Backside metal formation methods and systems
Implementations of methods of forming a metal layer on a semiconductor wafer may include: placing a semiconductor wafer into an evaporator dome and adding a material to a crucible located a predetermined distance from the semiconductor wafer. The semiconductor wafer may include an average thickness of less than 39 microns. The method may also include heating the material in the crucible to a vapor and depositing the material on a second side of the semiconductor wafer.
1. A method of forming a metal layer on a semiconductor wafer, the method comprising:
placing a semiconductor wafer into an evaporator dome, the semiconductor wafer comprising an average thickness of less than 39 microns;
adding a material to a crucible located a predetermined distance from the semiconductor wafer;
heating the material in the crucible to a vapor; and
depositing the material on a second side of the semiconductor wafer.
2. The method of claim 1 , wherein heating comprises one of resistive heating or electron beam heating.
3. The method of claim 1 , wherein the semiconductor wafer comprises a plurality of die on a first side of the semiconductor wafer.
4. The method of claim 1 , wherein the semiconductor wafer comprises an edge support ring around a perimeter of the semiconductor wafer.
5. The method of claim 1 , wherein a first side of the semiconductor wafer is coupled to a backgrinding tape.
6. The method of claim 1 , wherein a first side of the semiconductor wafer is not coupled to a backgrinding tape.
7. The method of claim 1 , wherein the material in the crucible is a metal comprising one of titanium, gold, copper, tin, tungsten, aluminum, silver, nickel, chromium, or any combination thereof.
8. The method of claim 1 , the method further comprising etching the semiconductor wafer, wherein etching comprises wet chemical etching.
9. The method of claim 1 , wherein the semiconductor wafer is not coupled to a carrier.
10. A method of forming a metal layer on a semiconductor wafer, the method comprising:
placing a semiconductor wafer into an evaporator dome, the semiconductor wafer comprising a first side and a second side;
adding a material to a crucible located a predetermined distance from the semiconductor wafer; and
coupling the material with the second side of the semiconductor wafer through heating;
wherein heating comprises one of resistive heating or electron beam heating; and
wherein the semiconductor wafer comprises an average thickness of less than 10 microns.
11. The method of claim 10 , wherein the semiconductor wafer comprises an edge ring around a perimeter of the semiconductor wafer.
12. The method of claim 10 , wherein the first side of the semiconductor wafer is coupled to a backgrinding tape.
13. The method of claim 10 , wherein the material in the crucible is a metal comprising one of titanium, gold, copper, tin, tungsten, aluminum, silver, nickel, chromium, or any combination thereof.
14. The method of claim 10 , the method further comprising etching the semiconductor wafer, wherein etching comprises wet chemical etching.
15. The method of claim 10 , wherein the semiconductor wafer is not coupled to a carrier.
16. A method of forming a metal layer on a semiconductor wafer, the method comprising:
placing a semiconductor wafer into an evaporator dome, the semiconductor wafer comprising an average thickness between 5 microns and 39 microns;
coupling a material with a second side of the semiconductor wafer through heating;
wherein heating comprises one of resistive heating or electron beam heating; and
wherein the semiconductor wafer comprises an edge ring around a perimeter of the semiconductor wafer.
17. The method of claim 16 , wherein the average thickness of the semiconductor wafer is 25 microns.
18. The method of claim 16 , wherein a first side of the semiconductor wafer is coupled to a backgrinding tape.
19. The method of claim 16 , the method further comprising etching the semiconductor wafer, wherein etching comprises wet chemical etching.