.
9. The non-volatile memory device of claim 8 , wherein a low power double data rate 2 (LPDDR2) scheme is employed during burst write and burst read operations.
10. A non-volatile memory device configured to emulate dynamic random access memory (DRAM) comprising:
a memory array including a plurality of magnetic memory cells organized into rows and columns, at least one row of magnetic memory cells comprising one or more pages that store data during a burst write operation;
a control circuit operable to initiate said burst write operation that writes said data to said memory array, said burst write operation spanning multiple clock cycles;
a codeword (CW) encoder operable to encode said data to be written to said memory array;
a CW decoder coupled to said memory array and operable to check and correct errors in said data previously encoded by said CW encoder and saved in said memory array;
a data latch coupled to said CW decoder, said data latch configured to latch decoded data from said CW decoder in response to an array read operation and configured to output latched data to said CW encoder in said burst write operation; and
a write buffer configured to receive said data from said CW encoder and provide said data for writing to said memory array,
wherein said non-volatile memory device is magnetic random access memory (MRAM).
11. The non-volatile memory device of claim 10 , wherein while said burst write operation accessing a first location within a page of data is in progress, said memory device is operable to receive a burst read command initiating reading from a second location within said page of data, said memory device being operable to continue executing said burst write operation and to provide data associated with said burst read operation from said data latch.
12. The non-volatile memory device of claim 10 , wherein a write operation takes longer than a read operation.
13. The non-volatile memory device of claim 10 , wherein said memory device is compliant with at least one version of double data rate (DDR) SDRAM Specification.
14. The non-volatile memory device of claim 10 , wherein said memory device is compliant with at least one version of low power double data rate (LPDDR) Specification.
15. A non-volatile memory device configured to emulate dynamic random access memory (DRAM) comprising:
a memory array including a plurality of magnetic memory cells organized into rows and columns, at least one row of magnetic memory cells comprising one or more pages that store data during a burst write operation;
a control circuit operable to initiate said burst write operation that writes said data to said memory array, said burst write operation spanning multiple clock cycles;
a codeword (CW) encoder operable to encode said data to be written to said memory array;
a CW decoder coupled to said memory array and operable to check and correct errors in said data previously encoded by said CW encoder and saved in said memory array;
a data latch coupled to said CW decoder, said data latch configured to latch decoded data from said CW decoder in response to an array read operation and configured to output latched data to said CW encoder in said burst write operation; and
a write buffer configured to receive said data from said CW encoder and provide said data for writing to said memory array,
wherein said non-volatile memory device is spin transfer torque magnetic random access memory (STT-MRAM).
16. The non-volatile memory device of claim 15 , wherein while said burst write operation accessing a first location within a page of data is in progress, said memory device is operable to receive a burst read command initiating reading from a second location within said page of data, said memory device being operable to continue executing said burst write operation and to provide data associated with said burst read operation from said data latch.
17. The non-volatile memory device of claim 15 , wherein a write operation takes longer than a read operation.