Magnetic memory and method for using the same
The present invention is directed to a memory circuitry that includes a magnetic memory element and a selector coupled in series between a first conductive line and a second conductive line; a current detector coupled to the second conductive line; and a means for supplying a sufficiently high voltage to the first conductive line for turning on the selector. When the selector turns on, the current detector detects a current flowing across the selector and effectuates a current limiter to reduce the current while maintaining the selector on. The memory circuitry may be operated by applying a sufficiently high voltage to the first conductive line for turning on the selector; reducing a current flowing through the selector while maintaining the sufficiently high voltage on the first conductive line; and determining a resistance state of the magnetic memory element.
1. A memory circuit including:
a magnetic memory element and a selector coupled in series between a first conductive line and a second conductive line;
a current detector coupled to the second conductive line; and
a means for supplying a sufficiently high voltage to the first conductive line for turning on the selector,
wherein when the selector turns on, the current detector detects a current flowing across the selector and effectuates a current limiter to reduce the current to prevent switching of the magnetic memory element while the selector remains on.
2. The memory circuit of claim 1 , wherein the current detector includes a current mirror.
3. The memory circuit of claim 1 , wherein the current detector includes a latch.
4. The memory circuit of claim 1 , wherein the current limiter is coupled to the first conductive line.
5. The memory circuit of claim 1 , wherein the current limiter is a current source.
6. The memory circuit of claim 1 , wherein the magnetic memory element includes a magnetic reference layer and a magnetic free layer with an insulating tunnel junction layer interposed therebetween.
7. A method for operating a magnetic memory element and a selector coupled in series between a first conductive line and a second conductive line, the method comprising the steps of:
applying a sufficiently high voltage to the first conductive line for turning on the selector without switching the magnetic memory element;
reducing a current flowing through the selector to further prevent switching of the magnetic memory element while maintaining the selector on; and
determining a resistance state of the magnetic memory element after reducing the current,
wherein the selector is a volatile threshold-switching device.
8. The method of claim 7 , wherein the magnetic memory element includes a magnetic reference layer and a magnetic free layer with an insulating tunnel junction layer interposed therebetween.
9. The method of claim 7 , wherein the step of determining the resistance state of the magnetic memory element is carried out by measuring a voltage of the second conductive line.
10. The method of claim 7 , wherein the step of reducing the current flowing through the selector is accomplished by a current limiter.
11. The method of claim 10 , wherein the current limiter is a current source.
12. The method of claim 7 further comprising the step of switching the resistance state of the magnetic memory element by maintaining the sufficiently high voltage on the first conductive line without limiting the current after determining the resistance state of the magnetic memory element.
13. The method of claim 12 further comprising the steps of reducing the current flowing through the selector and determining the resistance state of the magnetic memory element after switching the resistance state of the magnetic memory element.
14. The memory circuit of claim 1 , wherein the selector is a volatile threshold-switching device.