Methods for forming vias in polymer layers

1. A method for forming a via in a substrate, comprising:

depositing a layer of uncured polymer material atop a substrate to cover a conductive layer which is exposed on the substrate;

exposing at least one area of the layer of uncured polymer material using a photolithography process;

developing the layer of uncured polymer material in the photolithography process to remove a first portion of uncured polymer material from the at least one area;

etching the layer of uncured polymer material with a dry etch process to remove a second portion of uncured polymer material from the at least one area to expose a top surface of the conductive layer and form a via in the layer of uncured polymer material; and

curing the layer of uncured polymer material to form a cured polymer material layer.

2. The method of claim 1 , further comprising:

using a plasma based dry etch process to etch the layer of uncured polymer material.

3. The method of claim 2 , further comprising:

etching the layer of uncured polymer material with an oxygen based gas.

4. The method of claim 2 , further comprising:

etching the layer of uncured polymer material with a carbon tetrafluoride based gas.

5. The method of claim 2 , further comprising:

adjusting a bias power to enhance a perpendicular etching aspect of the plasma based dry etch process relative to a top surface of the substrate.

6. The method of claim 2 , further comprising:

adjusting a gas flow to enhance a perpendicular etching aspect of the plasma based dry etch process relative to a top surface of the substrate.

7. The method of claim 2 , further comprising:

blanket etching the substrate with the plasma based dry etching process such that the second portion of uncured polymer material is etched at a higher etch rate than an upper surface of the substrate.

8. The method of claim 1 , further comprising:

forming the via in the layer of uncured polymer material with a size of less than approximately 10 microns.

9. The method of claim 8 , further comprising:

forming the via in the layer of uncured polymer material with a size of less than approximately five microns.

10. The method claim 1 , further comprising:

using an optical mask to expose the at least one area of the layer of uncured polymer material on the substrate in the photolithography process.

11. The method of claim 1 , further comprising:

forming the via with a sidewall profile angle of approximately 80 degrees to approximately 90 degrees.

12. The method of claim 1 , wherein the conductive layer is a copper-based material, an aluminum-based material, a gold-based material, a silver-based material.

13. A method for forming a via in a substrate, comprising:

spin coating a layer of uncured polymer material atop a substrate to cover at least one conductive layer that is exposed on the substrate;

exposing at least one area of the layer of uncured polymer material above the at least one conductive layer with an ultraviolet light;

removing a first portion of uncured polymer material from the at least one area exposed by the ultraviolet light with a solvent wash;

etching the layer of uncured polymer material with an anisotropic dry etch process to remove a second portion of uncured polymer material from the at least one area to expose a top surface of the conductive layer and form a via of less than or equal to approximately 10 microns in the layer of uncured polymer material; and

curing the layer of uncured polymer material to form a cured polymer material layer.

14. The method of claim 13 , further comprising:

using a plasma based dry etch process to etch the layer of uncured polymer material.

15. The method of claim 14 , further comprising:

etching the layer of uncured polymer material with an oxygen based gas or a carbon tetrafluoride based gas.

16. The method of claim 14 , further comprising:

adjusting a bias power to enhance a perpendicular etching aspect of the plasma based dry etch process relative to a top surface of the substrate.

17. The method of claim 14 , further comprising:

adjusting a gas flow to enhance a perpendicular etching aspect of the plasma based dry etch process relative to a top surface of the substrate.

18. The method of claim 13 , further comprising:

curing the layer of uncured polymer material at a temperature of approximately 180° C. to approximately 350° C. to form the cured polymer material layer.

19. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of operating a wafer level processing system to be performed, the method comprising:

spin coating a layer of uncured polymer material atop a substrate to cover at least one conductive layer that is exposed on the substrate;

exposing at least one area of the layer of uncured polymer material above the at least one conductive layer with an ultraviolet light;

removing a first portion of uncured polymer material from the at least one area exposed by the ultraviolet light with a solvent wash;

etching the layer of uncured polymer material with an anisotropic dry etch process to remove a second portion of uncured polymer material from the at least one area to expose a top surface of the conductive layer and form a via of less than or equal to approximately 10 microns in the layer of uncured polymer material; and

curing the layer of uncured polymer material to form a cured polymer material layer.

20. The non-transitory computer readable medium of claim 19 , wherein the via has a width or diameter of less than or equal to approximately five microns.