SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

1 . A semiconductor device comprising:

a first semiconductor substrate;

a first insulating film provided on a first face of the first semiconductor substrate and having a first groove formed thereon;

a first metal layer covering an inner surface of the first groove;

a first electrode part provided on the first metal layer and embedded in the first groove;

a second semiconductor substrate having a second face facing the first face of the first semiconductor substrate;

a second insulating film provided on the second face of the second semiconductor substrate, attached to the first insulating film, and having a second groove formed thereon; and

a second electrode part embedded in the second groove and connected to the first electrode part, wherein

an end part of the first metal layer is recessed toward the first semiconductor substrate relative to a surface of the first insulating film.

2 . The device of claim 1 , wherein

the end part of the first metal layer is recessed toward the first semiconductor substrate relative to a surface of the first electrode part, and

a material of the first or second electrode part is provided between the end part of the first metal layer and the second insulating film or the second electrode part.

3 . The device of claim 1 , further comprising a second metal layer provided between the second insulating film and the second electrode part, wherein

an end part of the second metal layer is recessed toward the second semiconductor substrate relative to a surface of the second insulating film.

4 . The device of claim 3 , wherein

the end part of the second metal layer is recessed toward the second semiconductor substrate relative to a surface of the second electrode part, and

a material of the first or second electrode part is provided between the end part of the second metal layer and the first insulating film, the first electrode part, or the first metal layer.

5 . The device of claim 1 , further comprising

a second metal layer provided between the second insulating film and the second electrode part, wherein

an end part of the second metal layer is recessed toward the second semiconductor substrate relative to a surface of the second insulating film,

a material of the first or second electrode part is provided between the end part of the first metal layer and the second insulating film or the second electrode part, and

a material of the first or second electrode part is provided between the end part of the second metal layer and the first insulating film, the first electrode part, or the first metal layer.

6 . The device of claim 1 , wherein

a silicon dioxide film is used as the first and second insulating films,

copper is used as the first and second electrode parts, and

titanium is used as the first metal layer.

7 . The device of claim 5 , wherein

a silicon dioxide film is used as the first and second insulating films,

copper is used as the first and second electrode parts, and

titanium is used as the first and second metal layers.

8 . A manufacturing method of a semiconductor device, the method comprising:

forming a first insulating film on a first face of a first semiconductor substrate;

forming a first groove on the first insulating film;

forming a first metal layer on an inner surface of the first groove;

filling a material of a first electrode part in the first groove;

polishing the first metal layer and the first electrode part until the first insulating film is exposed;

selectively etching the first metal layer to recess an end part of the first metal layer toward the first semiconductor substrate relative to a surface of the first insulating film;

forming a second insulating film on a second face of a second semiconductor substrate;

forming a second groove on the second insulating film;

filling a material of a second electrode part in the second groove;

polishing the second electrode part until the second insulating film is exposed; and

attaching the first semiconductor substrate and the second semiconductor substrate to each other in such a manner that the first insulating film and the second insulating film face each other, thereby connecting the first electrode part and the second electrode part to each other.

9 . The method of claim 8 , comprising thermally treating the first and second semiconductor substrates after attaching the first and second semiconductor substrates to each other.

10 . The method of claim 8 , wherein the end part of the first metal layer is recessed toward the first semiconductor substrate relative to a surface of the first electrode part due to etching of the first metal layer.

11 . The method of claim 8 , wherein the material of the first or second electrode part is introduced between the first metal layer and the second insulating film or the second electrode part due to a thermal treatment of the first and second semiconductor substrates.

12 . The method of claim 8 , further comprising:

after forming the second groove and before filling the material of the second electrode part,

forming a second metal layer on an inner surface of the second groove;

after filing the material of the second electrode part,

polishing the second metal layer and the second electrode part until the second insulating film is exposed; and

selectively etching the second metal layer to recess an end part of the second metal layer toward the second semiconductor substrate relative to a surface of the second insulating film.

13 . The method of claim 12 , wherein the end part of the second metal layer is recessed toward the second semiconductor substrate relative to a surface of the second electrode part due to etching of the second metal layer.

14 . The method of claim 12 , wherein the material of the first or second electrode part is introduced between the second metal layer and the first insulating film, the first electrode part, or the first metal layer due to a thermal treatment of the first and second semiconductor substrates.

15 . The method of claim 13 , wherein the material of the first or second electrode part is introduced between the second metal layer and the first insulating film, the first electrode part, or the first metal layer due to a thermal treatment of the first and second semiconductor substrates.

16 . The method of claim 12 , comprising

polishing the first metal layer and the first electrode part until the first insulating film is exposed, the first metal layer protruding relative to the first insulating film and the first electrode part after polishing ends, and

polishing the second metal layer and the second electrode part until the second insulating film is exposed, the second metal layer protruding relative to the second insulating film and the second electrode part after polishing ends.

17 . The method of claim 13 , comprising

polishing the first metal layer and the first electrode part until the first insulating film is exposed, the first metal layer protruding relative to the first insulating film and the first electrode part after polishing ends, and

polishing the second metal layer and the second electrode part until the second insulating film is exposed, the second metal layer protruding relative to the second insulating film and the second electrode part after polishing ends.

18 . The method of claim 16 , comprising

filling a material of the first electrode part containing copper in the first groove by electrolytic plating,

filling a material of the second electrode part containing copper in the second groove by electrolytic plating,

selectively etching the first metal layer with a hydrogen peroxide solution, and

selectively etching the second metal layer with a hydrogen peroxide solution.

19 . A manufacturing method of a semiconductor device, the method comprising:

forming a first insulating film on a first face of a first semiconductor substrate;

forming a first groove on the first insulating film;

forming a first metal layer on an inner surface of the first groove;

filling a material of a first electrode part containing copper in the first groove by electrolytic plating;

polishing the first metal layer and the first electrode part until the first insulating film is exposed, the first metal layer protruding relative to the first insulating film and the first electrode part after polishing ends;

selectively etching the first metal layer with a hydrogen peroxide solution to recess an end part of the first metal layer toward the first semiconductor substrate relative to a surface of the first insulating film;

forming a second insulating film on a second face of a second semiconductor substrate;

forming a second groove on the second insulating film;

forming a second metal layer on an inner surface of the second groove;

filling a material of a second electrode part containing copper in the second groove by electrolytic plating;

polishing the second metal layer and the second electrode part until the second insulating film is exposed, the second metal layer protruding relative to the second insulating film and the second electrode part after polishing ends;

selectively etching the second metal layer with a hydrogen peroxide solution to recess an end part of the second metal layer toward the second semiconductor substrate relative to a surface of the second insulating film;

attaching the first semiconductor substrate and the second semiconductor substrate to each other in such a manner that the first insulating film and the second insulating film face each other;

thermally treating the first and second semiconductor substrates; and

connecting the first electrode part and the second electrode part to each other.

20 . The method of claim 19 , wherein

due to a thermal treatment of the first and second semiconductor substrates,

a material of the first or second electrode part is introduced between the first metal layer and the second insulating film or the second electrode part, and

a material of the first or second electrode part is introduced between the second metal layer and the first insulating film, the first electrode part, or the first metal layer.