Three-dimensional nonvolatile memory

1. A memory array including one or more memory layers, each memory layer comprising:

a first plurality of memory cells and a second plurality of memory cells arranged in alternated odd and even columns, respectively;

a first plurality of odd horizontal lines with each connected to a respective odd column of the first plurality of memory cells at a first end of the respective odd column of the first plurality of memory cells;

a second plurality of even horizontal lines with each connected to a respective even column of the second plurality of memory cells at a first end of the respective even column of the second plurality of memory cells;

a plurality of transverse lines with each connected to one of the first plurality of memory cells and a respective one of the second plurality of memory cells disposed adjacent to the one of the first plurality of memory cells at a second end of the first and second plurality of memory cells along a row direction; and

a plurality of vertical lines with each connected to a respective one of the plurality of transverse lines,

wherein the first plurality of odd horizontal lines collectively form fingers of a first comb structure and the second plurality of even horizontal lines collectively form fingers of a second comb structure.

2. The memory array of claim 1 , wherein the second end of the first and second plurality of memory cells corresponds to a bottom end.

3. The memory array of claim 1 , wherein the second end of the first and second plurality of memory cells corresponds to a top end.

4. The memory array of claim 1 , wherein each memory cell of the first and second plurality of memory cells includes a resistance-switching memory element and a two-terminal selector coupled in series.

5. The memory array of claim 4 , wherein the resistance-switching memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed between the magnetic free and reference layers.

6. The memory array of claim 4 , wherein the resistance-switching memory element includes a magnetic tunnel junction (MTJ).

7. The memory array of claim 4 , wherein the resistance-switching memory element includes a phase-change material.

8. The memory array of claim 4 , wherein the two-terminal selector is a bidirectional threshold switch.

9. The memory array of claim 4 , wherein the two-terminal selector includes two electrodes and a volatile switching layer interposed between the two electrodes.

10. The memory array of claim 1 , wherein each of the first and second comb structures is connected to a control circuitry below the first and second comb structures.

11. The memory array of claim 1 , wherein each of the plurality of vertical lines passes in between one of the first plurality of memory cells and a respective one of the second plurality of memory cells that are connected to a respective one of the plurality of transverse lines.

12. The memory array of claim 1 further comprising:

a third plurality of memory cells and a fourth plurality of memory cells arranged in alternated odd and even columns, respectively;

a third plurality of odd horizontal lines with each connected to a respective odd column of the third plurality of memory cells at a second end of the respective odd column of the third plurality of memory cells;

a fourth plurality of even horizontal lines with each connected to a respective even column of the fourth plurality of memory cells at a second end of the respective even column of the fourth plurality of memory cells,

wherein each of the plurality of the transverse lines is connected to one of the third plurality of memory cells and a respective one of the fourth plurality of memory cells disposed adjacent to the one of the third plurality of memory cells at a first end of the third and fourth plurality of memory cells along the row direction.

13. The memory array of claim 12 , wherein the second end of the first, second, third, and fourth plurality of memory cells corresponds to a bottom end.

14. The memory array of claim 12 , wherein each memory cell of the first and second plurality of memory cells includes a resistance-switching memory element and a two-terminal selector coupled in series.

15. The memory array of claim 14 , wherein the resistance-switching memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed between the magnetic free and reference layers.

16. The memory array of claim 14 , wherein the resistance-switching memory element includes a magnetic tunnel junction (MTJ).

17. The memory array of claim 14 , wherein the resistance-switching memory element includes a phase-change material.

18. The memory array of claim 14 , wherein the two-terminal selector is a bidirectional threshold switch.

19. The memory array of claim 14 , wherein the two-terminal selector includes two electrodes and a volatile switching layer interposed between the two electrodes.

20. The memory array of claim 12 , wherein each of the plurality of vertical lines passes in between one of the first plurality of memory cells and a respective one of the second plurality of memory cells that are connected to a respective one of the plurality of transverse lines.