High capaciy low cost multi-state magnetic memory
View Patent ↗One embodiment of the present invention includes a multi-state current-switching magnetic memory element that includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer. The stack is for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
1. A multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state comprising:
a first magnetic tunnel junction (MTJ) formed on top of a bottom electrode;
a second MTJ, formed on top of the first MTJ and separated from the first MTJ by an amorphous isolation layer; and
a top electrode formed on top of the second MTJ, each of the first and second MTJs having a free layer with a switchable magnetic orientation, a barrier layer and a fixed layer, the first and second MTJs collectively operable to store more than one bit of information,
wherein each of the first and second MTJs store one bit of information, each of the free layers of the first and second MTJs having a different composition based on an amount of oxide therein, and each of the free layers of the first and second MTJs being responsive to a unique switching current based on the composition of each free layer,
wherein the free layer switches its magnetic orientation based upon a level of a switching current applied thereto, further wherein application of different levels of current to the multi-state current-switching magnetic memory element causes switching to different states.
2. The multi-state current-switching magnetic memory element, as recited in claim 1 , further including a first pinning layer formed between the bottom electrode and the first MTJ.
3. The multi-state current-switching magnetic memory element, as recited in claim 2 , further including a second pinning layer formed between a seeding layer and the second MTJ, the seeding layer formed between the second pinning layer and the amorphous isolation layer.
4. The multi-state current-switching magnetic memory element, as recited in claim 3 , wherein each of the first and second MTJs includes a fixed layer and a barrier layer, the barrier layer of each of the first and second MTJs separating a corresponding free layer from a corresponding fixed layer of each of the first and second MTJs.
5. The multi-state current-switching magnetic memory element, as recited in claim 4 , further including a second seeding layer formed between the bottom electrode and the first pinning layer.
6. The multi-state current-switching magnetic memory element, as recited in claim 4 , wherein the barrier layer of each of the first and second MTJs is made substantially of magnesium oxide (MgO).
7. The multi-state current-switching magnetic memory element, as recited in claim 6 , wherein the barrier layer of each of the first and second MTJs includes one or more of the following compounds: aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgOx), ruthenium oxide (RuO), strontium oxide (SrO), zinc oxide (ZnO).
8. A multi-state current-switching magnetic memory element, as recited in claim 4 , wherein the barrier layer of each of the first and second MTJs has a unique thickness, thereby causing each MTJ to have a unique resistance.
9. A multi-state current-switching magnetic memory element, as recited in claim 4 , wherein the fixed layer of each of the first and second MTJs is made substantially of magnetic material.
10. The multi-state current-switching magnetic memory element, as recited in claim 7 , wherein the free layer of each of the first and second MTJs is unique in composition, causing each MTJ to have a unique switching current.
11. The multi-state current-switching magnetic memory element, as recited in claim 1 , wherein each of the first and second MTJs has a distinct size.