Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region and a second semiconductor region, a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and a blocking element arranged on the bottom surface, wherein the at least one recess has a first width and a second width parallel to the main extension plane of the semiconductor body, and the first width is smaller than the second width.
1. An optoelectronic semiconductor chip comprising:
a semiconductor body comprising a first semiconductor region and a second semiconductor region,
an active region formed to generate electromagnetic radiation,
a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and
a blocking element arranged on the bottom surface, wherein
the active region is arranged between the first semiconductor region and the second semiconductor region,
the recess has a plurality of first widths and a plurality of second widths parallel to a main extension plane of the semiconductor body,
the first widths of the recess and the second widths of the recess are arranged alternating along at least one line, and
the first width is smaller than the second width.
2. The optoelectronic semiconductor chip according to claim 1 , wherein the blocking element is arranged on the bottom surface where the recess has the second width.
3. The optoelectronic semiconductor chip according to claim 1 , wherein a Bragg mirror layer is arranged on the first semiconductor region in places.
4. The optoelectronic semiconductor chip according to claim 3 , wherein the Bragg mirror layer has a first width and a second width parallel to the main extension plane, and the first width is smaller than the second width.
5. The optoelectronic semiconductor chip according to claim 3 , wherein a side surface and a top surface of the Bragg mirror layer and a top surface of the first semiconductor region are completely covered by a current spreading layer.
6. The optoelectronic semiconductor chip according to claim 5 , wherein a further blocking element is arranged on the current spreading layer in places.
7. The optoelectronic semiconductor chip according to claim 6 , wherein the further blocking element is arranged over a region of a Bragg mirror layer with the second width.
8. The optoelectronic semiconductor chip according to claim 1 , further comprising a plurality of second widths arranged at grid points of a regular grid.
9. The optoelectronic semiconductor chip according to claim 2 , wherein the second width corresponds to the width of the blocking element.
10. The optoelectronic semiconductor chip according to claim 2 , further comprising a metallic connecting contact, wherein the blocking element is arranged below the metallic connecting contact.
11. The optoelectronic semiconductor chip according to claim 10 , wherein the metallic connecting contact has a smaller width than the blocking element.
12. A method of producing a plurality of optoelectronic semiconductor chips according to claim 1 , comprising:
providing a semiconductor wafer comprising a plurality of the semiconductor bodies,
applying a first structured sacrificial layer on the semiconductor wafer by a first mask, wherein
the first mask has a plurality of contiguous first blinds, and the first blinds each have a first width and a second width in the main extension plane,
producing a plurality of the recesses in the semiconductor wafer below the first blinds,
applying a further structured sacrificial layer by a further first mask, wherein the further first mask shows a plurality of further first blinds,
applying a plurality of the blocking elements below the further first blinds, and
producing a plurality of the optoelectronic semiconductor chips by separation.
13. The method according to claim 12 , wherein, prior to application of the structured sacrificial layer, a second structured sacrificial layer is applied to the semiconductor wafer by a second mask.
14. The method according to claim 12 ,
wherein
the second mask has a plurality of contiguous second blinds,
the second blinds have a first width and a second width in the main extension plane, and
a Bragg mirror layer is applied below the further second blinds.
15. An optoelectronic semiconductor chip comprising:
a semiconductor body comprising a first semiconductor region and a second semiconductor region,
a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and
a blocking element arranged on the bottom surface, wherein
a Bragg mirror layer is arranged on the first semiconductor region in places,
a side surface and a top surface of the Bragg mirror layer and a top surface of the first semiconductor region are completely covered by a current spreading layer,
the recess has a first width and a second width parallel to the main extension plane of the semiconductor body, and
the first width is smaller than the second width.
16. An optoelectronic semiconductor chip comprising:
a semiconductor body comprising a first semiconductor region and a second semiconductor region,
a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and
a blocking element arranged on the bottom surface, wherein
the recess has a first width and a second width parallel to the main extension plane of the semiconductor body,
the second width corresponds to the width of the blocking element, and
the first width is smaller than the second width.